Inventor · disambiguated record
Glyn Braithwaite
Also filed as: BRAITHWAITE GLYN
16 granted patents·9 pending applications·689 citations·filing 2002–2015
95Inventor score
Files withAMBERWAVE SYSTEMS CORP12TAIWAN SEMICONDUCTOR MFG7BRAITHWAITE GLYN2GLOBAL FOUNDRIES INC1JAVORKA PETER1
Top patents by PatentIndex Score
25 records- 0199US7109516B2Strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 19, 2006·100 cites·15 claims
- 0299US7074623B2Methods of forming strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 11, 2006·226 cites·6 claims
- 0398US8629477B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 14, 2014·35 cites·20 claims
- 0498US8324660B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationLOCHTEFELD ANTHONY J·Filed 2010·Granted Dec 4, 2012·85 cites·24 claims
- 0598US7709828B2RF circuits including transistors having strained material layersTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 4, 2010·138 cites·19 claims
- 0696US8796734B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·16 cites·20 claims
- 0796US8519436B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 27, 2013·17 cites·20 claims
- 0893US9431243B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·5 cites·21 claims
- 0987US9219112B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 22, 2015·3 cites·21 claims
- 1085US8987028B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 24, 2015·3 cites·20 claims
- 1184US6680496B1Back-biasing to populate strained layer quantum wellsAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Jan 20, 2004·29 cites·26 claims
- 1283US8809835B2RF circuits including transistors having strained material layersBRAITHWAITE GLYN·Filed 2012·Granted Aug 19, 2014·5 cites·19 claims
- 1382US6933518B2RF circuits including transistors having strained material layersAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Aug 23, 2005·20 cites·9 claims
- 1478US8704229B2Partial poly amorphization for channeling preventionJAVORKA PETER·Filed 2011·Granted Apr 22, 2014·3 cites·17 claims
- 1572US7906776B2RF circuits including transistors having strained material layersTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Mar 15, 2011·2 cites·20 claims
- 1671US8247798B2RF circuits including transistors having strained material layersBRAITHWAITE GLYN·Filed 2011·Granted Aug 21, 2012·2 cites·20 claims
- 1754US2006197124A1Double gate strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 1854US2006186510A1Strained-semiconductor-on-insulator bipolar device structuresAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 1954US2006197123A1Methods for forming strained-semiconductor-on-insulator bipolar device structuresAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 2054US2006197125A1Methods for forming double gate strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 2154US2006197126A1Methods for forming structures including strained-semiconductor-on-insulator devicesAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 2253US2014167110A1Partial poly amorphization for channeling preventionGLOBAL FOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2343US2007267722A1Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 2442US2006292719A1Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationAMBERWAVE SYSTEMS CORP·Filed 2006·Application pending·0 cites
- 2538US2004084668A1Back-biasing to populate strained layer quantum wellsAMBERWAVE SYSTEMS CORP·Filed 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →