Assignee
AMBERWAVE SYSTEMS CORP
US·82 granted patents·25 pending applications·5,039 citations·filing 2001–2011
Top patents by PatentIndex Score
107 records- 0199US7420201B2Strained-semiconductor-on-insulator device structures with elevated source/drain regionsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 2, 2008·80 cites·25 claims
- 0299US7109516B2Strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 19, 2006·100 cites·15 claims
- 0399US7074623B2Methods of forming strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 11, 2006·226 cites·6 claims
- 0499US6995430B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Feb 7, 2006·485 cites·14 claims
- 0599US6960781B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Nov 1, 2005·223 cites·40 claims
- 0699US6831292B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Dec 14, 2004·361 cites·62 claims
- 0799US6555839B2Buried channel strained silicon FET using a supply layer created through ion implantationAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Apr 29, 2003·259 cites·14 claims
- 0898US7638842B2Lattice-mismatched semiconductor structures on insulatorsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 29, 2009·81 cites·41 claims
- 0998US7626246B2Solutions for integrated circuit integration of alternative active area materialsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Dec 1, 2009·121 cites·14 claims
- 1098US7335545B2Control of strain in device layers by prevention of relaxationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Feb 26, 2008·118 cites·31 claims
- 1198US7307273B2Control of strain in device layers by selective relaxationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 11, 2007·86 cites·17 claims
- 1298US7122449B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Oct 17, 2006·66 cites·63 claims
- 1398US6593191B2Buried channel strained silicon FET using a supply layer created through ion implantationAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·134 cites·43 claims
- 1497US7504704B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Mar 17, 2009·54 cites·22 claims
- 1597US7217603B2Methods of forming reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted May 15, 2007·41 cites·42 claims
- 1697US7049627B2Semiconductor heterostructures and related methodsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 23, 2006·102 cites·21 claims
- 1797US6900094B2Method of selective removal of SiGe alloysAMBERWAVE SYSTEMS CORP·Filed 2002·Granted May 31, 2005·130 cites·13 claims
- 1897US6703688B1Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Mar 9, 2004·131 cites·19 claims
- 1997US6680495B2Silicon wafer with embedded optoelectronic material for monolithic OEICAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 20, 2004·81 cites·57 claims
- 2097US6677655B2Silicon wafer with embedded optoelectronic material for monolithic OEICAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 13, 2004·111 cites·58 claims
- 2197US6583015B2Gate technology for strained surface channel and strained buried channel MOSFET devicesAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jun 24, 2003·152 cites·25 claims
- 2296US6703144B2Heterointegration of materials using deposition and bondingAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Mar 9, 2004·98 cites·9 claims
- 2396US6677192B1Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 13, 2004·113 cites·34 claims
- 2495US7588994B2Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strainAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 15, 2009·17 cites·24 claims
- 2595US7259388B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 21, 2007·18 cites·18 claims
- 2695US6946371B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Sep 20, 2005·70 cites·35 claims
- 2795US6881632B2Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETSAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Apr 19, 2005·116 cites·16 claims
- 2895US6602613B1Heterointegration of materials using deposition and bondingAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Aug 5, 2003·82 cites·69 claims
- 2995US6593641B1Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·96 cites·16 claims
- 3095US6503773B2Low threading dislocation density relaxed mismatched epilayers without high temperature growthAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 7, 2003·71 cites·24 claims
- 3194US7393733B2Methods of forming hybrid fin field-effect transistor structuresAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Jul 1, 2008·58 cites·9 claims
- 3294US7297612B2Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Nov 20, 2007·16 cites·16 claims
- 3394US6649480B2Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 18, 2003·91 cites·23 claims
- 3494US6646322B2Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 11, 2003·92 cites·19 claims
- 3594US6645829B2Silicon wafer with embedded optoelectronic material for monolithic OEICAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 11, 2003·67 cites·27 claims
- 3693US7566606B2Methods of fabricating semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Jul 28, 2009·19 cites·16 claims
- 3793US7138310B2Semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Nov 21, 2006·60 cites·13 claims
- 3892US7432139B2Methods for forming dielectrics and metal electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Oct 7, 2008·18 cites·29 claims
- 3992US7256142B2Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Aug 14, 2007·53 cites·34 claims
- 4092US6991972B2Gate material for semiconductor device fabricationAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jan 31, 2006·49 cites·50 claims
- 4192US6724008B2Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Apr 20, 2004·82 cites·34 claims
- 4292US6723661B2Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Apr 20, 2004·83 cites·20 claims
- 4391US6518644B2Low threading dislocation density relaxed mismatched epilayers without high temperature growthAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Feb 11, 2003·39 cites·30 claims
- 4490US6982474B2Reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Jan 3, 2006·28 cites·15 claims
- 4588US7071014B2Methods for preserving strained semiconductor substrate layers during CMOS processingAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 4, 2006·27 cites·44 claims
- 4688US6969875B2Buried channel strained silicon FET using a supply layer created through ion implantationAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 29, 2005·33 cites·29 claims
- 4788US6750130B1Heterointegration of materials using deposition and bondingAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jun 15, 2004·48 cites·39 claims
- 4886US6594293B1Relaxed InxGa1-xAs layers integrated with SiAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·36 cites·36 claims
- 4985US7439164B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Oct 21, 2008·7 cites·23 claims
- 5085US7060632B2Methods for fabricating strained layers on semiconductor substratesAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jun 13, 2006·27 cites·54 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
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