Strained-semiconductor-on-insulator bipolar device structures

Abstract

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

1 - 34 . (canceled)  
   
   
       35 . A structure comprising: 
 a strained semiconductor layer disposed over a dielectric layer; and    a bipolar transistor including: 
 a collector disposed in a portion of the strained semiconductor layer,  
 a base disposed in contact with the collector and over the strained semiconductor layer, and  
 an emitter disposed over the base.  
   
   
   
       36 . The structure of  claim 35 , wherein the strained layer is tensilely strained.  
   
   
       37 . The structure of  claim 36 , wherein the strained layer comprises tensilely strained silicon.  
   
   
       38 . The structure of  claim 35 , wherein the strained layer is compressively strained.  
   
   
       39 - 62 . (canceled)  
   
   
       63 . The structure of  claim 35 , wherein the strained semiconductor layer is in contact with the dielectric layer.  
   
   
       64 . The structure of  claim 35 , wherein the base comprises a substantially relaxed semiconductor material.  
   
   
       65 . The structure of  claim 64 , wherein the substantially relaxed semiconductor material comprises at least one of silicon and germanium.  
   
   
       66 . The structure of  claim 35 , wherein the base comprises a compressively strained semiconductor material.  
   
   
       67 . The structure of  claim 66 , wherein the compressively strained semiconductor comprises at least one of silicon and germanium.  
   
   
       68 . The structure of  claim 35 , wherein the base comprises a tensilely strained semiconductor material.  
   
   
       69 . The structure of  claim 68 , wherein the tensilely strained semiconductor material comprises at least one of silicon and germanium.  
   
   
       70 . The structure of  claim 35 , wherein the base is doped.  
   
   
       71 . The structure of  claim 70 , wherein the doped base comprises dopants and an element, and the element suppresses outdiffusion of the dopants from the base.  
   
   
       72 . The structure of  claim 35 , wherein the base comprises SiGe, and a concentration of Ge in the SiGe has a non-uniform profile across a thickness of the base.  
   
   
       73 . The structure of  claim 72 , wherein the profile is selected from the group consisting of graded, trapezoidal, and triangular.  
   
   
       74 . The structure of  claim 35 , wherein the emitter comprises a substantially relaxed semiconductor.  
   
   
       75 . The structure of  claim 74 , wherein the substantially relaxed semiconductor comprises at least one of silicon and germanium.  
   
   
       76 . The structure of  claim 35 , wherein the emitter comprises a tensilely strained semiconductor material.  
   
   
       77 . The structure of  claim 76 , wherein the tensilely strained semiconductor material comprises at least one of silicon and germanium.