Inventor · disambiguated record
Toshiharu Nagumo
Also filed as: NAGUMO TOSHIHARU
14 granted patents·7 pending applications·39 citations·filing 2011–2019
90Inventor score
Files withRENESAS ELECTRONICS CORP11GLOBALFOUNDRIES INC4IBM2TOSHIBA MEMORY CORP2MATSUDAIRA MASAHARU1
Top patents by PatentIndex Score
21 records- 0191US9564486B2Self-aligned dual-height isolation for bulk FinFETIBM·Filed 2015·Granted Feb 7, 2017·7 cites·13 claims
- 0287US9929177B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Mar 27, 2018·6 cites·18 claims
- 0385US8963259B2Device isolation in finFET CMOSGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 24, 2015·5 cites·3 claims
- 0479US9324790B2Self-aligned dual-height isolation for bulk FinFETIBM·Filed 2013·Granted Apr 26, 2016·4 cites·12 claims
- 0579US9305846B2Device isolation in FinFET CMOSGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 5, 2016·2 cites·14 claims
- 0677US9190505B2Field effect transistor with channel core modified for a backgate bias and method of fabricationRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 17, 2015·3 cites·7 claims
- 0775US9231105B2Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistorRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 5, 2016·3 cites·9 claims
- 0872US9589951B2High-electron-mobility transistor with protective diodeRENESAS ELECTRONICS CORP·Filed 2015·Granted Mar 7, 2017·2 cites·10 claims
- 0971US9362308B2Semiconductor device having finFET structures and method of making sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 7, 2016·3 cites·8 claims
- 1068US9196715B2Field effect transistor with channel core modified to reduce leakage current and method of fabricationRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 24, 2015·2 cites·9 claims
- 1165US10069010B2Semiconductor device having compressively strained channel region and method of making sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Sep 4, 2018·1 cites·20 claims
- 1264US9190411B2Retrograde doped layer for device isolationGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 17, 2015·1 cites·20 claims
- 1352US2018301552A1Semiconductor device having compressively strained channel region and method of making sameRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1448US2016079426A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1548US2016035728A1Retrograde doped layer for device isolationGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 1646US2016020312A1Field effect transistor with channel core modified to reduce leakage current and method of fabricationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1744US2016027872A1Field effect transistor with channel core modified for a backgate bias and method of fabricationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1843US10896913B2Semiconductor memory device including memory pillars and transistor and manufacturing method thereofTOSHIBA MEMORY CORP·Filed 2019·Granted Jan 19, 2021·0 cites·10 claims
- 1941US9553131B2Semiconductor device and forming methodRENESAS ELECTRONICS CORP·Filed 2015·Granted Jan 24, 2017·0 cites·7 claims
- 2039US2012065920A1Evaluation method, evaluation apparatus, and simulation method of semiconductor deviceNAGUMO TOSHIHARU·Filed 2011·Application pending·0 cites
- 2136US2012313172A1Semiconductor device, semiconductor wafer, and methods of manufacturing the sameMATSUDAIRA MASAHARU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →