Assignee
GLOBALFOUNDRIES INC
US·4,127 granted patents·537 pending applications·28,921 citations·filing 1999–2020
Top patents by PatentIndex Score
4,664 records- 0199US10665669B1Insulative structure with diffusion break integral with isolation layer and methods to form sameGLOBALFOUNDRIES INC·Filed 2019·Granted May 26, 2020·39 cites·20 claims
- 0299US10510620B1Work function metal patterning for N-P space between active nanostructuresGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·126 cites·6 claims
- 0399US10388732B1Nanosheet field-effect transistors including a two-dimensional semiconducting materialGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·88 cites·20 claims
- 0499US10332803B1Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of formingGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 25, 2019·83 cites·20 claims
- 0599US10332963B1Uniformity tuning of variable-height features formed in trenchesGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 25, 2019·346 cites·19 claims
- 0699US10256158B1Insulated epitaxial structures in nanosheet complementary field effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 9, 2019·68 cites·20 claims
- 0799US10192819B1Integrated circuit structure incorporating stacked field effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 29, 2019·76 cites·20 claims
- 0899US10170484B1Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·61 cites·20 claims
- 0999US10090193B1Integrated circuit structure incorporating a stacked pair of field effect transistors and a buried interconnect and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·68 cites·20 claims
- 1099US10026824B1Air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·53 cites·17 claims
- 1199US10014390B1Inner spacer formation for nanosheet field-effect transistors with tall suspensionsGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·74 cites·16 claims
- 1299US9991352B1Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·90 cites·20 claims
- 1399US9947804B1Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 17, 2018·154 cites·14 claims
- 1499US9853006B2Semiconductor device contact structure having stacked nickel, copper, and tin layersGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 26, 2017·47 cites·17 claims
- 1599US9847390B1Self-aligned wrap-around contacts for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 19, 2017·74 cites·20 claims
- 1699US9831346B1FinFETs with air-gap spacers and methods for forming the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 28, 2017·33 cites·11 claims
- 1799US9780208B1Method and structure of forming self-aligned RMG gate for VFETGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 3, 2017·60 cites·19 claims
- 1899US9748145B1Semiconductor devices with varying threshold voltage and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·494 cites·17 claims
- 1999US9653583B1Methods of forming diffusion breaks on integrated circuit products comprised of finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 16, 2017·79 cites·25 claims
- 2099US9640636B1Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 2, 2017·88 cites·24 claims
- 2199US9613861B2Damascene wires with top via structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 4, 2017·60 cites·17 claims
- 2299US9536793B1Self-aligned gate-first VFETs using a gate spacer recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·74 cites·13 claims
- 2399US9508604B1Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacersGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·51 cites·25 claims
- 2499US9412616B1Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 9, 2016·148 cites·22 claims
- 2599US9397003B1Method for forming source/drain contacts during CMOS integration using confined epitaxial growth techniquesGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·79 cites·20 claims
- 2699US9369488B2Policy enforcement using natural language processingGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 14, 2016·306 cites·20 claims
- 2799US9362181B1Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·69 cites·31 claims
- 2899US9245885B1Methods of forming lateral and vertical FinFET devices and the resulting productGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 26, 2016·60 cites·17 claims
- 2999US9111907B2Silicide protection during contact metallization and resulting semiconductor structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 18, 2015·174 cites·14 claims
- 3099US9064932B1Methods of forming gate structures by a gate-cut-last process and the resulting structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 23, 2015·109 cites·24 claims
- 3199US8703557B1Methods of removing dummy fin structures when forming finFET devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 22, 2014·63 cites·23 claims
- 3298US10910503B1Semiconductor detectors with butt-end coupled waveguide and method of forming the sameGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·18 cites·20 claims
- 3398US10840146B1Structures and SRAM bit cells with a buried cross-couple interconnectGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 17, 2020·62 cites·20 claims
- 3498US10529826B1Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 7, 2020·22 cites·20 claims
- 3598US10509244B1Optical switches and routers operated by phase-changing materials controlled by heatersGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·23 cites·20 claims
- 3698US10510622B1Vertically stacked complementary-FET device with independent gate controlGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·46 cites·20 claims
- 3798US10461186B1Methods of forming vertical field effect transistors with self-aligned contacts and the resulting structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·28 cites·20 claims
- 3898US10429582B1Waveguide-to-waveguide couplers with multiple tapersGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·59 cites·19 claims
- 3998US10388770B1Gate and source/drain contact structures positioned above an active region of a transistor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·36 cites·18 claims
- 4098US10374040B1Method to form low resistance contactGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·48 cites·18 claims
- 4198US10340290B2Stacked SOI semiconductor devices with back bias mechanismGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 2, 2019·32 cites·20 claims
- 4298US10297664B2Nanosheet transistor with uniform effective gate lengthGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·32 cites·18 claims
- 4398US10276442B1Wrap-around contacts formed with multiple silicide layersGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 30, 2019·29 cites·20 claims
- 4498US10243053B1Gate contact structure positioned above an active region of a transistor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 26, 2019·33 cites·20 claims
- 4598US10236213B1Gate cut structure with liner spacer and related methodGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·25 cites·9 claims
- 4698US10236292B1Complementary FETs with wrap around contacts and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·33 cites·9 claims
- 4798US10215695B1Inspection system and method for detecting defects at a materials interfaceGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·15 cites·20 claims
- 4898US10192779B1Bulk substrates with a self-aligned buried polycrystalline layerGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·71 cites·12 claims
- 4998US10192867B1Complementary FETs with wrap around contacts and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·134 cites·6 claims
- 5098US10176995B1Methods, apparatus and system for gate cut process using a stress material in a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·29 cites·20 claims
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