Inventor · disambiguated record
Wei-Zhe Wong
Also filed as: WONG WEI-ZHE
29 granted patents·15 pending applications·301 citations·filing 2002–2021
96Inventor score
Files withPOWERCHIP SEMICONDUCTOR CORP22EMEMORY TECHNOLOGY INC15YANG CHING-SUNG4MEDIATEK INC1POWERSHIP SEMICONDUCTOR CORP1
Top patents by PatentIndex Score
44 records- 0199US9613714B1One time programming memory cell and memory array for physically unclonable function technology and associated random code generating methodEMEMORY TECHNOLOGY INC·Filed 2016·Granted Apr 4, 2017·101 cites·20 claims
- 0296US9620176B2One-time programmable memory array having small chip areaEMEMORY TECHNOLOGY INC·Filed 2016·Granted Apr 11, 2017·13 cites·34 claims
- 0393US7436028B2One-time programmable read only memory and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Oct 14, 2008·20 cites·14 claims
- 0492US9634015B2Antifuse-type one time programming memory cell and array structure with sameEMEMORY TECHNOLOGY INC·Filed 2015·Granted Apr 25, 2017·10 cites·9 claims
- 0590US10181357B2Code generating apparatus and one time programming blockEMEMORY TECHNOLOGY INC·Filed 2016·Granted Jan 15, 2019·6 cites·2 claims
- 0690US9601499B2One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the sameEMEMORY TECHNOLOGY INC·Filed 2016·Granted Mar 21, 2017·6 cites·17 claims
- 0788US9799662B2Antifuse-type one time programming memory cell and array structure with sameEMEMORY TECHNOLOGY INC·Filed 2016·Granted Oct 24, 2017·6 cites·3 claims
- 0887US11366162B2Scan output flip-flop with power saving featureMEDIATEK INC·Filed 2021·Granted Jun 21, 2022·3 cites·24 claims
- 0986US10020268B2Random number generator device and control method thereofEMEMORY TECHNOLOGY INC·Filed 2017·Granted Jul 10, 2018·5 cites·9 claims
- 1085US7397080B2Non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jul 8, 2008·9 cites·9 claims
- 1185US7154142B2Non-volatile memory device and manufacturing method and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Dec 26, 2006·9 cites·19 claims
- 1285US6898126B1Method of programming a flash memory through boosting a voltage level of a source linePOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted May 24, 2005·39 cites·15 claims
- 1383US7291882B2Programmable and erasable digital switch device and fabrication method and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Nov 6, 2007·8 cites·37 claims
- 1480US7391078B2Non-volatile memory and manufacturing and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jun 24, 2008·5 cites·8 claims
- 1577US6822286B2Cmos-compatible read only memory and method for fabricating the sameEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 23, 2004·18 cites·14 claims
- 1677US6812083B2Fabrication method for non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 2, 2004·25 cites·7 claims
- 1770US7491607B2Method of fabricating flash memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Granted Feb 17, 2009·3 cites·7 claims
- 1867US10476680B2Electronic device with self-protection and anti-cloning capabilities and related methodEMEMORY TECHNOLOGY INC·Filed 2017·Granted Nov 12, 2019·1 cites·16 claims
- 1965US7452775B2Non-volatile memory device and manufacturing method and operating method thereofPOWERSHIP SEMICONDUCTOR CORP·Filed 2006·Granted Nov 18, 2008·2 cites·7 claims
- 2063US7462902B2Nonvolatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Dec 9, 2008·2 cites·11 claims
- 2162US7663904B2Operating method of one-time programmable read only memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Granted Feb 16, 2010·1 cites·7 claims
- 2260US6750504B2Low voltage single-poly flash memory cell and arrayEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jun 15, 2004·9 cites·20 claims
- 2354US2008227282A1Method of manufacturing non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 2454US2008198669A1Method of operating non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 2551US9799410B2Method for programming antifuse-type one time programmable memory cellEMEMORY TECHNOLOGY INC·Filed 2016·Granted Oct 24, 2017·0 cites·9 claims
- 2651US7336539B2Method of operating flash memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Granted Feb 26, 2008·0 cites·4 claims
- 2751US2008153232A1Manufacturing method of non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 2851US2008151645A1Operating method of non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 2951US2009021986A1Operating method of non-volatile memory devicePOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 3050US2009042350A1Manufacturing method of nonvolatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 3150US2009134452A1Non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 3248US10685728B2Code generating apparatus and one time programming blockEMEMORY TECHNOLOGY INC·Filed 2018·Granted Jun 16, 2020·0 cites·14 claims
- 3348US7335559B2Fabricating method of non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Granted Feb 26, 2008·0 cites·9 claims
- 3446US2017148801A1Antifuse-type one time programming memory cell and array structure with sameEMEMORY TECHNOLOGY INC·Filed 2017·Application pending·0 cites
- 3545US7274062B2Non-volatile memory and fabricating method and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Sep 25, 2007·0 cites·9 claims
- 3643US7429503B2Method of manufacturing well pick-up structure of non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Granted Sep 30, 2008·0 cites·20 claims
- 3743US2017117284A1One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the sameEMEMORY TECHNOLOGY INC·Filed 2017·Application pending·0 cites
- 3841US7235839B2Flash memory cell and fabricating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2004·Granted Jun 26, 2007·0 cites·7 claims
- 3940US2007040197A1Non-volatile memory, manufacturing method and operating method thereofYANG CHING-SUNG·Filed 2006·Application pending·0 cites
- 4037US2009238002A1Nand type non-volatile memory and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 4134US2006171206A1Non-volatile memory and fabricating method and operating method thereofWONG WEI-ZHE·Filed 2005·Application pending·0 cites
- 4233US2006175652A1Non-volatile memory and operating method thereofYANG CHING-SUNG·Filed 2005·Application pending·0 cites
- 4329US2006186481A1Non-volatile memory and manufacturing method and operating method thereofYANG CHING-SUNG·Filed 2005·Application pending·0 cites
- 4429US2006039200A1Non-volatile memory cell, fabrication method and operating method thereofYANG CHING-SUNG·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →