Inventor · disambiguated record
Karen Maex
Also filed as: MAEX KAREN · MAEX KAREN I J · MAEX KAREN IRMA JOSEF
27 granted patents·7 pending applications·1,381 citations·filing 1992–2009
97Inventor score
Files withIMEC INTER UNI MICRO ELECTR16IMEC VZW3APPLIED MATERIALS INC1ESCONJAUREGUI SANTIAGO CRUZ1IMEC1
Top patents by PatentIndex Score
34 records- 0198US6391785B1Method for bottomless deposition of barrier layers in integrated circuit metallization schemesIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted May 21, 2002·584 cites·32 claims
- 0297US6664192B2Method for bottomless deposition of barrier layers in integrated circuit metallization schemesIMEC INTER UNI MICRO ELECTR·Filed 2002·Granted Dec 16, 2003·77 cites·32 claims
- 0395US6852635B2Method for bottomless deposition of barrier layers in integrated circuit metallization schemesINTERUNIVERSITAIR NIZROELECMIC·Filed 2003·Granted Feb 8, 2005·137 cites·25 claims
- 0491US7319274B2Methods for selective integration of airgaps and devices made by such methodsIMEC INTER UNI MICRO ELECTR·Filed 2006·Granted Jan 15, 2008·30 cites·20 claims
- 0586US6720245B2Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect schemeIMEC INTER UNI MICRO ELECTR·Filed 2001·Granted Apr 13, 2004·57 cites·20 claims
- 0686US6662631B2Method and apparatus for characterization of porous filmsIMEC INTER UNI MICRO ELECTR·Filed 2002·Granted Dec 16, 2003·34 cites·10 claims
- 0785US7078352B2Methods for selective integration of airgaps and devices made by such methodsTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 18, 2006·33 cites·21 claims
- 0885US6593251B2Method to produce a porous oxygen-silicon layerIMEC INTER UNI MICRO ELECTR·Filed 2001·Granted Jul 15, 2003·29 cites·16 claims
- 0984US5780362ACoSi2 salicide methodFiled 1996·Granted Jul 14, 1998·67 cites·11 claims
- 1081US6495453B1Method for improving the quality of a metal layer deposited from a plating bathIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted Dec 17, 2002·36 cites·15 claims
- 1180US6635964B2Metallization structure on a fluorine-containing dielectric and a method for fabrication thereofIMEC INTER UNI MICRO ELECTR·Filed 2001·Granted Oct 21, 2003·25 cites·21 claims
- 1279US7037851B2Methods for selective integration of airgaps and devices made by such methodsIMEC INTER UNI MICRO ELECTR·Filed 2004·Granted May 2, 2006·27 cites·23 claims
- 1378US6435008B2Apparatus and method for determining porosityINTERUNIVERSITAIR MICROELECKTR·Filed 2001·Granted Aug 20, 2002·21 cites·4 claims
- 1477US7790600B2Synthesis of zeolite crystals and formation of carbon nanostructures in patterned structuresIMEC·Filed 2009·Granted Sep 7, 2010·5 cites·20 claims
- 1575US6255227B1Etching process of CoSi2 layersIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted Jul 3, 2001·17 cites·10 claims
- 1674US5271084AMethod and device for measuring temperature radiation using a pyrometer wherein compensation lamps are usedIMEC INTER UNI MICRO ELECTR·Filed 1992·Granted Dec 14, 1993·40 cites·14 claims
- 1772US6844266B2Anisotropic etching of organic-containing insulating layersIMEC INTER UNI MICRO ELECTR·Filed 2003·Granted Jan 18, 2005·15 cites·8 claims
- 1870US7124377B2Design method for essentially digital systems and components thereof and essentially digital systems made in accordance with the methodINTERNIVERSITAIR MICROELEKTRON·Filed 2004·Granted Oct 17, 2006·20 cites·29 claims
- 1970US6153484AEtching process of CoSi2 layersIMEC VZW·Filed 1996·Granted Nov 28, 2000·36 cites·5 claims
- 2064US7016028B2Method and apparatus for defect detectionIMEC INTER UNI MICRO ELECTR·Filed 2003·Granted Mar 21, 2006·9 cites·21 claims
- 2164US6245489B1Fluorinated hard mask for micropatterning of polymersIMEC VZW·Filed 1998·Granted Jun 12, 2001·26 cites·12 claims
- 2263US6323555B1Metallization structure on a fluorine-containing dielectric and a method for fabrication thereofINTERUNIVERSITIAR MICROELEKTRO·Filed 1999·Granted Nov 27, 2001·27 cites·11 claims
- 2362US7042091B2Fluorinated hard mask for micropatterning of polymersIMEC VZW·Filed 2001·Granted May 9, 2006·7 cites·5 claims
- 2462US6821884B2Method of fabricating a semiconductor deviceIMEC INTER UNI MICRO ELECTR·Filed 2002·Granted Nov 23, 2004·6 cites·15 claims
- 2550US6319736B1Apparatus and method for determining porosityIMEC INTER UNI MICRO ELECTR·Filed 1999·Granted Nov 20, 2001·13 cites·14 claims
- 2644US2006160353A1Methods for selective integration of airgaps and devices made by such methodsIMEC INTER UNI MICRO ELECTR·Filed 2006·Application pending·0 cites
- 2744US2005048782A1Method of fabricating a semiconductor deviceFiled 2004·Application pending·0 cites
- 2844US2005056941A1Method of fabricating a semiconductor deviceFiled 2004·Application pending·0 cites
- 2940US2003181066A1Method to produce a porous oxygen-silicon layerFiled 2003·Application pending·0 cites
- 3035US2002076935A1Anisotropic etching of organic-containing insulating layersFiled 2001·Application pending·0 cites
- 3130US6245653B1Method of filling an opening in an insulating layerAPPLIED MATERIALS INC·Filed 1999·Granted Jun 12, 2001·3 cites·16 claims
- 3230US2002045344A1Method of forming polycrystalline cosi2 salicide and products obtained thereofFiled 1998·Application pending·0 cites
- 3329US8470709B2Formation of metal-containing nano-particles for use as catalysts for carbon nanotube synthesisESCONJAUREGUI SANTIAGO CRUZ·Filed 2006·Granted Jun 25, 2013·0 cites·20 claims
- 3429US2002151170A1Method of forming polycrystalline CoSi2 salicide and products obtained thereofFiled 2000·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Karen Maex files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →