Method of fabricating a semiconductor device

Abstract

This invention relates to Integrated Circuit (IC) processing and fabrication. A device and a method are provided for etching an opening in an insulating layer while depositing a barrier layer on the side walls of the opening without essentially depositing a barrier layer on the bottom of the opening.

1 . A gaseous mixture for use in a method for forming at least one opening in an insulating layer on a substrate while depositing a barrier layer on side walls of the opening without essentially depositing the barrier layer on a bottom of the opening, wherein a plasma is generated from the gaseous mixture, and wherein the gaseous mixture comprises a first component, a second component, and a third component, wherein the first component deposits a barrier layer on the side wall of the opening, wherein the second component forms the opening in the insulating layer, and wherein the third component removes the barrier layer formed on the bottom of the opening.  
   
   
       2 . The gaseous mixture as recited in  claim 1 , wherein the first component is selected from the group consisting of 1-methyl silane, 2-methyl silane, 3-methyl silane, 4-methyl silane, a mixture of SiH 4  and N 2 , a mixture of WF 6  and N 2 , and mixtures thereof.  
   
   
       3 . The gaseous mixture as recited in  claim 1 , wherein the second component is selected from the group consisting of N x O y , C x F y H x O u , N 2 /O 2  mixtures, N 2 /H 2  mixtures, O 2 , O 3 , NH 3 , CO, CO 2 , CH 4 , and mixtures thereof.  
   
   
       4 . The gaseous mixture as recited in  claim 1 , wherein the third component comprises a chemical compound that forms a halogen ion or a radical in the plasma.  
   
   
       5 . The gaseous mixture as recited in  claim 4 , wherein the third component is selected from the group consisting of NF 3 , SF 6 , F 2 , ClF 3 , and mixtures thereof.  
   
   
       6 . The gaseous mixture as recited in  claim 4 , wherein the gaseous mixture further comprises an inert gas.