Method to produce a porous oxygen-silicon layer

Abstract

The present invention concerns a method to produce a porous oxygen-silicon insulating layer comprising following steps: applying a silicon oxygen layer to a substrate exposing the said substrate to a HP ambient.

What is claimed is:  
     
         1 . A semiconductor device comprising a substrate and at least one dielectric layer and at least one conducted layer, characterized in that said dielectric layer is a hydrogenated silicon oxycarbide layer having a dielectric constant in the range of 1.9 to 2.1.  
     
     
         2 . A semiconductor device comprising a substrate, a dielectric layer, and a conductive layer, wherein the dielectric layer comprises a porous oxygen-silicon insulating layer, and wherein the porous oxygen-silicon insulating layer comprises Si, O, and C.  
     
     
         3 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer further comprises N.  
     
     
         4 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer further comprises H.  
     
     
         5 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer further comprises N and H.  
     
     
         6 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer comprises silicon oxycarbide.  
     
     
         7 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer comprises hydrogenated silicon oxycarbide.  
     
     
         8 . The semiconductor device of  claim 2 , wherein a mean pore size of the porous oxygen-silicon insulating layer is from 1.7 nm to 3 nm.  
     
     
         9 . The semiconductor device of  claim 2 , wherein a mean pore size of the porous oxygen-silicon insulating layer is greater than or equal to 1.6 nm.  
     
     
         10 . The semiconductor device of  claim 2 , wherein a mean pore size of the porous oxygen-silicon insulating layer is greater than 1 nm.  
     
     
         11 . The semiconductor device of  claim 2 , wherein a relative volume of open pores to a film volume of the porous oxygen-silicon insulating layer is greater than 10%.  
     
     
         12 . The semiconductor device of  claim 2 , wherein a relative volume of open pores to a film volume of the porous oxygen-silicon insulating layer is greater than or equal to 30%.  
     
     
         13 . The semiconductor device of  claim 2 , wherein a relative volume of open pores to a film volume of the porous oxygen-silicon insulating layer is from 30% to 66.7%.  
     
     
         14 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer has a dielectric constant less than 2.3.  
     
     
         15 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer has a dielectric constant less than 2.0.  
     
     
         16 . The semiconductor device of  claim 2 , wherein the porous oxygen-silicon insulating layer has a dielectric constant from 1.9 to 2.1.  
     
     
         17 . A semiconductor device comprising a substrate, a dielectric layer, and a conductive layer, wherein the dielectric layer comprises a oxygen-silicon insulating layer having a dielectric constant in the range of 1.9 to 2.1, and wherein the oxygen-silicon insulating layer comprises Si, O, and C.  
     
     
         18 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer further comprises N.  
     
     
         19 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer further comprises H.  
     
     
         20 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer further comprises N and H.  
     
     
         21 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises silicon oxycarbide.  
     
     
         22 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises hydrogenated silicon oxycarbide.  
     
     
         23 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises a plurality of pores having a mean pore size of from 1.7 nm to 3 nm.  
     
     
         24 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises a plurality of pores having a mean pore size of greater than or equal to 1.6 nm.  
     
     
         25 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises a plurality of pores having a mean pore size of greater than 1 nm.  
     
     
         26 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises a plurality of open pores, and wherein a relative volume of open pores to a film volume of the oxygen-silicon insulating layer is greater than 10%.  
     
     
         27 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises a plurality of open pores, and wherein a relative volume of open pores to a film volume of the oxygen-silicon insulating layer is greater than or equal to 30%.  
     
     
         28 . The semiconductor device of  claim 17 , wherein the oxygen-silicon insulating layer comprises a plurality of open pores, and wherein a relative volume of open pores to a film volume of the oxygen-silicon insulating layer is from 30% to 66.7%.