Inventor · disambiguated record
Hongliang Shen
Also filed as: SHEN HONGLIANG
23 granted patents·7 pending applications·457 citations·filing 2013–2023
96Inventor score
Top patents by PatentIndex Score
30 records- 0199US9653583B1Methods of forming diffusion breaks on integrated circuit products comprised of finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 16, 2017·79 cites·25 claims
- 0298US9455198B1Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·51 cites·20 claims
- 0398US9406676B2Method for forming single diffusion breaks between finFET devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·41 cites·14 claims
- 0498US9368496B1Method for uniform recess depth and fill in single diffusion break for fin-type process and resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 14, 2016·77 cites·14 claims
- 0598US9171752B1Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a productGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 27, 2015·83 cites·17 claims
- 0697US9263516B1Product comprised of FinFET devices with single diffusion break isolation structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 16, 2016·22 cites·11 claims
- 0794US9123773B1T-shaped single diffusion barrier with single mask approach process flowGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·34 cites·20 claims
- 0894US9087870B2Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 21, 2015·18 cites·19 claims
- 0992US9123771B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·13 cites·19 claims
- 1090US10423078B1FinFET cut isolation opening revision to compensate for overlay inaccuracyGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 24, 2019·6 cites·11 claims
- 1187US9373535B2T-shaped fin isolation region and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 21, 2016·7 cites·19 claims
- 1285US9219002B2Overlay performance for a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·6 cites·14 claims
- 1384US10957701B1Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse deviceGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 23, 2021·4 cites·12 claims
- 1482US9385192B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·3 cites·7 claims
- 1580US10580857B2Method to form high performance fin profile for 12LP and aboveGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·3 cites·19 claims
- 1677US11037937B2SRAM bit cells formed with dummy structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·2 cites·17 claims
- 1776US10324381B1FinFET cut isolation opening revision to compensate for overlay inaccuracyGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·2 cites·4 claims
- 1871US9362176B2Uniform exposed raised structures for non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·2 cites·4 claims
- 1971US8969205B2Double patterning via triangular shaped sidewall spacersGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 3, 2015·2 cites·16 claims
- 2065US9159667B2Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structureGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 13, 2015·2 cites·12 claims
- 2156US2025056783A1Semiconductor fin with divots, transistor including the semiconductor fin, memory cell including the transistor, and associated methodsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2255US9123772B2FinFET fabrication methodGLOBALFOUNDARIES INC·Filed 2013·Granted Sep 1, 2015·0 cites·20 claims
- 2352US10804170B2Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structureGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 13, 2020·0 cites·14 claims
- 2447US2015333062A1Finfet fabrication methodGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2545US10910276B1STI structure with liner along lower portion of longitudinal sides of active region, and related FET and methodGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 2644US2015270159A1Fabrication of semiconductor structures using oxidized polycrystalline silicon as conformal stop layersGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2742US2015340319A1E-fuse structure for an integrated circuit productGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2842US2015123211A1NARROW DIFFUSION BREAK FOR A FIN FIELD EFFECT (FinFET) TRANSISTOR DEVICEGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2942US2015093877A1Method for manufacturing a semiconductor device by stopping planarization of insulating material on finsGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3033US2016315084A1Different height of fins in semiconductor structureGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →