E-fuse structure for an integrated circuit product

Abstract

An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.

1 . A device, comprising:
 a doped region formed in a semiconductor substrate;   an anode that is conductively coupled to said doped region, said anode being comprised of a first metal silicide region positioned on said doped region and a first conductive metal-containing contact that is positioned above and conductively coupled to said first metal silicide region; and   a cathode that is conductively coupled to said doped region and spaced apart from said anode, said cathode being comprised of a second metal silicide region positioned on said doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to said second metal silicide region.   
     
     
         2 . The device of  claim 1 , wherein said doped region has one of a substantially square or a substantially rectangular configuration when viewed from above. 
     
     
         3 . The device of  claim 1 , wherein said doped region is comprised of one of N type dopants or P-type dopants. 
     
     
         4 . The device of  claim 1 , wherein each of said anode and cathode are comprised of a single line-type feature. 
     
     
         5 . The device of  claim 1 , wherein said anode is comprised of a plurality of first spaced-apart, discrete features, each of which is comprised of said first metal silicide region and said first conductive structure, and wherein said cathode is comprised of a plurality of second spaced-apart, discrete features, each of which is comprised of said second metal silicide region and said second conductive structure. 
     
     
         6 . The device of  claim 1 , wherein said first metal silicide region is taller than said first conductive structure and said second metal silicide region is taller than said second conductive structure. 
     
     
         7 . The device of  claim 1 , wherein said first metal silicide region is shorter than said first conductive structure and said second metal silicide region is shorter than said second conductive structure. 
     
     
         8 . The device of  claim 1 , wherein said first and second metal silicide regions are comprised of one of nickel silicide, cobalt silicide, titanium silicide, platinum silicide or a combination of such silicide materials. 
     
     
         9 . The device of  claim 1 , wherein said first and second metal silicide regions are made of the same metal silicide. 
     
     
         10 . The device of  claim 1 , wherein said first and second conductive structures are made of the same metal-containing material. 
     
     
         11 . A device, comprising:
 a doped region formed in a semiconductor substrate, wherein said doped region is comprised of one of N-type dopants or P-type dopants;   an anode that is conductively coupled to said doped region, said anode being comprised of a first metal silicide region positioned on said doped region and a first conductive metal-containing contact that is positioned above and conductively coupled to said first metal silicide region; and   a cathode that is conductively coupled to said doped region and spaced apart from said anode, said cathode being comprised of a second metal silicide region positioned on said doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to said second metal silicide region, wherein said first and second metal silicide regions are made of the same metal silicide and wherein said first and second conductive structures are made of the same metal-containing material.   
     
     
         12 . The device of  claim 11 , wherein each of said anode and cathode are comprised of a single line-type feature. 
     
     
         13 . The device of  claim 11 , wherein said anode is comprised of a plurality of first spaced-apart, discrete features, each of which is comprised of said first metal silicide region and said first conductive structure, and wherein said cathode is comprised of a plurality of second spaced-apart, discrete features, each of which is comprised of said second metal silicide region and said second conductive structure. 
     
     
         14 . The device of  claim 11 , wherein said first metal silicide region is taller than said first conductive structure and said second metal silicide region is taller than said second conductive structure. 
     
     
         15 . The device of  claim 11 , wherein said first metal silicide region is shorter than said first conductive structure and said second metal silicide region is shorter than said second conductive structure. 
     
     
         16 . The device of  claim 11 , further comprising:
 a transistor formed in and above said semiconductor substrate, said transistor comprising a doped source/drain region formed in said substrate, a third metal silicide region positioned on said doped source/drain region and a third conductive metal-containing contact that is positioned above and conductively coupled to said third metal silicide region, wherein said third metal silicide region is made of the same metal silicide as said first and second metal silicide regions and wherein said third conductive structure is made of the same metal-containing material as said first and second conductive structures.   
     
     
         17 - 25 . (canceled)