Assignee
GLOBALFOUNDARIES INC
KY·7 granted patents·50 citations·filing 2012–2015
Top patents by PatentIndex Score
7 records- 0196US9368608B1Heterojunction bipolar transistor with improved performance and breakdown voltageGLOBALFOUNDARIES INC·Filed 2015·Granted Jun 14, 2016·26 cites·20 claims
- 0291US9064948B2Methods of forming a semiconductor device with low-k spacers and the resulting deviceGLOBALFOUNDARIES INC·Filed 2012·Granted Jun 23, 2015·11 cites·14 claims
- 0379US8966423B2Integrating optimal planar and three-dimensional semiconductor design layoutsGLOBALFOUNDARIES INC·Filed 2013·Granted Feb 24, 2015·5 cites·12 claims
- 0477US8940633B2Methods of forming semiconductor device with self-aligned contact elements and the resulting devicesGLOBALFOUNDARIES INC·Filed 2013·Granted Jan 27, 2015·4 cites·24 claims
- 0575US8765542B1Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regionsGLOBALFOUNDARIES INC·Filed 2013·Granted Jul 1, 2014·4 cites·16 claims
- 0655US9343589B2Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structuresGLOBALFOUNDARIES INC·Filed 2014·Granted May 17, 2016·0 cites·16 claims
- 0755US9123772B2FinFET fabrication methodGLOBALFOUNDARIES INC·Filed 2013·Granted Sep 1, 2015·0 cites·20 claims
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