Inventor · disambiguated record
Craig Metzner
Also filed as: METZNER CRAIG · METZNER CRAIG R
24 granted patents·9 pending applications·2,486 citations·filing 1998–2014
97Inventor score
Top patents by PatentIndex Score
33 records- 0198US6858547B2System and method for forming a gate dielectricAPPLIED MATERIALS INC·Filed 2002·Granted Feb 22, 2005·633 cites·31 claims
- 0298US6454860B2Deposition reactor having vaporizing, mixing and cleaning capabilitiesAPPLIED MATERIALS INC·Filed 1998·Granted Sep 24, 2002·692 cites·22 claims
- 0397US8726837B2Semiconductor process chamber vision and monitoring systemPATALAY KAILASH K·Filed 2008·Granted May 20, 2014·553 cites·20 claims
- 0495US8343279B2Apparatuses for atomic layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Jan 1, 2013·26 cites·19 claims
- 0595US7547952B2Method for hafnium nitride depositionAPPLIED MATERIALS INC·Filed 2006·Granted Jun 16, 2009·37 cites·15 claims
- 0694US8282992B2Methods for atomic layer deposition of hafnium-containing high-K dielectric materialsMYO NYI OO·Filed 2007·Granted Oct 9, 2012·376 cites·18 claims
- 0793US7531468B2System and method for forming a gate dielectricAPPLIED MATERIALS INC·Filed 2007·Granted May 12, 2009·22 cites·24 claims
- 0892US7569501B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·17 cites·20 claims
- 0991US7691204B2Film formation apparatus and methods including temperature and emissivity/pattern compensationAPPLIED MATERIALS INC·Filed 2005·Granted Apr 6, 2010·13 cites·20 claims
- 1091US7067439B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2002·Granted Jun 27, 2006·48 cites·25 claims
- 1188US8372203B2Apparatus temperature control and pattern compensationAPPLIED MATERIALS INC·Filed 2005·Granted Feb 12, 2013·9 cites·27 claims
- 1287US9356188B2Tensile separation of a semiconducting stackVEECO INSTR INC·Filed 2014·Granted May 31, 2016·5 cites·24 claims
- 1384US8852349B2Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defectsCHACIN JUAN·Filed 2006·Granted Oct 7, 2014·12 cites·40 claims
- 1480US7304004B2System and method for forming a gate dielectricAPPLIED MATERIALS INC·Filed 2004·Granted Dec 4, 2007·19 cites·29 claims
- 1577US8382180B2Advanced FI blade for high temperature extractionAPPLIED MATERIAL INC·Filed 2008·Granted Feb 26, 2013·6 cites·6 claims
- 1675US8951351B2Wafer processing hardware for epitaxial deposition with reduced backside deposition and defectsPATALAY KAILASH KIRAN·Filed 2007·Granted Feb 10, 2015·5 cites·20 claims
- 1772US8496780B2Apparatus for the deposition of high dielectric constant filmsRONSSE BOBBY M·Filed 2006·Granted Jul 30, 2013·6 cites·17 claims
- 1871US8524555B2Susceptor with backside area of constant emissivitySANCHEZ ERROL·Filed 2012·Granted Sep 3, 2013·2 cites·8 claims
- 1970US8071167B2Surface pre-treatment for enhancement of nucleation of high dielectric constant materialsKHER SHREYAS S·Filed 2010·Granted Dec 6, 2011·2 cites·20 claims
- 2069US7569500B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·2 cites·20 claims
- 2162US8226770B2Susceptor with backside area of constant emissivitySANCHEZ ERROL·Filed 2007·Granted Jul 24, 2012·1 cites·12 claims
- 2251US9761671B2Engineered substrates for use in crystalline-nitride based devicesVEECO INSTR INC·Filed 2014·Granted Sep 12, 2017·0 cites·13 claims
- 2351US7674337B2Gas manifolds for use during epitaxial film formationAPPLIED MATERIALS INC·Filed 2007·Granted Mar 9, 2010·0 cites·12 claims
- 2449US2006264067A1Surface pre-treatment for enhancement of nucleation of high dielectric constant materialsKHER SHREYAS S·Filed 2006·Application pending·0 cites
- 2548US2013333621A1Apparatus for the deposition of high dielectric constant filmsAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 2645US2002192370A1Deposition reactor having vaporizing, mixing and cleaning capabilitiesFiled 2002·Application pending·0 cites
- 2743US2008072820A1Modular cvd epi 300mm reactorAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2841US2004198069A1Method for hafnium nitride depositionAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2941US2003232501A1Surface pre-treatment for enhancement of nucleation of high dielectric constant materialsFiled 2002·Application pending·0 cites
- 3040US2007089836A1Semiconductor process chamberAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3138US8519298B2Split laser scribeWANG JIANMIN·Filed 2010·Granted Aug 27, 2013·0 cites·35 claims
- 3238US2003235961A1Cyclical sequential deposition of multicomponent filmsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3336US2003101938A1Apparatus for the deposition of high dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →