Apparatus for the deposition of high dielectric constant films

Abstract

An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors.

What is claimed: 
     
         1 . An apparatus for depositing a film, the apparatus comprising:
 a chamber body having a processing region defined therein;   a vaporizer;   a vapor delivery system having a first region beginning at the vaporizer, a second region communicating with the processing region and a third region disposed between the first and second regions, wherein the first region is maintained at a lower temperature than the second region; and   a chamber lid disposed on the chamber body and having inner and outer temperature control regions.   
     
     
         2 . The apparatus of  claim 1 , wherein a temperature gradient defined over the first and second regions is between about 20 to about 25 degrees Celsius. 
     
     
         3 . The apparatus of  claim 1 , wherein the first vapor path further comprises:
 a carrier gas supply line is coupled to the first vapor path at a transition between the first and third regions.   
     
     
         4 . The apparatus of  claim 1 , wherein a diameter of the third region is greater than a diameter of the first region and less than a diameter of the second region. 
     
     
         5 . The apparatus of  claim 1 , wherein a temperature of the third region is greater than a temperature of the first region and less than a temperature of the second region. 
     
     
         6 . The apparatus of  claim 1  further comprising:
 a hafnium precursor source coupled to the vaporizer. 
 
     
     
         7 . The apparatus of  claim 6 , wherein the temperature gradient is maintained between a minimum temperature of 100 degrees Celsius and a maximum temperature of 190 degrees Celsius. 
     
     
         8 . An apparatus for depositing a film, the apparatus comprising:
 a chamber body having a processing region defined therein;   a vaporizer;   a vapor delivery system having a first region beginning at the vaporizer, a second region communicating with the processing region and a third region disposed between the first and second regions, a diameter of the third region being greater than a diameter of the first region and less than a diameter of the second region; and   a chamber lid disposed on the chamber body and having inner and outer temperature control regions.   
     
     
         9 . The apparatus of  claim 8 , a carrier gas supply line is coupled to the first vapor path at a transition between the first and third regions. 
     
     
         10 . The apparatus of  claim 8 , wherein the first vapor path further comprises:
 wherein a temperature gradient defined over the first and second regions is between about 20 to about 25 degrees Celsius.   
     
     
         11 . The apparatus of  claim 8 , wherein a temperature of the third region is greater than a temperature of the first region and less than a temperature of the second region. 
     
     
         12 . The apparatus of  claim 8  further comprising:
 a hafnium precursor source coupled to the vaporizer. 
 
     
     
         13 . The apparatus of  claim 12 , wherein the temperature gradient is maintained between a minimum temperature of 100 degrees Celsius and a maximum temperature of 190 degrees Celsius.