Inventor · disambiguated record
Haruhiro Harry Goto
Also filed as: GOTO HARUHIRO · GOTO HARUHIRO H · GOTO HARUHIRO HARRY
22 granted patents·7 pending applications·641 citations·filing 1993–2014
97Inventor score
Files withNOVELLUS SYSTEMS INC10APPLIED MATERIALS INC6APPLIED KOMATSU TECHNOLOGY INC5GOTO HARUHIRO HARRY4CANON KK2
Top patents by PatentIndex Score
29 records- 0194US7740768B1Simultaneous front side ash and backside cleanNOVELLUS SYSTEMS INC·Filed 2006·Granted Jun 22, 2010·20 cites·21 claims
- 0294US6500356B2Selectively etching silicon using fluorine without plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Dec 31, 2002·67 cites·10 claims
- 0392US8193096B2High dose implantation strip (HDIS) in H2 base chemistryGOTO HARUHIRO HARRY·Filed 2008·Granted Jun 5, 2012·16 cites·26 claims
- 0492US7585777B1Photoresist strip method for low-k dielectricsNOVELLUS SYSTEMS INC·Filed 2007·Granted Sep 8, 2009·25 cites·20 claims
- 0591US8058178B1Photoresist strip method for low-k dielectricsGOTO HARUHIRO HARRY·Filed 2009·Granted Nov 15, 2011·22 cites·11 claims
- 0690US8444869B1Simultaneous front side ash and backside cleanGOTO HARUHIRO HARRY·Filed 2010·Granted May 21, 2013·11 cites·17 claims
- 0790US7288484B1Photoresist strip method for low-k dielectricsNOVELLUS SYSTEMS INC·Filed 2004·Granted Oct 30, 2007·53 cites·36 claims
- 0889US8641862B2High dose implantation strip (HDIS) in H2 base chemistryGOTO HARUHIRO HARRY·Filed 2012·Granted Feb 4, 2014·8 cites·20 claims
- 0989US5728278APlasma processing apparatusCANON KK·Filed 1994·Granted Mar 17, 1998·73 cites·29 claims
- 1088US6451390B1Deposition of TEOS oxide using pulsed RF plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·27 cites·5 claims
- 1187US7202176B1Enhanced stripping of low-k films using downstream gas mixingNOVELLUS SYSTEMS INC·Filed 2004·Granted Apr 10, 2007·48 cites·21 claims
- 1283US8435895B2Methods for stripping photoresist and/or cleaning metal regionsCHEN DAVID·Filed 2007·Granted May 7, 2013·11 cites·34 claims
- 1382US6880561B2Fluorine process for cleaning semiconductor process chamberAPPLIED MATERIALS INC·Filed 2003·Granted Apr 19, 2005·23 cites·12 claims
- 1481US5895549AMethod and apparatus for etching film layers on large substratesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1996·Granted Apr 20, 1999·62 cites·10 claims
- 1581US5607602AHigh-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Mar 4, 1997·63 cites·28 claims
- 1677US5316645APlasma processing apparatusCANON KK·Filed 1993·Granted May 31, 1994·39 cites·7 claims
- 1774US9373497B2Methods for stripping photoresist and/or cleaning metal regionsNOVELLUS SYSTEMS INC·Filed 2013·Granted Jun 21, 2016·3 cites·20 claims
- 1869US9941108B2High dose implantation strip (HDIS) in H2 base chemistryNOVELLUS SYSTEMS INC·Filed 2014·Granted Apr 10, 2018·1 cites·15 claims
- 1965US5843277ADry-etch of indium and tin oxides with C2H5I gasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Dec 1, 1998·30 cites·24 claims
- 2063US5980686ASystem and method for gas distribution in a dry etch processAPPLIED KOMATSU TECHNOLOGY INC·Filed 1998·Granted Nov 9, 1999·22 cites·19 claims
- 2159US7105100B2System and method for gas distribution in a dry etch processAPPLIED MATERIALS INC·Filed 2003·Granted Sep 12, 2006·5 cites·18 claims
- 2247US2009056875A1Enhanced stripping of low-K films using downstream gas mixingNOVELLUS SYSTEMS INC·Filed 2007·Application pending·0 cites
- 2345US2002192475A1Deposition of TEOS oxide using pulsed RF plasmaFiled 2002·Application pending·0 cites
- 2445US2006032516A1Method for the recovery of ash rate following metal etchingNOVELLUS SYSTEMS INC·Filed 2004·Application pending·0 cites
- 2545US2008216958A1Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the SameNOVELLUS SYSTEMS INC·Filed 2007·Application pending·0 cites
- 2643US2008102644A1Methods for removing photoresist from a semiconductor substrateNOVELLUS SYSTEMS INC·Filed 2006·Application pending·0 cites
- 2742US6472329B1Etching aluminum over refractory metal with successive plasmasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1999·Granted Oct 29, 2002·12 cites·11 claims
- 2841US2003109144A1Selectively etching silicon using fluorine without plasmaAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 2940US2003010354A1Fluorine process for cleaning semiconductor process chamberAPPLIED MATERIALS INC·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →