Fluorine process for cleaning semiconductor process chamber

Abstract

Abstract of Disclosure A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F 2 ) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF 3 , C 2 F 6 and SF 6 .

Claims 
     
         1.  A process for removing residue from one or more surfaces of chamber components exposed to the interior of a semiconductor process chamber, comprising the steps of: 
       
         supplying to a plasma chamber a gas mixture including one or more gases, 
       
       
         wherein one of the gases is molecular fluorine, and 
       
       
         wherein the molecular fluorine constitutes at least fifty percent of the gas mixture by molecular molar concentration; 
       
       
         forming a plasma in the plasma chamber so as to decompose a portion of the molecular fluorine into atomic fluorine; and 
       
       
         exposing the interior of the semiconductor process chamber to at least a portion of said atomic fluorine. 
       
     
     
         2.  A process according to  claim 1 , wherein the exposing step comprises: 
       
         
           transporting a portion of the atomic fluorine from the plasma chamber into the semiconductor process chamber. 
         
       
     
     
         3.  A process according to  claim 1 , wherein the plasma chamber and the semiconductor process chamber are the same chamber. 
     
     
         4.  A process according to  claim 1 , further comprising the steps of: 
       
         before the exposing step, depositing a film on a substrate within the semiconductor process chamber so as to produce residue on said surfaces of chamber components; 
       
       
         wherein the depositing step comprises depositing one or more of silicon, silicon oxide, and silicon nitride. 
       
     
     
         5.  A process according to  claim 1 , further comprising the steps of: 
       
         before the exposing step, etching a film on a substrate within the semiconductor process chamber so as to produce residue on said surfaces of chamber components; 
       
       
         wherein the etching step comprises etching one or more of silicon, silicon oxide, and silicon nitride. 
       
     
     
         6.  A process according to  claim 1 , wherein the molecular fluorine constitutes at least seventy percent of the gas mixture by molecular molar concentration. 
     
     
         7.  A process according to  claim 1 , wherein the gas mixture includes no substantial amount of any reactive gas other than molecular fluorine. 
     
     
         8.  A process for removing residue from one or more surfaces of chamber components exposed to the interior of a semiconductor process chamber, comprising the step of: 
       
         supplying to the semiconductor process chamber a gas mixture including one or more gases; 
       
       
         wherein one of the gases is molecular fluorine; and 
       
       
         wherein the molecular fluorine constitutes at least fifty percent of the gas mixture by molecular molar concentration. 
       
     
     
         9.  A process according to  claim 8 , further comprising the step of heating said surfaces sufficiently for the molecular fluorine to react with any silicon on said surfaces. 
     
     
         10.  A process according to  claim 8 , further comprising the steps of: 
       
         before the step of supplying the gas mixture, depositing a silicon film on a substrate within the semiconductor process chamber so as to produce on said surfaces of chamber components a residue containing silicon; and 
       
       
         during the step of supplying the gas mixture, elevating the temperature of said surfaces sufficiently for the molecular fluorine to react with the silicon in said residue. 
       
     
     
         11.  A process according to  claim 8 , wherein the molecular fluorine constitutes at least seventy percent of the gas mixture by molecular molar concentration. 
     
     
         12.  A process according to  claim 8 , wherein the gas mixture includes no substantial amount of any reactive gas other than molecular fluorine.