Enhanced stripping of low-K films using downstream gas mixing

Abstract

The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

1 - 21 . (canceled) 
   
   
       22 . An apparatus for removing material from a work piece surface in a reaction chamber comprising:
 a plasma source;   a gas inlet for introducing a hydrogen-based gas into the plasma source;   a gas inlet for introducing an inert gas downstream of the plasma source and upstream of the work piece; and   a process chamber.   
   
   
       23 . The apparatus of  claim 22  further comprising a showerhead assembly, said assembly comprising a showerhead for directing the plasma and inert gas into the process chamber. 
   
   
       24 . The apparatus of  claim 23  wherein the showerhead comprises at least 1000 holes. 
   
   
       25 . The apparatus of  claim 23  further comprising a platen for supporting the work piece. 
   
   
       26 . The apparatus of  claim 23  further comprising an RF coil for generating plasma in the plasma source. 
   
   
       27 . The apparatus of  claim 23  wherein the inert gas inlet comprises at least four inlet jets. 
   
   
       28 . The apparatus of  claim 27  wherein the gas jets are a at zero degree angle from the bottom of the plasma source. 
   
   
       29 . The apparatus of  claim 27  wherein the inert gas inlet comprises at least sixteen inlet jets. 
   
   
       30 . The apparatus of  claim 22  wherein the inert gas inlet is configured to inlet gas parallel to the face of the work piece. 
   
   
       31 . The apparatus of  claim 22  wherein the inert gas inlet comprises a plurality of inlet jets, wherein the angle of the inlet jets as measured from the bottom of the plasma source is zero degrees