Deposition of TEOS oxide using pulsed RF plasma

Abstract

A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

What is claimed is:  
     
         1 . A method for producing a silicon dioxide film comprising 
 placing a TEOS precursor and oxygen in a plasma state,    decomposing the TEOS gas into active species,    reacting the TEOS with oxygen ions or radicals in the plasma; and    depositing the active species on a substrate;    wherein energy for generating the TEOS oxide plasma is intermittently supplied at a supply time interval.    
     
     
         2 . The method for producing a silicon dioxide film of  claim 1 , wherein the silicon dioxide film is deposited at a rate of 1000 angstroms/min or less.  
     
     
         3 . A silicon dioxide film prepared by the method according to  claim 1 .  
     
     
         4 . The method for producing a silicon dioxide film of  claim 1  wherein a power for providing said energy, for plasma generation is intermittently brought down to at or about zero watts.  
     
     
         5 . The method for producing a silicon dioxide film of  claim 1 , wherein said substrate is glass.  
     
     
         6 . A substrate that comprises a layer of silicon dioxide film prepared by the method according to claim  1 .