Inventor · disambiguated record
Scott D. Halle
Also filed as: HALLE SCOTT · HALLE SCOTT D · HALLE SCOTT DAVID
43 granted patents·7 pending applications·867 citations·filing 1996–2021
98Inventor score
Top patents by PatentIndex Score
50 records- 0198US6316167B1Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereofIBM·Filed 2000·Granted Nov 13, 2001·189 cites·50 claims
- 0297US6514667B2Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereofIBM·Filed 2001·Granted Feb 4, 2003·108 cites·21 claims
- 0396US9929012B1Resist having tuned interface hardmask layer for EUV exposureIBM·Filed 2016·Granted Mar 27, 2018·20 cites·18 claims
- 0494US11079337B1Secure wafer inspection and identificationIBM·Filed 2020·Granted Aug 3, 2021·3 cites·20 claims
- 0594US6649531B2Process for forming a damascene structureIBM·Filed 2001·Granted Nov 18, 2003·87 cites·20 claims
- 0690US10642161B1Baseline overlay control with residual noise reductionIBM·Filed 2018·Granted May 5, 2020·5 cites·19 claims
- 0788US6607984B1Removable inorganic anti-reflection coating processIBM·Filed 2000·Granted Aug 19, 2003·42 cites·22 claims
- 0882US5915183ARaised source/drain using recess etch of polysiliconIBM·Filed 1998·Granted Jun 22, 1999·69 cites·14 claims
- 0982US5877061AMethods for roughening and volume expansion of trench sidewalls to form high capacitance trench cell for high density dram applicationsIBM·Filed 1997·Granted Mar 2, 1999·65 cites·14 claims
- 1078US11568101B2Predictive multi-stage modelling for complex process controlIBM·Filed 2019·Granted Jan 31, 2023·2 cites·16 claims
- 1178US5656535AStorage node process for deep trench-based DRAMSIEMENS AG·Filed 1996·Granted Aug 12, 1997·42 cites·20 claims
- 1276US8158334B2Methods for forming a composite pattern including printed resolution assist featuresGABOR ALLEN H·Filed 2008·Granted Apr 17, 2012·6 cites·20 claims
- 1374US6355567B1Retrograde openings in thin filmsIBM·Filed 1999·Granted Mar 12, 2002·42 cites·10 claims
- 1473US8293454B2Process of making a lithographic structure using antireflective materialsANGELOPOULOS MARIE·Filed 2008·Granted Oct 23, 2012·2 cites·25 claims
- 1573US6204140B1Dynamic random access memoryINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Mar 20, 2001·33 cites·7 claims
- 1672US6794242B1Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contactsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 21, 2004·12 cites·14 claims
- 1772US6326260B1Gate prespacers for high density, high performance DRAMsIBM·Filed 2000·Granted Dec 4, 2001·16 cites·14 claims
- 1871US9059102B2Metrology marks for unidirectional grating superposition patterning processesIBM·Filed 2013·Granted Jun 16, 2015·2 cites·17 claims
- 1971US7759235B2Semiconductor device manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 20, 2010·5 cites·27 claims
- 2070US7914975B2Multiple exposure lithography method incorporating intermediate layer patterningIBM·Filed 2007·Granted Mar 29, 2011·3 cites·16 claims
- 2170US6153474AMethod of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrateIBM·Filed 1998·Granted Nov 28, 2000·28 cites·18 claims
- 2270US5691540AAssembly for measuring a trench depth parameter of a workpieceIBM·Filed 1996·Granted Nov 25, 1997·32 cites·6 claims
- 2369US8039203B2Integrated circuits and methods of design and manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 18, 2011·3 cites·26 claims
- 2467US7993815B2Line ends formingIBM·Filed 2007·Granted Aug 9, 2011·3 cites·13 claims
- 2566US7077903B2Etch selectivity enhancement for tunable etch resistant anti-reflective layerIBM·Filed 2003·Granted Jul 18, 2006·9 cites·20 claims
- 2664US9928316B2Process-metrology reproducibility bands for lithographic photomasksIBM·Filed 2015·Granted Mar 27, 2018·1 cites·15 claims
- 2764US7485573B2Process of making a semiconductor device using multiple antireflective materialsIBM·Filed 2006·Granted Feb 3, 2009·1 cites·1 claims
- 2863US12086528B2Secure fingerprinting of a trusted photomaskIBM·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 2963US7229936B2Method to reduce photoresist pattern collapse by controlled surface microrougheningIBM·Filed 2004·Granted Jun 12, 2007·8 cites·14 claims
- 3059US10141188B2Resist having tuned interface hardmask layer for EUV exposureIBM·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 3159US10134592B2Resist having tuned interface hardmask layer for EUV exposureIBM·Filed 2017·Granted Nov 20, 2018·0 cites·20 claims
- 3258US8609322B2Process of making a lithographic structure using antireflective materialsANGELOPOULOS MARIE·Filed 2012·Granted Dec 17, 2013·0 cites·17 claims
- 3358US6444531B1Disposable spacer technology for device tailoringINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 3, 2002·8 cites·14 claims
- 3455US6197632B1Method for dual sidewall oxidation in high density, high performance DRAMSIBM·Filed 1999·Granted Mar 6, 2001·14 cites·12 claims
- 3554US10210292B2Process-metrology reproducibility bands for lithographic photomasksIBM·Filed 2017·Granted Feb 19, 2019·0 cites·15 claims
- 3650US2013181267A1Wafer fill patterns and usesIBM·Filed 2013·Application pending·0 cites
- 3749US7749903B2Gate patterning scheme with self aligned independent gate etchIBM·Filed 2008·Granted Jul 6, 2010·0 cites·19 claims
- 3847US10437951B2Care area generation by detection optimized methodologyIBM·Filed 2017·Granted Oct 8, 2019·0 cites·14 claims
- 3947US8053172B2Photoresists and methods for optical proximity correctionIBM·Filed 2008·Granted Nov 8, 2011·2 cites·23 claims
- 4047US7268082B2Highly selective nitride etching employing surface mediated uniform reactive layer filmsIBM·Filed 2004·Granted Sep 11, 2007·1 cites·20 claims
- 4147US2023177218A1Enabling device security by design enumeration selective targetingIBM·Filed 2021·Application pending·0 cites
- 4247US2007015082A1Process of making a lithographic structure using antireflective materialsIBM·Filed 2005·Application pending·0 cites
- 4346US8507346B2Method of forming a semiconductor device having a cut-way hole to expose a portion of a hardmask layerBURKHARDT MARTIN·Filed 2010·Granted Aug 13, 2013·0 cites·4 claims
- 4442US2009065956A1Memory cellIBM·Filed 2007·Application pending·0 cites
- 4542US2021049242A1Process Optimization by Clamped Monte Carlo DistributionIBM·Filed 2019·Application pending·0 cites
- 4639US7968270B2Process of making a semiconductor device using multiple antireflective materialsIBM·Filed 2008·Granted Jun 28, 2011·0 cites·20 claims
- 4738US2004256651A1Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contactsINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 4836US2001054729A1Gate prespacers for high density, high performance dramsIBM·Filed 2001·Application pending·0 cites
- 4934US8875063B2Mask layout formationBAUM ZACHARY·Filed 2010·Granted Oct 28, 2014·0 cites·16 claims
- 5033US6210995B1Method for manufacturing fusible links in a semiconductor deviceIBM·Filed 1999·Granted Apr 3, 2001·4 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →