Process of making a lithographic structure using antireflective materials

Abstract

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiO x backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.

1 . A lithographic structure comprising: 
 an organic antireflective material disposed on a substrate; and    a silicon antireflective material disposed on the organic antireflective material, wherein the silicon antireflective material comprises a crosslinked polymer with a SiO x  backbone, a chromophore attached to the SiO x  backbone, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation.    
   
   
       2 . The lithographic structure of  claim 1  wherein the chromophore provides the site for crosslinking.  
   
   
       3 . The lithographic structure of  claim 1  wherein the chromophore is selected from the group consisting of phenyl, phenol, naphthalene, and an unsaturated organic group.  
   
   
       4 . The lithographic structure of  claim 1  wherein the crosslinked polymer further comprises a reaction product resulting from the reaction of a thermal acid generator.  
   
   
       5 . The lithographic structure of  claim 1  wherein the transparent organic group that is substantially transparent provides the site of crosslinking.  
   
   
       6 . The lithographic structure of  claim 1  wherein the transparent organic group is a hydrofluorocarbon or perfluorocarbon.  
   
   
       7 . The lithographic structure of  claim 5  wherein the transparent organic group includes one or more organic functional group selected from an epoxide, alcohol, acetoxy, ester or ether.  
   
   
       8 . The lithographic structure of  claim 5  wherein the transparent organic group is a cycloaliphatic epoxide.  
   
   
       9 . The lithographic structure of  claim 1  wherein the crosslinked polymer comprises units of a glycoluril compound.  
   
   
       10 . The lithographic structure of  claim 1  wherein the organic antireflective material comprises a polymer with crosslinked phenolic sites, and a number average molecular weight of about 2,000 to about 10,000.  
   
   
       11 . The lithographic structure of  claim 1  further comprising a photoresist on the silicon antireflective material.  
   
   
       12 . The lithographic structure of  claim 1  wherein the organic antireflective material has an index of refraction (n) of 1.3-2.0 and an extinction coefficient (k) of 0.4-0.9, at 193 nm radiation, and the silicon antireflective material has an index of refraction (n) of 1.5-2.2 and an extinction coefficient (k) of 0.1-0.8 at 193 nm radiation.  
   
   
       13 . The lithographic structure of  claim 1  wherein the silicon antireflective material and the organic antireflective material together provide a reflectivity below 0.5% up to numerical aperture (NA) of 1.4.  
   
   
       14 . The lithographic structure of  claim 4  wherein the silicon antireflective material and the organic antireflective material together provide a reflectivity below 0.5% up to numerical aperture (NA) of 1.4.  
   
   
       15 . The lithographic structure of  claim 7  wherein the silicon antireflective material and the organic antireflective material together provide a reflectivity below 0.5% up to numerical aperture (NA) of 1.4.  
   
   
       16 . The lithographic structure of  claim 1  wherein the silicon antireflective material has a thickness of T k  and the organic antireflective material has a thickness of about 2T k  to about 12T k , wherein the thickness T k  is in nanometers.  
   
   
       17 . An antireflective material comprising an organic antireflective material and a silicon antireflective material disposed on the organic antireflective material, wherein the silicon antireflective material comprises: 
 a crosslinked polymer with a SiO x  backbone;    a chromophore attached to the SiO x  backbone; and    a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation.    
   
   
       18 . The antireflective material of  claim 17  wherein the silicon antireflective material further comprises a reaction product resulting from the reaction of a thermal acid generator.  
   
   
       19 . The antireflective material of  claim 17  wherein the transparent organic group provides the site of crosslinking, and is one or more organic functional groups selected from an epoxide, alcohol, acetoxy, ester or ether.  
   
   
       20 . The antireflective material  19  wherein the transparent organic group is a cycloaliphatic epoxide.  
   
   
       21 . The antireflective material of  claim 17  wherein the organic antireflective material has an index of refraction (n) of 1.3-2.0 and an extinction coefficient (k) of 0.4-0.9, at 193 nm radiation, and the silicon antireflective material has an index of refraction (n) of 1.5-2.2 and an extinction coefficient (k) of 0.1-0.8 at 193 nm radiation, and the silicon antireflective material and the organic antireflective material together provide a reflectivity below 0.5% up to numerical aperture (NA) of 1.4.  
   
   
       22 . The antireflective material of  claim 17  wherein the silicon antireflective material has a thickness of T k  and the organic antireflective material has a thickness of about 2T k  to about 12T k , wherein the thickness T k  is in nanometers.  
   
   
       23 . A process of making a lithographic structure comprising: 
 providing a substrate;    providing an organic antireflective material on the substrate;    providing a silicon antireflective material on the organic antireflective material, wherein the silicon antireflective material comprises a crosslinked polymer with a SiO x  backbone, a chromophore attached to the SiO x  backbone; and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation,    depositing a photoresist on the silicon antireflective material, pattern expose the photoresist to radiation, and remove portions of the photoresist to expose the silicon antireflective material,    removing portions of the silicon antireflective material to expose the organic antireflective material;    removing portions of the organic antireflective material to expose portions of the substrate; and    removing portions of the substrate.    
   
   
       24 . The process of  claim 23  wherein removing portions of the silicon antireflective material, and the organic antireflective material is accomplished by reactive ion etching in a plasma.  
   
   
       25 . The process of  claim 23  wherein the deposited silicon antireflective material has a thickness T k  and the organic antireflective material has a thickness of about 2T k  to about 12T k , wherein the thickness T k  is in nanometers.  
   
   
       26 . The process of  claim 23  wherein the deposited silicon antireflective material and the deposited organic antireflective material together provide a reflectivity below 0.5% up to numerical aperture (NA) of 1.4.  
   
   
       27 . The process of  claim 24  wherein the silicon antireflective material further comprises a reaction product resulting from the reaction of a thermal acid generator.  
   
   
       28 . The process of  claim 24  wherein the removing portions of the organic antireflective material includes introducing a taper.  
   
   
       29 . A process of  claim 23  wherein the silicon antireflective material comprises the silicon backbone of  
     
       
         
         
             
             
         
       
       which is crosslinked with a crosslinking agent of formula  
       
         
           
           
               
               
           
         
       
       and prepared in the presence of an acid generator of formula  
       
         
           
           
               
               
           
         
       
       wherein A is S or I, and x is 0 to 7.