Inventor · disambiguated record
Takayuki Nishiura
Also filed as: NISHIURA TAKAYUKI
24 granted patents·18 pending applications·144 citations·filing 2001–2017
95Inventor score
Top patents by PatentIndex Score
42 records- 0196US7416604B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 26, 2008·41 cites·2 claims
- 0293US7854804B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Dec 21, 2010·16 cites·4 claims
- 0391US8828140B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 9, 2014·7 cites·8 claims
- 0490US7713844B2Nitride semiconductor substrate, and method for working nitride semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 11, 2010·28 cites·5 claims
- 0589US8192543B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2008·Granted Jun 5, 2012·9 cites·3 claims
- 0682US7851381B2Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Dec 14, 2010·8 cites·15 claims
- 0780US8044493B2GaAs semiconductor substrate for group III-V compound semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Oct 25, 2011·6 cites·2 claims
- 0879US7569493B2Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 4, 2009·5 cites·44 claims
- 0973US7737043B2Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 15, 2010·5 cites·13 claims
- 1072US7507668B2Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Mar 24, 2009·3 cites·5 claims
- 1171US7432186B2Method of surface treating substrates and method of manufacturing III-V compound semiconductorsSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Oct 7, 2008·3 cites·7 claims
- 1270US7960284B2III-V compound semiconductor substrate manufacturing methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Jun 14, 2011·3 cites·6 claims
- 1365US9000567B2Compound semiconductor substrateMIYAHARA KENICHI·Filed 2012·Granted Apr 7, 2015·3 cites·10 claims
- 1464US9691608B2Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 27, 2017·1 cites·16 claims
- 1562US10078059B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Sep 18, 2018·0 cites·6 claims
- 1662US9570540B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 14, 2017·0 cites·8 claims
- 1762US7619301B2GaAs semiconductor substrate and fabrication method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Nov 17, 2009·2 cites·2 claims
- 1860US2010123168A1Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1959US8381493B2Method of packaging compound semiconductor substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 26, 2013·3 cites·8 claims
- 2058US8115927B2Production method of compound semiconductor memberHACHIGO AKIHIRO·Filed 2009·Granted Feb 14, 2012·0 cites·6 claims
- 2156US9035429B2Group III nitride crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted May 19, 2015·0 cites·2 claims
- 2256US8177911B2Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membraneHACHIGO AKIHIRO·Filed 2007·Granted May 15, 2012·0 cites·6 claims
- 2356US2009291567A1Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2455US2009159845A1Polishing slurry, method of treating surface of gaxin1-xasyp1-y crystal and gaxin1-xasyp1-y crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2554US8133815B2Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrateMEZAKI YOSHIO·Filed 2007·Granted Mar 13, 2012·1 cites·4 claims
- 2654US2007254401A1Method of processing a surface of group III nitride crystal and group III nitride crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 2753US2006272573A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 2853US2014124826A1Method of surface treatment of group iii nitride crystal film, group iii nitride crystal substrate, group iii nitride crystal substrate with epitaxial layer, and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 2952US2006281201A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 3049US2012100643A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneHACHIGO AKIHIRO·Filed 2012·Application pending·0 cites
- 3148US2006236922A1Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 3247US2010227532A1Method of surface treatment of group iii nitride crystal film, group iii nitride crystal substrate, group iii nitride crystal substrate with epitaxial layer, and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3344US8338299B2Method of processing a surface of group III nitride crystal and group III nitride crystal substrateNISHIURA TAKAYUKI·Filed 2010·Granted Dec 25, 2012·0 cites·4 claims
- 3444US2006292832A1Method of working nitride semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 3542US8841215B2Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing methodISHIBASHI KEIJI·Filed 2012·Granted Sep 23, 2014·0 cites·13 claims
- 3641US2007207630A1Surface treatment method of compound semiconductor substrate, fabrication method of compound semiconductor, compound semiconductor substrate, and semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 3739US2018369723A1Method for operating filtration apparatus and filtration apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 3838US2011018105A1Nitride-based compound semiconductor device, compound semiconductor device, and method of producing the devicesSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3936US2007023321A1Container, a packaging body, manufacturing method of a container, manufacturing method of a packaging body, and a compound semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 4036US2008292877A1Method of Cleaning Gaas Substrate, Method of Producing Gaas Substrate, Method of Fabricating Epitaxial Susbstrate, and Gaas WaferHORIE YUSUKE·Filed 2005·Application pending·0 cites
- 4136US2006281328A1Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 4230US2001023022A1Group III-V compound semiconductor wafers and manufacturing method thereofFiled 2001·Application pending·0 cites
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