Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane

Abstract

A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

1 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.    
   
   
       2 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a maximum absolute value of a slope of the spectrum in the wavelength band.    
   
   
       3 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses an absolute value of an extremum of a first derivative of the spectrum in the wavelength band.    
   
   
       4 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a wavelength at which an absolute value of a slope of the spectrum in the wavelength band is maximum.    
   
   
       5 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a maximum of the spectrum in the wavelength band.    
   
   
       6 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using a peak in a separate wavelength band located on a longer wavelength side than a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement.    
   
   
       7 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing spectroscopic ellipsometry measurement on a surface of a damage layer in the compound semiconductor member having a compound semiconductor region and the damage layer provided on the compound semiconductor region; and    a step of evaluating damage on the surface of the damage layer in the compound semiconductor member, using a peak appearing in a spectrum of an imaginary part of a complex index of refraction with at least one reflection of light between the compound semiconductor region and the damage layer, in the spectrum of the imaginary part of the complex index of refraction obtained by the spectroscopic ellipsometry measurement.    
   
   
       8 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a maximum absolute value of a slope of the spectrum in the wavelength band.    
   
   
       9 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses an absolute value of an extremum of a first derivative of the spectrum in the wavelength band.    
   
   
       10 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a wavelength at which an absolute value of a slope of the spectrum in the wavelength band is maximum.    
   
   
       11 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is an imaginary part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a maximum of the spectrum in the wavelength band.    
   
   
       12 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using a peak in a separate wavelength band located on a longer wavelength side than a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement.    
   
   
       13 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing spectroscopic ellipsometry measurement on a surface of a damage layer in the compound semiconductor member having a compound semiconductor region and the damage layer provided on the compound semiconductor region; and    a step of evaluating damage on the surface of the damage layer in the compound semiconductor member, using a peak appearing in a spectrum of an imaginary part of a complex dielectric constant with at least one reflection of light between the compound semiconductor region and the damage layer, in the spectrum of the imaginary part of the complex dielectric constant of refraction obtained by the spectroscopic ellipsometry measurement.    
   
   
       14 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a maximum absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum in the spectrum in the wavelength band.    
   
   
       15 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a maximum absolute value of a slope in a portion located on a longer wavelength side than a wavelength corresponding to a maximum in the spectrum in the wavelength band.    
   
   
       16 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a wavelength at which an absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum in the spectrum in the wavelength band is maximum.    
   
   
       17 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex index of refraction, and 
 wherein the step of evaluating the damage uses a maximum of the spectrum in the wavelength band.    
   
   
       18 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a maximum absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum in the spectrum in the wavelength band.    
   
   
       19 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a maximum absolute value of a slope in a portion located on a longer wavelength side than a wavelength corresponding to a maximum in the spectrum in the wavelength band.    
   
   
       20 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a wavelength at which an absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum in the spectrum in the wavelength band is maximum.    
   
   
       21 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the optical constant is a real part of a complex dielectric constant, and 
 wherein the step of evaluating the damage uses a maximum of the spectrum in the wavelength band.    
   
   
       22 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is a compound semiconductor substrate.  
   
   
       23 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is a compound semiconductor membrane provided on a substrate.  
   
   
       24 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of a monocrystalline material or polycrystalline material.  
   
   
       25 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the bandgap is not less than 1.6×10 −19  J.  
   
   
       26 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of a nitride compound semiconductor containing at least one of B, Al, and Ga.  
   
   
       27 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of an oxide compound semiconductor containing at least one of Be and Zn.  
   
   
       28 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of a ZnSe compound semiconductor.  
   
   
       29 - 46 . (canceled)  
   
   
       47 . A gallium nitride compound semiconductor member wherein an absolute value of a difference between an imaginary part of a complex index of refraction at 360 nm and an imaginary part of a complex index of refraction at 370 nm obtained by spectroscopic ellipsometry measurement on a surface is not less than 0.045.  
   
   
       48 . A gallium nitride compound semiconductor member wherein an absolute value of an imaginary part of a complex index of refraction at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not more than 0.18.  
   
   
       49 . A gallium nitride compound semiconductor member wherein in a spectrum of an imaginary part of a complex index of refraction obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a wavelength at which an absolute value of a slope of a spectrum in a wavelength band of 300 to 400 nm is maximum, is not less than 350 nm.  
   
   
       50 . A gallium nitride compound semiconductor member wherein an absolute value of a difference between an imaginary part of a complex dielectric constant at 360 nm and an imaginary part of a complex dielectric constant at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.24.  
   
   
       51 . A gallium nitride compound semiconductor member wherein an absolute value of an imaginary part of a complex dielectric constant at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not more than 0.9.  
   
   
       52 . A gallium nitride compound semiconductor member wherein in a spectrum of an imaginary part of a complex dielectric constant obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a wavelength at which an absolute value of a slope of a spectrum in a wavelength band of 300 to 400 nm is maximum, is not less than 350 nm.  
   
   
       53 . A gallium nitride compound semiconductor member wherein an absolute value of a difference between a real part of a complex index of refraction at 365 nm and a real part of a complex index of refraction at 375 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.035.  
   
   
       54 . A gallium nitride compound semiconductor member wherein in a spectrum of a real part of a complex index of refraction obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a maximum of a spectrum in a wavelength band of 300 to 400 nm is not less than 2.7.  
   
   
       55 . A gallium nitride compound semiconductor member wherein an absolute value of a difference between a real part of a complex dielectric constant at 365 nm and a real part of a complex dielectric constant at 375 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.13.  
   
   
       56 . A gallium nitride compound semiconductor member wherein in a spectrum of a real part of a complex dielectric constant obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a maximum of a spectrum in a wavelength band of 300 to 400 nm is not less than 7.2.  
   
   
       57 . A gallium nitride compound semiconductor member wherein a thickness of a layer containing at least one of an oxide film and an uneven layer formed on a surface of the gallium nitride compound semiconductor member is not more than 6 nm.  
   
   
       58 . The gallium nitride compound semiconductor member according to  claim 47 , said gallium nitride compound semiconductor member being a gallium nitride compound semiconductor substrate.  
   
   
       59 . The gallium nitride compound semiconductor member according to  claim 47 , said gallium nitride compound semiconductor member being a gallium nitride compound semiconductor membrane provided on a substrate.  
   
   
       60 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein an absolute value of a difference between an imaginary part of a complex index of refraction at 360 nm and an imaginary part of a complex index of refraction at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.045.  
   
   
       61 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein an absolute value of an imaginary part of a complex index of refraction at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not more than 0.18.  
   
   
       62 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein in a spectrum of an imaginary part of a complex index of refraction obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a wavelength at which an absolute value of a slope of a spectrum in a wavelength band of 300 to 400 nm is maximum, is not less than 350 nm.  
   
   
       63 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein an absolute value of a difference between an imaginary part of a complex dielectric constant at 360 nm and an imaginary part of a complex dielectric constant at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.24.  
   
   
       64 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein an absolute value of an imaginary part of a complex dielectric constant at 370 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not more than 0.9.  
   
   
       65 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein in a spectrum of an imaginary part of a complex dielectric constant obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a wavelength at which an absolute value of a slope of a spectrum in a wavelength band of 300 to 400 nm is maximum, is not less than 350 nm.  
   
   
       66 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein an absolute value of a difference between a real part of a complex index of refraction at 365 nm and a real part of a complex index of refraction at 375 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.035.  
   
   
       67 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein in a spectrum of a real part of a complex index of refraction obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a maximum of a spectrum in a wavelength band of 300 to 400 nm is not less than 2.7.  
   
   
       68 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein an absolute value of a difference between a real part of a complex dielectric constant at 365 nm and a real part of a complex dielectric constant at 375 nm obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member is not less than 0.13.  
   
   
       69 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein in a spectrum of a real part of a complex dielectric constant obtained by spectroscopic ellipsometry measurement on a surface of the gallium nitride compound semiconductor member, a maximum of a spectrum in a wavelength band of 300 to 400 nm is not less than 7.2.  
   
   
       70 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein a thickness of a layer containing at least one of an oxide film and an uneven layer formed on a surface of the gallium nitride compound semiconductor member is not more than 6 nm.