Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate

Abstract

There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.

1 - 44 . (canceled) 
   
   
       45 . A method of producing a compound semiconductor, comprising the steps of:
 preparing a compound semiconductor;   cleaning said compound semiconductor with a cleaning liquid;   after cleaning said compound semiconductor, rinsing a surface of said compound semiconductor with a rinsing liquid adjusted to have a pH of at least 6.5 and at most 7.5 and vibrated, wherein said rinsing liquid is one selected from pure water, electrolyzed ion water, and a solution having gas, liquid and/or the like added thereto; and   after the step of rinsing said surface of said compound semiconductor, performing a process to deposit a film on said compound semiconductor.