Polishing slurry, method of treating surface of gaxin1-xasyp1-y crystal and gaxin1-xasyp1-y crystal substrate

Abstract

The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a Ga x In 1-x As y P 1-y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO 2 , this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d 2 /d 1 of an average particle diameter d 2 of a secondary particle to an average particle diameter d 1 of a primary particle is not less than 1.6 and not more than 10. According to such the polishing slurry, a crystal surface having a small surface roughness can be formed on a Ga x In 1-x As y P 1-y crystal at a high polishing rate and effectively.

1 - 13 . (canceled) 
   
   
       14 . A GaxIn1-xAsyP1-y crystal substrate obtained by a method of treating a surface of a GaInx1-xAsyP1-y crystal, characterized in that said surface treating method comprises the steps of: a preparing a polishing slurry containing abrasive grains formed of SiO2, wherein said abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1 of an average particle diameter d2 of said secondary particle to an average particle diameter d1 of said primary particle is not less than 1.6 and not more than 10, and chemically mechanically polishing a surface of the GaxIn1-xAsyP1-y crystal using said polishing slurry.