Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane

Abstract

A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.

1 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.    
   
   
       2 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using an intensity of a peak located on a longer wavelength side than a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.    
   
   
       3 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak located on a longer wavelength side than a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.    
   
   
       4 . A method of evaluating damage of a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of evaluating damage on the surface of the compound semiconductor member, using a ratio of an intensity of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member to an intensity of a peak located on a longer wavelength side than the wavelength corresponding to the bandgap, in an emission spectrum obtained by the measurement of photoluminescence.    
   
   
       5 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is a compound semiconductor substrate.  
   
   
       6 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is a compound semiconductor membrane provided on a substrate.  
   
   
       7 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of either one of monocrystalline material and polycrystalline material.  
   
   
       8 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the bandgap is not less than 1.6×10 −19  J.  
   
   
       9 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of a nitride compound semiconductor containing at least one of B, Al, and Ga.  
   
   
       10 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of an oxide compound semiconductor containing at least one of Be and Zn.  
   
   
       11 . The damage evaluation method of the compound semiconductor member according to  claim 1 , wherein the compound semiconductor member is comprised of a ZnSe compound semiconductor.  
   
   
       12 . A method of producing a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of determining that the compound semiconductor member is nondefective when a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member in an emission spectrum obtained by the measurement of photoluminescence is not more than a predetermined threshold.    
   
   
       13 . A method of producing a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of determining that the compound semiconductor member is nondefective when an intensity of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member in an emission spectrum obtained by the measurement of photoluminescence is not less than a predetermined threshold with respect to an intensity of a peak at the wavelength in an emission spectrum obtained by measurement of photoluminescence on a surface of a compound semiconductor member without damage.    
   
   
       14 . A method of producing a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of determining that the compound semiconductor member is nondefective when a half width of a peak on a longer wavelength side than a wavelength corresponding to a bandgap of the compound semiconductor member in an emission spectrum obtained by the measurement of photoluminescence is not more than a predetermined threshold.    
   
   
       15 . A method of producing a compound semiconductor member, comprising: 
 a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and    a step of determining that the compound semiconductor member is nondefective when a ratio of an intensity of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member to an intensity of a peak located on a longer wavelength side than the wavelength corresponding to the bandgap in an emission spectrum obtained by the measurement of photoluminescence is not less than a predetermined threshold.    
   
   
       16 . The production method of the compound semiconductor member according to  claim 12 , wherein the compound semiconductor member is a compound semiconductor substrate.  
   
   
       17 . The production method of the compound semiconductor member according to  claim 12 , wherein the compound semiconductor member is a compound semiconductor membrane provided on a substrate.  
   
   
       18 . The production method of the compound semiconductor member according to  claim 12 , further comprising a step of forming a thin film on the surface of the compound semiconductor member, after the step of determining that the compound semiconductor member is nondefective.  
   
   
       19 . The production method according to  claim 12 , further comprising a step of forming an electrode on the surface of the compound semiconductor member, after a step of determining that the compound semiconductor member is nondefective.  
   
   
       20 . A gallium nitride compound semiconductor member wherein in an emission spectrum obtained by measurement of photoluminescence on a surface of the gallium nitride compound semiconductor member, an intensity of a peak at a wavelength corresponding to a bandgap of the gallium nitride compound semiconductor member is not less than twice an intensity of a peak located on a longer wavelength side than the wavelength corresponding to the bandgap.  
   
   
       21 . A gallium nitride compound semiconductor member wherein in an emission spectrum obtained by measurement of photoluminescence on a surface of the gallium nitride compound semiconductor member, an intensity of a peak at a wavelength corresponding to a bandgap of the gallium nitride compound semiconductor member is not less than 1/10 of an intensity of a peak at the wavelength in an emission spectrum obtained by measurement of photoluminescence on a surface of a gallium nitride compound semiconductor member without damage.  
   
   
       22 . The gallium nitride compound semiconductor member according to  claim 20 , wherein the gallium nitride compound semiconductor member is a gallium nitride compound semiconductor substrate.  
   
   
       23 . The gallium nitride compound semiconductor member according to  claim 20 , wherein the gallium nitride compound semiconductor member is a gallium nitride compound semiconductor membrane provided on a substrate.  
   
   
       24 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein in an emission spectrum obtained by measurement of photoluminescence on a surface of the gallium nitride compound semiconductor member, an intensity of a peak at a wavelength corresponding to a bandgap of the gallium nitride compound semiconductor member is not less than twice an intensity of a peak located on a longer wavelength side than the wavelength corresponding to the bandgap.  
   
   
       25 . A gallium nitride compound semiconductor membrane formed on a gallium nitride compound semiconductor member wherein in an emission spectrum obtained by measurement of photoluminescence on a surface of the gallium nitride compound semiconductor member, an intensity of a peak at a wavelength corresponding to a bandgap of the gallium nitride compound semiconductor member is not less than 1/10 of an intensity of a peak at the wavelength in an emission spectrum obtained by measurement of photoluminescence on a surface of a gallium nitride compound semiconductor member without damage.