Assignee
ISHIBASHI KEIJI
JP·15 granted patents·3 pending applications·35 citations·filing 2008–2012
Top patents by PatentIndex Score
18 records- 0190US8771552B2Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2010·Granted Jul 8, 2014·10 cites·9 claims
- 0289US8192543B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2008·Granted Jun 5, 2012·9 cites·3 claims
- 0389US8183669B2Nitride semiconductor wafer having a chamfered edgeISHIBASHI KEIJI·Filed 2011·Granted May 22, 2012·8 cites·5 claims
- 0482US8952494B2Group III nitride semiconductor substrate having a sulfide in a surface layerISHIBASHI KEIJI·Filed 2012·Granted Feb 10, 2015·1 cites·16 claims
- 0575US9105756B2Silicon carbide substrate, semiconductor device, and methods for manufacturing themISHIBASHI KEIJI·Filed 2012·Granted Aug 11, 2015·2 cites·15 claims
- 0673US8471364B2Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrateISHIBASHI KEIJI·Filed 2011·Granted Jun 25, 2013·2 cites·4 claims
- 0765US9708735B2Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2012·Granted Jul 18, 2017·2 cites·12 claims
- 0865US8101523B2Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor deviceISHIBASHI KEIJI·Filed 2010·Granted Jan 24, 2012·1 cites·5 claims
- 0956US8872189B2Substrate, semiconductor device, and method of manufacturing the sameISHIBASHI KEIJI·Filed 2012·Granted Oct 28, 2014·0 cites·12 claims
- 1054US8242498B2Compound semiconductor substrate, semiconductor device, and processes for producing themISHIBASHI KEIJI·Filed 2010·Granted Aug 14, 2012·0 cites·20 claims
- 1153US8101968B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Granted Jan 24, 2012·0 cites·6 claims
- 1252US8871647B2Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrateISHIBASHI KEIJI·Filed 2011·Granted Oct 28, 2014·0 cites·1 claims
- 1352US8853670B2III nitride semiconductor substrate, epitaxial substrate, and semiconductor deviceISHIBASHI KEIJI·Filed 2011·Granted Oct 7, 2014·0 cites·15 claims
- 1451US2012184108A1Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor deviceISHIBASHI KEIJI·Filed 2012·Application pending·0 cites
- 1550US2012094473A1Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Application pending·0 cites
- 1644US8283694B2GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Granted Oct 9, 2012·0 cites·6 claims
- 1742US8841215B2Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing methodISHIBASHI KEIJI·Filed 2012·Granted Sep 23, 2014·0 cites·13 claims
- 1841US2012223417A1Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2012·Application pending·0 cites
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