Inventor · disambiguated record
Akihiro Hachigo
Also filed as: HACHIGO AKIHIRO
48 granted patents·15 pending applications·589 citations·filing 1992–2020
98Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES46HACHIGO AKIHIRO7ISHIBASHI KEIJI3SEIKO EPSON CORP3KASAI HITOSHI1
Top patents by PatentIndex Score
63 records- 0191US9312165B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 12, 2016·9 cites·7 claims
- 0289US5446329ASurface acoustic wave elementSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Aug 29, 1995·52 cites·15 claims
- 0389US5401544AMethod for manufacturing a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Mar 28, 1995·48 cites·9 claims
- 0487US5426340ASurface acoustic wave device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Jun 20, 1995·44 cites·27 claims
- 0586US7901960B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 8, 2011·8 cites·7 claims
- 0686US5343107ASurface acoustic wave element and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Aug 30, 1994·35 cites·3 claims
- 0785US5565724AOrientational material, orientational substrate and surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Oct 15, 1996·38 cites·25 claims
- 0885US5329208ASurface acoustic wave device and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Jul 12, 1994·40 cites·6 claims
- 0984US9136337B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 15, 2015·7 cites·10 claims
- 1084US7728348B2Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 1, 2010·10 cites·6 claims
- 1184US5355568AMethod of making a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Oct 18, 1994·32 cites·2 claims
- 1283US8143140B2Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the sameKASAI HITOSHI·Filed 2010·Granted Mar 27, 2012·7 cites·5 claims
- 1381US10600676B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 24, 2020·2 cites·14 claims
- 1480US5390401AMethod for producing a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Feb 21, 1995·40 cites·3 claims
- 1579US7569493B2Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 4, 2009·5 cites·44 claims
- 1677US5497726AMethod of manufacturing a surface acoustic wave elementSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Mar 12, 1996·23 cites·16 claims
- 1774US9917004B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 13, 2018·2 cites·9 claims
- 1874US8349078B2Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 8, 2013·3 cites·35 claims
- 1973US5294858ASurface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Mar 15, 1994·24 cites·4 claims
- 2072US5320865AMethod of manufacturing a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Jun 14, 1994·23 cites·16 claims
- 2171US7554175B2Gallium nitride substrate, and gallium-nitride-substrate testing and manufacturing methodsSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 30, 2009·3 cites·3 claims
- 2270US10186451B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jan 22, 2019·1 cites·6 claims
- 2370US7960284B2III-V compound semiconductor substrate manufacturing methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Jun 14, 2011·3 cites·6 claims
- 2470US6642813B1Surface acoustic wave device utilizing a ZnO layer and a diamond layerSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Nov 4, 2003·14 cites·8 claims
- 2567US11094537B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 17, 2021·0 cites·15 claims
- 2666US8884306B2Semiconductor device and method for manufacturing the sameKYONO TAKASHI·Filed 2012·Granted Nov 11, 2014·1 cites·2 claims
- 2766US5646468ADiamond-LiTaO3 surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Jul 8, 1997·20 cites·8 claims
- 2865US9312340B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 12, 2016·1 cites·10 claims
- 2965US8124498B2Method of manufacturing group III nitride semiconductor layer bonded substrateHACHIGO AKIHIRO·Filed 2009·Granted Feb 28, 2012·2 cites·5 claims
- 3065US5565725ASurface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Oct 15, 1996·19 cites·17 claims
- 3165US5235236ASurface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Aug 10, 1993·17 cites·12 claims
- 3264US6710513B2Surface acoustic wave device and substrate thereofSEIKO EPSON CORP·Filed 2001·Granted Mar 23, 2004·9 cites·16 claims
- 3361US8183668B2Gallium nitride substrateHACHIGO AKIHIRO·Filed 2010·Granted May 22, 2012·0 cites·9 claims
- 3461US6984918B1Saw deviceSEIKO EPSON CORP·Filed 2000·Granted Jan 10, 2006·8 cites·11 claims
- 3561US2012208355A1Gallium nitride substrateHACHIGO AKIHIRO·Filed 2012·Application pending·0 cites
- 3658US8115927B2Production method of compound semiconductor memberHACHIGO AKIHIRO·Filed 2009·Granted Feb 14, 2012·0 cites·6 claims
- 3758US6337531B1Surface-acoustic-wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Jan 8, 2002·8 cites·9 claims
- 3857US6469416B1Surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Oct 22, 2002·7 cites·5 claims
- 3957US5750243ASurface acoustic wave device and diamond base material for the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted May 12, 1998·10 cites·4 claims
- 4056US8177911B2Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membraneHACHIGO AKIHIRO·Filed 2007·Granted May 15, 2012·0 cites·6 claims
- 4156US2009291567A1Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 4253US8101968B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Granted Jan 24, 2012·0 cites·6 claims
- 4353US2006272573A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 4452US2006281201A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 4550US2012094473A1Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Application pending·0 cites
- 4649US9252207B2Composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Feb 2, 2016·0 cites·7 claims
- 4749US2011272734A1Light-Emitting Device SubstrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 4849US2012100643A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneHACHIGO AKIHIRO·Filed 2012·Application pending·0 cites
- 4947US8664085B2Method of manufacturing composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Mar 4, 2014·0 cites·6 claims
- 5046US2008296584A1III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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