US2012208355A1PendingUtilityA1
Gallium nitride substrate
Est. expirySep 30, 2029(~3.2 yrs left)· nominal 20-yr term from priority
Inventors:Akihiro Hachigo
C30B 33/00C30B 29/406
61
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Claims
Abstract
A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m 3/2 .
Claims
exact text as granted — not AI-modified1 - 12 . (canceled)
13 . A method of making a gallium nitride substrate, comprising a step of slicing a gallium nitride ingot at a tilt angle in a range of 20 to 160 degrees with respect to a C-plane of the ingot,
wherein the substrate has a fracture toughness of more than or equal to 1.36 MN/m 3/2 .
14 . The method of making a gallium nitride substrate according to claim 13 , wherein a cut surface of the substrate is tilted in the [1-100] direction of the substrate.
15 . The method of making a gallium nitride substrate according to claim 13 , wherein a cut surface of the substrate is tilted in the [11-20] direction of the substrate.
16 . The method of making a gallium nitride substrate according to claim 13 , wherein the tilt angle is in a range of 71 to 79 degrees.Join the waitlist — get patent alerts
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