Inventor · disambiguated record
Woo-Hyeong Lee
Also filed as: LEE WOO-HYEONG
16 granted patents·3 pending applications·853 citations·filing 1998–2015
93Inventor score
Top patents by PatentIndex Score
19 records- 0198US7682887B2Transistor having high mobility channel and methodsIBM·Filed 2006·Granted Mar 23, 2010·152 cites·13 claims
- 0297US5923056AElectronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materialsLUCENT TECHNOLOGIES INC·Filed 1998·Granted Jul 13, 1999·504 cites·10 claims
- 0396US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 0493US7439110B2Strained HOT (hybrid orientation technology) MOSFETsIBM·Filed 2006·Granted Oct 21, 2008·20 cites·15 claims
- 0583US7056782B2CMOS silicide metal gate integrationIBM·Filed 2004·Granted Jun 6, 2006·25 cites·19 claims
- 0681US7411227B2CMOS silicide metal gate integrationIBM·Filed 2006·Granted Aug 12, 2008·7 cites·16 claims
- 0779US7514370B2Compressive nitride film and method of manufacturing thereofIBM·Filed 2006·Granted Apr 7, 2009·6 cites·5 claims
- 0874US7655557B2CMOS silicide metal gate integrationIBM·Filed 2008·Granted Feb 2, 2010·4 cites·9 claims
- 0968US7674720B2Stacking fault reduction in epitaxially grown siliconIBM·Filed 2008·Granted Mar 9, 2010·2 cites·15 claims
- 1066US9171758B2Method of forming transistor contactsIBM·Filed 2014·Granted Oct 27, 2015·2 cites·20 claims
- 1164US7119016B2Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletionAPPLIED MATERIALS INC·Filed 2003·Granted Oct 10, 2006·10 cites·5 claims
- 1257US7790581B2Semiconductor substrate with multiple crystallographic orientationsIBM·Filed 2006·Granted Sep 7, 2010·1 cites·18 claims
- 1355US7851376B2Compressive nitride film and method of manufacturing thereofIBM·Filed 2009·Granted Dec 14, 2010·0 cites·18 claims
- 1454US2008224216A1STRAINED HOT (HYBRID OREINTATION TECHNOLOGY) MOSFETsCHENG KANGGUO·Filed 2008·Application pending·0 cites
- 1552US7893493B2Stacking fault reduction in epitaxially grown siliconIBM·Filed 2006·Granted Feb 22, 2011·0 cites·7 claims
- 1647US2006166417A1Transistor having high mobility channel and methodsIBM·Filed 2005·Application pending·0 cites
- 1746US7776624B2Method for improving semiconductor surfacesIBM·Filed 2008·Granted Aug 17, 2010·0 cites·9 claims
- 1838US7232774B2Polycrystalline silicon layer with nano-grain structure and method of manufactureIBM·Filed 2004·Granted Jun 19, 2007·0 cites·9 claims
- 1932US2017170016A1Multiple patterning method for substrateGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →