Inventor · disambiguated record
Jeong-Dong Choe
Also filed as: CHOE JEONG-DONG
43 granted patents·18 pending applications·723 citations·filing 1999–2012
98Inventor score
Top patents by PatentIndex Score
61 records- 0197US7670912B2Methods of fabricating multichannel metal oxide semiconductor (MOS) transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 2, 2010·172 cites·18 claims
- 0297US7332386B2Methods of fabricating fin field transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·56 cites·16 claims
- 0396US8466511B2Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the sameOH CHANG-WOO·Filed 2009·Granted Jun 18, 2013·31 cites·20 claims
- 0496US7615429B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 10, 2009·39 cites·20 claims
- 0595US7002207B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·74 cites·34 claims
- 0694US7026688B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 11, 2006·22 cites·17 claims
- 0792US7148527B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 12, 2006·54 cites·19 claims
- 0888US7397131B2Self-aligned semiconductor contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·12 cites·17 claims
- 0988US7247896B2Semiconductor devices having a field effect transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·25 cites·15 claims
- 1086US7132349B2Methods of forming integrated circuits structures including epitaxial silicon layers in active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 7, 2006·9 cites·13 claims
- 1185US7473963B2Metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 6, 2009·8 cites·16 claims
- 1285US7285466B2Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 23, 2007·28 cites·31 claims
- 1385US7071517B2Self-aligned semiconductor contact structures and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 4, 2006·28 cites·12 claims
- 1484US7381601B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 3, 2008·24 cites·38 claims
- 1578US8059469B2Semiconductor device including driving transistorsLEE SE-HOON·Filed 2009·Granted Nov 15, 2011·8 cites·25 claims
- 1678US7122431B2Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·20 cites·18 claims
- 1775US6940129B2Double gate MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 6, 2005·20 cites·20 claims
- 1874US7541656B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·12 claims
- 1974US7015549B2Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 21, 2006·13 cites·9 claims
- 2072US7575964B2Semiconductor device employing buried insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·4 cites·12 claims
- 2172US7541645B2Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·9 claims
- 2271US8426272B2Non-volatile memory devices including shared bit lines and methods of fabricating the sameYOON YOUNG-BAE·Filed 2012·Granted Apr 23, 2013·3 cites·15 claims
- 2371US7883969B2Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·2 cites·18 claims
- 2470US8049269B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 1, 2011·4 cites·32 claims
- 2569US8652928B2Method of manufacturing a semiconductor deviceYOON YOUNG-BAE·Filed 2011·Granted Feb 18, 2014·2 cites·16 claims
- 2669US7510932B2Semiconductor devices having a field effect transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·8 cites·19 claims
- 2767US7265031B2Methods of fabricating semiconductor-on-insulator (SOI) substrates and semiconductor devices using sacrificial layers and void spacesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 4, 2007·10 cites·41 claims
- 2863US8460508B2Synchronous pulse plasma etching equipment and method of fabricating a semiconductor deviceTOKASHIKI KEN·Filed 2009·Granted Jun 11, 2013·1 cites·19 claims
- 2962US7902024B2Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systemsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·2 cites·14 claims
- 3061US7154154B2MOS transistors having inverted T-shaped gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 26, 2006·8 cites·11 claims
- 3160US8039905B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·1 cites·18 claims
- 3259US7265011B2Method of manufacturing a transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 4, 2007·6 cites·51 claims
- 3359US6951785B2Methods of forming field effect transistors including raised source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 4, 2005·6 cites·27 claims
- 3458US7321144B2Semiconductor device employing buried insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 22, 2008·6 cites·12 claims
- 3554US7871914B2Methods of fabricating semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·0 cites·13 claims
- 3653US8035152B2Semiconductor device having shared bit line structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·0 cites·14 claims
- 3753US2009302472A1Non-volatile memory devices including shared bit lines and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3852US2007184611A1Semiconductor device having two different operation modes employing an asymmetrical buried insulating layer and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3951US2008145989A1SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSISTOR (PiFET) AND METHOD OF FABRICATING THE SAMESAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4051US2007257312A1Semiconductor-on-insulator (soi) substrates and semiconductor devices using void spacesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4150US2005186742A1Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the sameFiled 2005·Application pending·0 cites
- 4250US2007210368A1Gate structure and method of forming the gate structure, semiconductor device having the gate structure and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4349US7361956B2Semiconductor device having partially insulated field effect transistor (PiFET) and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 22, 2008·2 cites·16 claims
- 4449US2011079831A1Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel RegionsOH CHANG-WOO·Filed 2010·Application pending·0 cites
- 4548US7214987B2Semiconductor device having two different operation modes employing an asymmetrical buried insulating layer and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·1 cites·24 claims
- 4647US7534707B2MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·0 cites·25 claims
- 4747US2010127328A1Semiconductor-on-insulator (soi) devices using void spacesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4846US2006170062A1Self-aligned semiconductor contact structures and methods for fabricating the sameKIM SEONG-HO·Filed 2006·Application pending·0 cites
- 4945US8330205B2Nonvolatile semiconductor device including a floating gate and associated systemsLEE SE-HOON·Filed 2011·Granted Dec 11, 2012·0 cites·16 claims
- 5044US2004212024A1Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the sameFiled 2004·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →