Inventor · disambiguated record
William Harshbarger
Also filed as: HARSHBARGER WILLIAM · HARSHBARGER WILLIAM R · HARSHBARGER WILLIAM REID
31 granted patents·10 pending applications·2,045 citations·filing 1978–2007
98Inventor score
Files withAPPLIED MATERIALS INC29LAM RES CORP4APPLIED KOMATSU TECHNOLOGY INC2BELL TELEPHONE LABOR INC2
Top patents by PatentIndex Score
41 records- 0199US6825134B2Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flowAPPLIED MATERIALS INC·Filed 2002·Granted Nov 30, 2004·595 cites·33 claims
- 0298US6432255B1Method and apparatus for enhancing chamber cleaningAPPLIED MATERIALS INC·Filed 2000·Granted Aug 13, 2002·436 cites·12 claims
- 0398US5846373AMethod for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamberLAM RES CORP·Filed 1996·Granted Dec 8, 1998·221 cites·18 claims
- 0497US5647953APlasma cleaning method for removing residues in a plasma process chamberLAM RES CORP·Filed 1995·Granted Jul 15, 1997·189 cites·23 claims
- 0594US6500356B2Selectively etching silicon using fluorine without plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Dec 31, 2002·67 cites·10 claims
- 0691US6676761B2Method and apparatus for dechucking a substrateAPPLIED MATERIALS INC·Filed 2002·Granted Jan 13, 2004·45 cites·29 claims
- 0791US6200651B1Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave sourceLAM RES CORP·Filed 1997·Granted Mar 13, 2001·74 cites·46 claims
- 0888US7160392B2Method for dechucking a substrateAPPLIED MATERIALS INC·Filed 2003·Granted Jan 9, 2007·33 cites·8 claims
- 0988US6451390B1Deposition of TEOS oxide using pulsed RF plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·27 cites·5 claims
- 1088US4208241ADevice fabrication by plasma etchingBELL TELEPHONE LABOR INC·Filed 1978·Granted Jun 17, 1980·59 cites·26 claims
- 1185US6869838B2Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applicationsAPPLIED MATERIALS INC·Filed 2002·Granted Mar 22, 2005·35 cites·14 claims
- 1282US6880561B2Fluorine process for cleaning semiconductor process chamberAPPLIED MATERIALS INC·Filed 2003·Granted Apr 19, 2005·23 cites·12 claims
- 1381US7086918B2Low temperature process for passivation applicationsAPPLIED MATERIALS INC·Filed 2002·Granted Aug 8, 2006·34 cites·29 claims
- 1476US7915114B2Low temperature process for TFT fabricationAPPLIED MATERIALS INC·Filed 2007·Granted Mar 29, 2011·6 cites·22 claims
- 1576US5911833AMethod of in-situ cleaning of a chuck within a plasma chamberLAM RES CORP·Filed 1997·Granted Jun 15, 1999·49 cites·17 claims
- 1674US7439191B2Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applicationsAPPLIED MATERIALS INC·Filed 2002·Granted Oct 21, 2008·18 cites·72 claims
- 1773US8002896B2Shadow frame with cross beam for semiconductor equipmentAPPLIED MATERIALS INC·Filed 2005·Granted Aug 23, 2011·1 cites·12 claims
- 1873US6962732B2Process for controlling thin film uniformity and products produced therebyAPPLIED MATERIALS INC·Filed 2001·Granted Nov 8, 2005·10 cites·39 claims
- 1973US6960263B2Shadow frame with cross beam for semiconductor equipmentAPPLIED MATERIALS INC·Filed 2002·Granted Nov 1, 2005·10 cites·14 claims
- 2068US6610374B2Method of annealing large area glass substratesAPPLIED MATERIALS INC·Filed 2001·Granted Aug 26, 2003·11 cites·14 claims
- 2168US6610354B2Plasma display panel with a low k dielectric layerAPPLIED MATERIALS INC·Filed 2001·Granted Aug 26, 2003·6 cites·37 claims
- 2265US6863077B2Method and apparatus for enhanced chamber cleaningAPPLIED MATERIALS INC·Filed 2002·Granted Mar 8, 2005·8 cites·8 claims
- 2365US6843258B2On-site cleaning gas generation for process chamber cleaningAPPLIED MATERIALS INC·Filed 2000·Granted Jan 18, 2005·17 cites·20 claims
- 2461US4181564AFabrication of patterned silicon nitride insulating layers having gently sloping sidewallsBELL TELEPHONE LABOR INC·Filed 1978·Granted Jan 1, 1980·21 cites·12 claims
- 2558US6858548B2Application of carbon doped silicon oxide film to flat panel industryAPPLIED MATERIALS INC·Filed 2002·Granted Feb 22, 2005·7 cites·28 claims
- 2656US2005233155A1Process for controlling thin film uniformity and products produced therebyAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2755US7300829B2Low temperature process for TFT fabricationAPPLIED MATERIALS INC·Filed 2003·Granted Nov 27, 2007·6 cites·30 claims
- 2855US7122962B2Plasma display panel with a low K dielectric layerAPPLIED MATERIALS INC·Filed 2003·Granted Oct 17, 2006·2 cites·32 claims
- 2954US6827987B2Method of reducing an electrostatic charge on a substrate during a PECVD processAPPLIED MATERIALS INC·Filed 2001·Granted Dec 7, 2004·1 cites·29 claims
- 3054US6294219B1Method of annealing large area glass substratesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1998·Granted Sep 25, 2001·17 cites·7 claims
- 3152US2007062454A1Method for dechucking a substrateAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3247US6352910B1Method of depositing amorphous silicon based films having controlled conductivityAPPLIED KOMATSU TECHNOLOGY INC·Filed 1999·Granted Mar 5, 2002·13 cites·61 claims
- 3345US2002192475A1Deposition of TEOS oxide using pulsed RF plasmaFiled 2002·Application pending·0 cites
- 3444US6981508B2On-site cleaning gas generation for process chamber cleaningAPPLIED MATERIALS INC·Filed 2004·Granted Jan 3, 2006·4 cites·26 claims
- 3541US2003066541A1Method and apparatus for enhanced chamber cleaningFiled 2002·Application pending·0 cites
- 3641US2003109144A1Selectively etching silicon using fluorine without plasmaAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3740US2003010354A1Fluorine process for cleaning semiconductor process chamberAPPLIED MATERIALS INC·Filed 2000·Application pending·0 cites
- 3839US2002115269A1Method of depositing amorphous silicon based films having controlled conductivityAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3938US2003194825A1Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applicationsFiled 2002·Application pending·0 cites
- 4036US2003203123A1System and method for metal induced crystallization of polycrystalline thin film transistorsAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4130US2002033183A1Method and apparatus for enhanced chamber cleaningFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →