Process for controlling thin film uniformity and products produced thereby

Abstract

Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

1 . A method of controlling the temperature of a susceptor for supporting a substrate within a process chamber, comprising the steps of: 
 providing a susceptor within a process chamber;    coupling a first heating element to a first portion of the susceptor;    coupling a second heating element to a second portion of the susceptor that is radially inward of the first portion;    providing first and second thermocouples, wherein each thermocouple produces a temperature reading;    coupling the first thermocouple to a third portion of the susceptor between the first portion and the second portion;    coupling the second thermocouple to a central portion of the susceptor that is radially inward of the third portion; and    controlling the first and second heating elements in response to the temperature readings of the first and second thermocouples.    
   
   
       2 . The method of  claim 1 , wherein the first portion of the susceptor is adjacent the perimeter of the susceptor.  
   
   
       3 . The method of  claim 1 , wherein the controlling step comprises controlling the first and second heating elements so that the temperature reading of the first thermocouple is higher than the temperature reading of the second thermocouple.  
   
   
       4 . The method of  claim 1 , wherein the controlling step comprises controlling the first and second heating elements so that the temperature reading of the first thermocouple is at least 10 degrees C. higher than the temperature reading of the second thermocouple.  
   
   
       5 . The method of  claim 1 , wherein the controlling step comprises controlling the first and second heating elements so that the temperature reading of the first thermocouple is in the range of 10 to 20 degrees C. higher than the temperature reading of the second thermocouple.  
   
   
       6 . The method of  claim 1 , further comprising, concurrently with the controlling step, the steps of: 
 supporting a substrate on the susceptor; and    supplying a precursor material into the process chamber so as to deposit a film on the substrate.    
   
   
       7 . The method of  claim 6 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount great enough so that said film deposited on the substrate has a uniformity of thickness less than or equal to 6.7 percent.    
   
   
       8 . The method of  claim 6 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount that improves the uniformity of the thickness of said film relative to the uniformity of the thickness of a film that would be produced if the temperature readings of the first and second thermocouples were equal.    
   
   
       9 . The method of  claim 1 , wherein the susceptor is large enough to support within the chamber a substrate having dimensions of at least 550 mm×650 mm.  
   
   
       10 . A method of depositing a film on a substrate, comprising the concurrent steps of: 
 providing a susceptor within a process chamber;    providing first and second heating elements respectively positioned so as to heat first and second portions of the susceptor, wherein the first portion of the susceptor is radially outward of the second portion of the susceptor;    providing first and second thermocouples respectively coupled to the first and second portions of the susceptor, wherein each thermocouple produces a temperature reading;    supporting a substrate on the susceptor;    supplying a precursor material into the process chamber so as to deposit a film on the substrate; and    controlling the first and second heating elements so that the temperature reading of the first thermocouple is at least 10 degrees C. higher than the temperature reading of the second thermocouple.    
   
   
       11 . The method of  claim 10 , wherein the first portion of the susceptor is adjacent the perimeter of the susceptor.  
   
   
       12 . The method of  claim 10 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple is in the range of 10 to 20 degrees C. higher than the temperature reading of the second thermocouple.    
   
   
       13 . The method of  claim 10 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount great enough so that said film deposited on the substrate has a uniformity of thickness less than or equal to 6.7 percent.    
   
   
       14 . The method of  claim 10 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount great enough so that said film deposited on the substrate has a uniformity of thickness that is better than the uniformity of the thickness of a film that would be produced if the temperature readings of the first and second thermocouples were equal.    
   
   
       15 . A method of depositing a film on a substrate, comprising the concurrent steps of: 
 providing a susceptor within a process chamber;    providing first and second heating elements respectively positioned so as to heat first and second portions of the susceptor, wherein the first portion of the susceptor is radially outward of the second portion of the susceptor;    providing first and second thermocouples respectively coupled to the first and second portions of the susceptor, wherein each thermocouple produces a temperature reading;    supporting a substrate on the susceptor;    supplying a precursor material into the process chamber so as to deposit a film on the substrate; and    controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount great enough so that said film deposited on the substrate has a uniformity of thickness less than or equal to 6.7 percent.    
   
   
       16 . The method of  claim 15 , wherein the first portion of the susceptor is adjacent the perimeter of the susceptor.  
   
   
       17 . The method of  claim 15 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple is at least 10 degrees C. higher than the temperature reading of the second thermocouple.    
   
   
       18 . The method of  claim 15 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple is in the range of 10 to 20 degrees C. higher than the temperature reading of the second thermocouple.    
   
   
       19 . A substrate having a film formed thereon by the concurrent steps of: 
 providing a susceptor within a process chamber;    providing first and second heating elements respectively positioned so as to heat first and second portions of the susceptor, wherein the first portion of the susceptor is radially outward of the second portion of the susceptor;    providing first and second thermocouples respectively coupled to the first and second portions of the susceptor, wherein each thermocouple produces a temperature reading; and    supporting a substrate on the susceptor;    supplying a precursor material into the process chamber so as to form a film on the substrate; and    controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount great enough so that said film deposited on the substrate has a uniformity of thickness that is better than the uniformity of the thickness of a film that would be produced if the temperature readings of the first and second thermocouples were equal.    
   
   
       20 . The method of  claim 19 , wherein the first portion of the susceptor is adjacent the perimeter of the susceptor.  
   
   
       21 . The substrate of  claim 19 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple exceeds the temperature reading of the second thermocouple by an amount great enough so that said film deposited on the substrate has a uniformity of thickness less than or equal to 6.7 percent.    
   
   
       22 . The substrate of  claim 19 , wherein the controlling step comprises: 
 controlling the first and second heating elements so that the temperature reading of the first thermocouple is at least 10 degrees C. higher than the temperature reading of the second thermocouple.    
   
   
       23 . The substrate of  claim 19 , wherein the precursor material includes TEOS.  
   
   
       24 . The substrate of  claim 19 , wherein the precursor material includes an organosilicate material.