Assignee
FORBES LEONARD
US·43 granted patents·7 pending applications·217 citations·filing 2005–2014
Top patents by PatentIndex Score
50 records- 0197US8227305B2Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit linesFORBES LEONARD·Filed 2011·Granted Jul 24, 2012·26 cites·20 claims
- 0293US8212250B2Backside texturing by cusps to improve IR response of silicon solar cells and photodetectorsFORBES LEONARD·Filed 2011·Granted Jul 3, 2012·8 cites·25 claims
- 0393US8114763B2Tantalum aluminum oxynitride high-K dielectricFORBES LEONARD·Filed 2010·Granted Feb 14, 2012·9 cites·14 claims
- 0493US8115243B2Surround gate access transistors with grown ultra-thin bodiesFORBES LEONARD·Filed 2011·Granted Feb 14, 2012·11 cites·7 claims
- 0592US7479428B2NROM flash memory with a high-permittivity gate dielectricFORBES LEONARD·Filed 2005·Granted Jan 20, 2009·18 cites·6 claims
- 0691US8120027B2Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectorsFORBES LEONARD·Filed 2010·Granted Feb 21, 2012·6 cites·19 claims
- 0790US8183625B2NROM flash memory devices on ultrathin siliconFORBES LEONARD·Filed 2011·Granted May 22, 2012·6 cites·17 claims
- 0890US8134197B2Nanowire transistor with surrounding gateFORBES LEONARD·Filed 2008·Granted Mar 13, 2012·12 cites·26 claims
- 0990US8084370B2Hafnium tantalum oxynitride dielectricFORBES LEONARD·Filed 2009·Granted Dec 27, 2011·10 cites·25 claims
- 1089US8637362B2Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit linesFORBES LEONARD·Filed 2012·Granted Jan 28, 2014·7 cites·20 claims
- 1187US8258816B2Integrated circuit comparator or amplifierFORBES LEONARD·Filed 2010·Granted Sep 4, 2012·7 cites·19 claims
- 1286US8119484B2DRAM with nanofin transistorsFORBES LEONARD·Filed 2009·Granted Feb 21, 2012·7 cites·21 claims
- 1385US8557672B2Dielectrics containing at least one of a refractory metal or a non-refractory metalFORBES LEONARD·Filed 2012·Granted Oct 15, 2013·4 cites·21 claims
- 1485US8228725B2Memory utilizing oxide nanolaminatesFORBES LEONARD·Filed 2010·Granted Jul 24, 2012·5 cites·18 claims
- 1584US8519466B2Tantalum silicon oxynitride high-K dielectrics and metal gatesFORBES LEONARD·Filed 2012·Granted Aug 27, 2013·4 cites·16 claims
- 1684US8513102B2Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensorsFORBES LEONARD·Filed 2011·Granted Aug 20, 2013·7 cites·20 claims
- 1784US8062949B2Nanowire transistor with surrounding gateFORBES LEONARD·Filed 2008·Granted Nov 22, 2011·7 cites·25 claims
- 1881US9087730B2DRAM with nanofin transistorsFORBES LEONARD·Filed 2012·Granted Jul 21, 2015·3 cites·14 claims
- 1981US8227309B2Localized compressive strained semiconductorFORBES LEONARD·Filed 2012·Granted Jul 24, 2012·3 cites·20 claims
- 2080US8962447B2Bonded strained semiconductor with a desired surface orientation and conductance directionFORBES LEONARD·Filed 2006·Granted Feb 24, 2015·7 cites·57 claims
- 2180US8076200B2Charge trapping dielectric structures with variable band-gapsFORBES LEONARD·Filed 2006·Granted Dec 13, 2011·6 cites·20 claims
- 2278US8803229B2Nanowire transistor with surrounding gateFORBES LEONARD·Filed 2012·Granted Aug 12, 2014·3 cites·21 claims
- 2378US8304818B2Dram arrays, vertical transistor structures, and methods of forming transistor structures and dram arraysFORBES LEONARD·Filed 2010·Granted Nov 6, 2012·3 cites·6 claims
- 2478US8188533B2Write once read only memory employing charge trapping in insulatorsFORBES LEONARD·Filed 2009·Granted May 29, 2012·4 cites·16 claims
- 2578US8076714B2Memory device with high dielectric constant gate dielectrics and metal floating gatesFORBES LEONARD·Filed 2009·Granted Dec 13, 2011·4 cites·18 claims
- 2676US8466016B2Hafnium tantalum oxynitride dielectricFORBES LEONARD·Filed 2011·Granted Jun 18, 2013·2 cites·19 claims
- 2776US8435850B2Localized compressive strained semiconductorFORBES LEONARD·Filed 2012·Granted May 7, 2013·2 cites·20 claims
- 2876US8124977B2Localized compressive strained semiconductorFORBES LEONARD·Filed 2009·Granted Feb 28, 2012·3 cites·19 claims
- 2975US8101992B2Memory array with surrounding gate access transistors and capacitors with global and staggered local bit linesFORBES LEONARD·Filed 2010·Granted Jan 24, 2012·3 cites·17 claims
- 3075US7728607B2Electrical probeFORBES LEONARD·Filed 2007·Granted Jun 1, 2010·6 cites·22 claims
- 3174US8470687B2Strained semiconductor by full wafer bondingFORBES LEONARD·Filed 2011·Granted Jun 25, 2013·2 cites·35 claims
- 3273US8461002B2Vertical transistor, memory cell, device, system and method of forming sameFORBES LEONARD·Filed 2010·Granted Jun 11, 2013·3 cites·20 claims
- 3372US7924040B2Electrical probe having a conductive whiskerFORBES LEONARD·Filed 2010·Granted Apr 12, 2011·2 cites·20 claims
- 3471US2014306307A1Backside nanoscale texturing to improve ir response of silicon solar cells and photodetectorsFORBES LEONARD·Filed 2014·Application pending·0 cites
- 3568US8168502B2Tantalum silicon oxynitride high-K dielectrics and metal gatesFORBES LEONARD·Filed 2010·Granted May 1, 2012·1 cites·31 claims
- 3666US8686489B2Memory with metal-insulator-metal tunneling program and eraseFORBES LEONARD·Filed 2006·Granted Apr 1, 2014·2 cites·19 claims
- 3766US8174081B2Fully depleted silicon-on-insulator CMOS logicFORBES LEONARD·Filed 2011·Granted May 8, 2012·1 cites·20 claims
- 3865US2012080676A1Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectorsFORBES LEONARD·Filed 2011·Application pending·0 cites
- 3965US2012292619A1Backside texturing by cusps to improve ir response of silicon solar cells and photodetectorsFORBES LEONARD·Filed 2012·Application pending·0 cites
- 4064US8866210B2Charge trapping dielectric structuresFORBES LEONARD·Filed 2011·Granted Oct 21, 2014·1 cites·13 claims
- 4164US8734583B2Grown nanofin transistorsFORBES LEONARD·Filed 2006·Granted May 27, 2014·2 cites·20 claims
- 4259US8467639B2Zinc oxide diodes for optical interconnectionsFORBES LEONARD·Filed 2011·Granted Jun 18, 2013·0 cites·19 claims
- 4356US2009137067A1Method for forming an inductorFORBES LEONARD·Filed 2009·Application pending·0 cites
- 4455US8786006B2Flash memory device having a graded composition, high dielectric constant gate insulatorFORBES LEONARD·Filed 2012·Granted Jul 22, 2014·0 cites·21 claims
- 4554US2008258245A1Semiconductor Constructions and Transistor GatesFORBES LEONARD·Filed 2008·Application pending·0 cites
- 4653US8294196B2Erasable non-volatile memory device using hole trapping in high-K dielectricsFORBES LEONARD·Filed 2009·Granted Oct 23, 2012·0 cites·36 claims
- 4752US8258518B2Flash memory device having a graded composition, high dielectric constant gate insulatorFORBES LEONARD·Filed 2011·Granted Sep 4, 2012·0 cites·13 claims
- 4845US8330202B2Germanium-silicon-carbide floating gates in memoriesFORBES LEONARD·Filed 2005·Granted Dec 11, 2012·0 cites·25 claims
- 4944US2006290436A1Apparatus for providing clock signals at different locations with minimal clock skewFORBES LEONARD·Filed 2006·Application pending·0 cites
- 5042US2006193161A1Processes for turning a SRAM cell off and processess for writing a SRAM cellFORBES LEONARD·Filed 2006·Application pending·0 cites
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