US8168502B2ActiveUtilityA1

Tantalum silicon oxynitride high-K dielectrics and metal gates

Assignee: FORBES LEONARDPriority: Aug 31, 2006Filed: Aug 12, 2010Granted: May 1, 2012

Est. expiryAug 31, 2026(~0.1 yrs left)· nominal 20-yr term from priority

Inventors:Leonard Forbes Kie Y. Ahn Arup Bhattacharyya

H10P 14/6532H10P 14/6339H10P 14/6322H10P 14/6304H10P 14/6526H10D 64/01316H10P 14/6931H10D 64/035H10D 1/68H10D 64/691H10D 64/685H10D 64/017H10D 64/015C23C 16/308

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References

Claims

Abstract

Electronic apparatus and methods of forming the electronic apparatus include a tantalum silicon oxynitride film on a substrate for use in a variety of electronic systems. The tantalum silicon oxynitride film may be structured as one or more monolayers. The tantalum silicon oxynitride film may be formed using a monolayer or partial monolayer sequencing process. Metal electrodes may be disposed on a dielectric containing a tantalum silicon oxynitride film.

Claims

exact text as granted — not AI-modified

1. A method comprising:
forming a dielectric including TaSiON, the TaSiON formed using a monolayer or partial monolayer sequencing process, wherein forming the TaSiON includes nitridizing TaSiO after forming the TaSiO using the monolayer or partial monolayer sequencing process or annealing TaON with SiO and SiN after forming the TaON, the SiO, and the SiN using the monolayer or partial monolayer sequencing process; and
forming a metal on and contacting the dielectric.

2. The method of claim 1 , wherein forming a metal on and contacting the dielectric includes forming a self aligned metal electrode on and contacting the dielectric using a previously disposed sacrificial carbon on the dielectric and sacrificial carbon sidewall spacers adjacent to the sacrificial carbon.

3. The method of claim 1 , wherein forming a metal on and contacting the dielectric includes forming a substitutable material on the dielectric and substituting a desired metal material for the substitutable material to provide the metal on the dielectric.

4. The method of claim 3 , wherein forming a substitutable material includes forming a structure having one of more materials of a group consisting of carbon, polysilicon, germanium, and silicon-germanium.

5. The method of claim 3 , wherein substituting a desired metal material for the substitutable material includes substituting for the carbon structure one or more materials from the group consisting of aluminum, gold, silver, a gold alloy, a silver alloy, copper, platinum, rhenium, ruthenium, rhodium, nickel, osmium, palladium, iridium, and cobalt.

6. A method comprising:
forming a dielectric on a substrate, the dielectric including TaSiON, the TaSiON formed using a monolayer or partial monolayer sequencing process including:
forming TaSiO using the monolayer or partial monolayer sequencing process; an
nitridizing the TaSiO to form TaSiON; and

forming a metal on and contacting the dielectric.

7. The method of claim 6 , wherein forming the TaSiO includes:
forming tantalum oxide by the monolayer or partial monolayer sequencing process;
forming silicon oxide by the monolayer or partial monolayer sequencing process; and
annealing the silicon oxide with the tantalum oxide to form TaSiO.

8. The method of claim 7 , wherein forming the tantalum oxide includes forming a region of tantalum using Ta(OC 2 H 5 ) 5 as a precursor.

9. The method of claim 7 , wherein forming tantalum oxide includes forming a region of tantalum using TaCl 5 as a precursor.

10. The method of claim 7 , wherein the tantalum oxide is formed as Ta 2 O 5 .

11. The method of claim 7 , wherein the tantalum oxide is formed at a temperature range of 250-325 degrees Celsius.

12. The method of claim 7 , wherein forming the silicon oxide includes forming a region of silicon using a silicon halide precursor.

13. The method of claim 12 , wherein the silicon halide precursor is SiCl 4 .

14. The method of claim 12 , wherein the silicon halide precursor is SiI 4 .

15. The method of claim 6 , wherein nitridizing the TaSiO to form TaSiON includes nitridizing at high temperatures.

16. The method of claim 15 , wherein nitridizing at high temperatures includes nitridizing at temperatures equal to or above 500 degrees Celsius.

17. The method of claim 6 , wherein nitridizing the TaSiO to form TaSiON includes introducing nitrogen by a microwave plasma.

18. The method of claim 6 , wherein nitridizing the TaSiO to form TaSiON includes introducing nitrogen by a NH 3 anneal.

19. A method comprising:
forming a dielectric on a substrate, the dielectric including TaSiON, the TaSiON formed using a monolayer or partial monolayer sequencing process including:
forming TaON by the monolayer or partial monolayer sequencing process;
forming SiO by the monolayer or partial monolayer sequencing process;
forming SiN by the monolayer or partial monolayer sequencing process;
annealing the TaON with the SiO and the SiN to form TaSiON; and

forming a metal on and contacting the dielectric.

20. The method of claim 19 , wherein the method includes forming alternating regions of TaON and SiO and SiN prior to annealing.

21. The method of claim 19 , wherein forming the TaON by the monolayer or partial monolayer sequencing process includes:
forming a region of tantalum, using a tantalum precursor;
pulsing a nitrogen reactant precursor; and
pulsing an oxygen reactant precursor.

22. The method of claim 19 , wherein the tantalum precursor is Ta(OC 2 H 5 ) 5 .

23. The method of claim 19 , wherein the tantalum precursor is TaCl 5 .

24. A method comprising:
forming an array of memory cells on a substrate, each memory cell including a dielectric having TaSiON, wherein forming each memory cell includes:
forming the TaSiON using a monolayer or partial monolayer sequencing process, wherein forming the TaSiON includes nitridizing TaSiO after forming the TaSiO using the monolayer or partial monolayer sequencing process or annealing TaON with SiO and SiN after forming the TaON, the SiO, and the SiN using the monolayer or partial monolayer sequencing process; and
forming a metal electrode on and contacting the dielectric.

25. The method of claim 24 , wherein the method includes:
forming TaSiO using the monolayer or partial monolayer sequencing process; and
nitridizing the TaSiO to form TaSiON.

26. The method of claim 24 , wherein the method includes:
forming TaON by the monolayer or partial monolayer sequencing process;
forming SiO by the monolayer or partial monolayer sequencing process;
forming SiN by the monolayer or partial monolayer sequencing process; and
annealing the TaON with the SiO and the SiN to form TaSiON.

27. A method comprising:
providing a controller; and
coupling a transistor to the controller, the transistor having a metal gate disposed on a dielectric on a substrate for an integrated circuit, the dielectric having TaSiON, the TaSiON formed using a monolayer or partial monolayer sequencing process, wherein forming the TaSiON includes nitridizing TaSiO after forming the TaSiO using the monolayer or partial monolayer sequencing process or annealing TaON with SiO and SiN after forming the TaON, the SiO, and the SiN using the monolayer or partial monolayer sequencing process.

28. The method of claim 27 , wherein forming the TaSiON using the monolayer or partial monolayer sequencing process includes:
forming tantalum oxide by the monolayer or partial monolayer sequencing process;
forming silicon oxide by the monolayer or partial monolayer sequencing process;
annealing the tantalum oxide with the silicon oxide to form TaSiO; and
nitridizing the TaSiO to form TaSiON.

29. The method of claim 27 , wherein forming the TaSiON using the monolayer or partial monolayer sequencing process includes:
forming TaON by the monolayer or partial monolayer sequencing process;
forming SiO by the monolayer or partial monolayer sequencing process;
forming SiN by the monolayer or partial monolayer sequencing process; and
annealing the TaON with the SiO and the SiN to form TaSiON.

30. The method of claim 27 , wherein the metal gate is formed by substituting a desired metal material for previously disposed substitutable material.

31. The method of claim 27 , wherein the metal gate is formed by forming a self aligned metal gate on and contacting the dielectric using a previously disposed sacrificial carbon gate on the dielectric and sacrificial carbon sidewall spacers adjacent to the sacrificial carbon gate.

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