Inventor · disambiguated record
Holger Jurgensen
Also filed as: JUERGENSEN HOLGER · JURGENSEN HOLGER
25 granted patents·6 pending applications·706 citations·filing 1987–2006
97Inventor score
Top patents by PatentIndex Score
31 records- 0193US5441703AGas inlet for a plurality of reactant gases into reaction vesselAIXTRON GMBH·Filed 1994·Granted Aug 15, 1995·170 cites·2 claims
- 0289US7033921B2Method and device for depositing crystalline layers on crystalline substratesAIXTRON AG·Filed 2004·Granted Apr 25, 2006·31 cites·11 claims
- 0387US7147718B2Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substratesAIXTRON AG·Filed 2003·Granted Dec 12, 2006·30 cites·15 claims
- 0487US7078318B2Method for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Jul 18, 2006·42 cites·18 claims
- 0587US5015747AOrganometallic compoundsMERCK PATENT GMBH·Filed 1988·Granted May 14, 1991·26 cites·6 claims
- 0686US6962624B2Method and device for depositing in particular organic layers using organic vapor phase depositionAIXTRON AG·Filed 2003·Granted Nov 8, 2005·38 cites·16 claims
- 0786US5348911AMaterial-saving process for fabricating mixed crystalsAIXTRON GMBH·Filed 1993·Granted Sep 20, 1994·88 cites·13 claims
- 0884US4880492AOrganometallic compoundsMERCK PATENT GMBH·Filed 1987·Granted Nov 14, 1989·20 cites·10 claims
- 0981US4991540AQuartz-glass reactor for MOCVD systemsAIXTRON GMBH·Filed 1988·Granted Feb 12, 1991·46 cites·11 claims
- 1080US7128786B2Process for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Oct 31, 2006·25 cites·20 claims
- 1179US7524532B2Process for depositing thin layers on a substrate in a process chamber of adjustable heightAIXTRON AG·Filed 2004·Granted Apr 28, 2009·18 cites·11 claims
- 1279US5112432AOrganometallic compoundsMERCK PATENT GMBH·Filed 1989·Granted May 12, 1992·13 cites·7 claims
- 1378US6309465B1CVD reactorAIXTRON AG·Filed 1999·Granted Oct 30, 2001·49 cites·32 claims
- 1476US7201942B2Coating methodAIXTRON AG·Filed 2002·Granted Apr 10, 2007·17 cites·27 claims
- 1571US7067012B2CVD coating deviceAIXTRON AG·Filed 2003·Granted Jun 27, 2006·9 cites·13 claims
- 1664US7135073B2Method and system for semiconductor crystal production with temperature managementAIXTRON AG·Filed 2001·Granted Nov 14, 2006·15 cites·19 claims
- 1764US6905548B2Device for the deposition of crystalline layers on crystalline substratesAIXTRON AG·Filed 2003·Granted Jun 14, 2005·5 cites·9 claims
- 1863US7332038B2Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substratesAIXTRON AG·Filed 2003·Granted Feb 19, 2008·5 cites·8 claims
- 1958US7056388B2Reaction chamber with at least one HF feedthroughAIXTRON AG·Filed 2002·Granted Jun 6, 2006·4 cites·9 claims
- 2056US6506450B2Reactor for coating flat substrates and process for manufacturing such substratesAIXTRON AG·Filed 2001·Granted Jan 14, 2003·3 cites·10 claims
- 2155US5149853AOrganometallic compoundsMERCK PATENT GMBH·Filed 1991·Granted Sep 22, 1992·12 cites·10 claims
- 2254US2006201427A1CVD coating deviceJURGENSEN HOLGER·Filed 2006·Application pending·0 cites
- 2351US6279506B1Reactor for coating plane substrates and method for producing said substratesAIXTRON AG·Filed 1997·Granted Aug 28, 2001·15 cites·16 claims
- 2449US7473316B1Method of growing nitrogenous semiconductor crystal materialsAIXTRON AG·Filed 2000·Granted Jan 6, 2009·3 cites·8 claims
- 2545US4903722AExtraction valve head for tanksMERCK PATENT GMBH·Filed 1989·Granted Feb 27, 1990·12 cites·7 claims
- 2645US2005081788A1Device for depositing thin layers on a substrateFiled 2004·Application pending·0 cites
- 2744US2005109281A1Process for coating a substrate, and apparatus for carrying out the processFiled 2004·Application pending·0 cites
- 2838US2005025909A1Method for the production of III-V laser componentsFiled 2004·Application pending·0 cites
- 2937US5162256AProcess for producing doped semiconductor layersAIXTRON GMBH·Filed 1990·Granted Nov 10, 1992·10 cites·20 claims
- 3036US2005106864A1Process and device for depositing semiconductor layersFiled 2004·Application pending·0 cites
- 3129US2001014397A1Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gasesFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →