Assignee
AIXTRON AG
DE·37 granted patents·2 pending applications·1,072 citations·filing 1997–2010
Top patents by PatentIndex Score
39 records- 0195US6983620B2Method and device for the temperature control of surface temperatures of substrates in a CVD reactorAIXTRON AG·Filed 2005·Granted Jan 10, 2006·29 cites·6 claims
- 0295US6849241B2Device and method for depositing one or more layers on a substrateAIXTRON AG·Filed 2002·Granted Feb 1, 2005·401 cites·20 claims
- 0392US7709398B2Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditionedAIXTRON AG·Filed 2005·Granted May 4, 2010·19 cites·19 claims
- 0491US7762208B2Loading and unloading apparatus for a coating deviceAIXTRON AG·Filed 2007·Granted Jul 27, 2010·17 cites·13 claims
- 0590US7128785B2Method for depositing especially crystalline layers from the gas phase onto especially crystalline substratesAIXTRON AG·Filed 2003·Granted Oct 31, 2006·48 cites·20 claims
- 0690US6899764B2Chemical vapor deposition reactor and process chamber for said reactorAIXTRON AG·Filed 2002·Granted May 31, 2005·34 cites·14 claims
- 0789US7625448B2Inlet system for an MOCVD reactorAIXTRON AG·Filed 2006·Granted Dec 1, 2009·18 cites·20 claims
- 0889US7033921B2Method and device for depositing crystalline layers on crystalline substratesAIXTRON AG·Filed 2004·Granted Apr 25, 2006·31 cites·11 claims
- 0989US6475286B1Seal means for separable closing elements, such as separable elements of chemical vapor deposition chamber and deposition reactor apparatusAIXTRON AG·Filed 2000·Granted Nov 5, 2002·34 cites·13 claims
- 1087US7147718B2Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substratesAIXTRON AG·Filed 2003·Granted Dec 12, 2006·30 cites·15 claims
- 1187US7078318B2Method for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Jul 18, 2006·42 cites·18 claims
- 1286US6962624B2Method and device for depositing in particular organic layers using organic vapor phase depositionAIXTRON AG·Filed 2003·Granted Nov 8, 2005·38 cites·16 claims
- 1385US7294207B2Gas-admission element for CVD processes, and deviceAIXTRON AG·Filed 2003·Granted Nov 13, 2007·32 cites·9 claims
- 1483US6786973B2Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the methodAIXTRON AG·Filed 2003·Granted Sep 7, 2004·25 cites·20 claims
- 1581US6964876B2Method and device for depositing layersAIXTRON AG·Filed 2003·Granted Nov 15, 2005·21 cites·13 claims
- 1680US7128786B2Process for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Oct 31, 2006·25 cites·20 claims
- 1779US7524532B2Process for depositing thin layers on a substrate in a process chamber of adjustable heightAIXTRON AG·Filed 2004·Granted Apr 28, 2009·18 cites·11 claims
- 1878US7410670B2Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unitAIXTRON AG·Filed 2006·Granted Aug 12, 2008·4 cites·19 claims
- 1978US6811614B2CVD reactor with substrate holder which is rotatably driven and mounted by a gas streamAIXTRON AG·Filed 2003·Granted Nov 2, 2004·18 cites·11 claims
- 2078US6309465B1CVD reactorAIXTRON AG·Filed 1999·Granted Oct 30, 2001·49 cites·32 claims
- 2177US7048802B2CVD reactor with graphite-foam insulated, tubular susceptorAIXTRON AG·Filed 2003·Granted May 23, 2006·17 cites·5 claims
- 2277US6972050B2Method for depositing in particular crystalline layers, and device for carrying out the methodAIXTRON AG·Filed 2003·Granted Dec 6, 2005·17 cites·11 claims
- 2376US7201942B2Coating methodAIXTRON AG·Filed 2002·Granted Apr 10, 2007·17 cites·27 claims
- 2475US6878395B2Method and device for the temperature control of surface temperatures of substrates in a CVD reactorAIXTRON AG·Filed 2003·Granted Apr 12, 2005·12 cites·8 claims
- 2571US7067012B2CVD coating deviceAIXTRON AG·Filed 2003·Granted Jun 27, 2006·9 cites·13 claims
- 2669US7842135B2Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowireAIXTRON AG·Filed 2006·Granted Nov 30, 2010·4 cites·17 claims
- 2768US8052796B2CVD reactor comprising a photodiode arrayAIXTRON AG·Filed 2006·Granted Nov 8, 2011·1 cites·8 claims
- 2864US7135073B2Method and system for semiconductor crystal production with temperature managementAIXTRON AG·Filed 2001·Granted Nov 14, 2006·15 cites·19 claims
- 2964US6905548B2Device for the deposition of crystalline layers on crystalline substratesAIXTRON AG·Filed 2003·Granted Jun 14, 2005·5 cites·9 claims
- 3063US7332038B2Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substratesAIXTRON AG·Filed 2003·Granted Feb 19, 2008·5 cites·8 claims
- 3158US7056388B2Reaction chamber with at least one HF feedthroughAIXTRON AG·Filed 2002·Granted Jun 6, 2006·4 cites·9 claims
- 3257US7282096B2Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereonAIXTRON AG·Filed 2003·Granted Oct 16, 2007·5 cites·20 claims
- 3356US6506450B2Reactor for coating flat substrates and process for manufacturing such substratesAIXTRON AG·Filed 2001·Granted Jan 14, 2003·3 cites·10 claims
- 3453US6908838B2Method and device for treating semiconductor substratesAIXTRON AG·Filed 2003·Granted Jun 21, 2005·6 cites·14 claims
- 3551US6279506B1Reactor for coating plane substrates and method for producing said substratesAIXTRON AG·Filed 1997·Granted Aug 28, 2001·15 cites·16 claims
- 3650US6932866B2Method for depositing in particular crystalline layersAIXTRON AG·Filed 2003·Granted Aug 23, 2005·1 cites·3 claims
- 3750US2007074661A1CVD reactor with stabilized process chamber heightAIXTRON AG·Filed 2006·Application pending·0 cites
- 3849US7473316B1Method of growing nitrogenous semiconductor crystal materialsAIXTRON AG·Filed 2000·Granted Jan 6, 2009·3 cites·8 claims
- 3943US2011070370A1Thermal gradient enhanced chemical vapour deposition (tge-cvd)AIXTRON AG·Filed 2010·Application pending·0 cites
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