Inventor · disambiguated record
Kenji Sawamura
Also filed as: SAWAMURA KENJI
18 granted patents·9 pending applications·116 citations·filing 1999–2017
93Inventor score
Top patents by PatentIndex Score
27 records- 0188US9633741B1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Granted Apr 25, 2017·9 cites·9 claims
- 0288US8395922B2Semiconductor memory deviceNOGUCHI MITSUHIRO·Filed 2011·Granted Mar 12, 2013·13 cites·23 claims
- 0388US6495855B1Semiconductor deviceOKI ELECTRIC IND CO LTD·Filed 2000·Granted Dec 17, 2002·39 cites·12 claims
- 0485US10083983B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Sep 25, 2018·5 cites·19 claims
- 0583US7636256B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Dec 22, 2009·10 cites·19 claims
- 0678US9711527B2Semiconductor memory deviceTOSHIBA KK·Filed 2016·Granted Jul 18, 2017·3 cites·24 claims
- 0777US8357966B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2010·Granted Jan 22, 2013·4 cites·9 claims
- 0868US8279679B2Non-volatile semiconductor memory device, method of reading data therefrom, and semiconductor deviceKAMIGAICHI TAKESHI·Filed 2010·Granted Oct 2, 2012·4 cites·18 claims
- 0961US7436714B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Oct 14, 2008·4 cites·20 claims
- 1058US8751888B2Non-volatile semiconductor memory deviceKAMIGAICHI TAKESHI·Filed 2011·Granted Jun 10, 2014·2 cites·13 claims
- 1156US8624314B2Semiconductor device and method for manufacturing semiconductor deviceMINEMURA AYA·Filed 2012·Granted Jan 7, 2014·1 cites·11 claims
- 1256US8426944B2Insulated gate bipolar transistorYONEDA SHUJI·Filed 2010·Granted Apr 23, 2013·1 cites·6 claims
- 1355US9147472B2Nonvolatile semiconductor memory device having stacked memory cell layers and a control circuit controlling write or read based on parameters according to a selected memory cell layerTOSHIBA KK·Filed 2013·Granted Sep 29, 2015·1 cites·10 claims
- 1454US6882024B2Semiconductor device having a dummy active region for controlling high density plasma chemical vapor depositionOKI ELECTRIC IND CO LTD·Filed 2003·Granted Apr 19, 2005·4 cites·18 claims
- 1552US6939810B2Method of forming isolation filmFUJITSU LTD·Filed 2003·Granted Sep 6, 2005·5 cites·25 claims
- 1649US2010270527A1Phase-change memory device and method of manufacturing the phase-change memory deviceTOSHIBA KK·Filed 2009·Application pending·0 cites
- 1747US2005127471A1Semiconductor device having a dummy active region for controlling high density plasma chemical vapor depositionFiled 2005·Application pending·0 cites
- 1845US2010001401A1Semiconductor device including interconnect layer made of copperSAWAMURA KENJI·Filed 2009·Application pending·0 cites
- 1944US7465984B2Nonvolatile memory elementTOSHIBA KK·Filed 2007·Granted Dec 16, 2008·0 cites·18 claims
- 2043US6436789B2Method of forming a device separation regionOKI ELECTRIC IND CO LTD·Filed 1999·Granted Aug 20, 2002·11 cites·5 claims
- 2141US2013043523A1Nonvolatile semiconductor memory device and method of manufacturing the sameOHNO TAKAHIKO·Filed 2012·Application pending·0 cites
- 2241US2007267750A1Semiconductor device including interconnect layer made of copperSAWAMURA KENJI·Filed 2007·Application pending·0 cites
- 2340US2015357042A1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2439US2002068414A1Semiconductor device having a dummy active region for controlling high density plasma chemical vapor depositionFiled 2002·Application pending·0 cites
- 2536US2014036592A1Semiconductor storage deviceTOSHIBA KK·Filed 2013·Application pending·0 cites
- 2635US2010246256A1Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2010·Application pending·0 cites
- 2733US8194445B2Semiconductor storage device comprising dot-type charge accumulation portion and control gate, and method of manufacturing the sameSAWAMURA KENJI·Filed 2010·Granted Jun 5, 2012·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →