Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition

Abstract

A dummy active region is formed in which abrading processes are averaged. A semiconductor device is characterized in that an active region for forming an actual device, a device separation region being formed by a trench, and a dummy active region formed substantially in a rectangular shape are included, and the length of the short side of the dummy active region is less than 1 μm.

What is claimed is:  
     
         1 . A method for forming a semiconductor device on a semiconductor substrate, said method comprising: 
 forming an active region on the semiconductor substrate, the active region being operable to form a semiconductor element;    forming a dummy active region on the semiconductor substrate in a rectangular shape, wherein a length of a short side of said dummy active region is substantially no greater than 1 μm and more than 0.5 μm; and    forming an isolation region on the semiconductor substrate including a trench filled with a high density plasma chemical vapor deposition layer, the isolation region surrounding the active region and the dummy active region.    
     
     
         2 . A method as claimed in  claim 1 , wherein a depth of the trench is about 2500 Å to 5000 Å.  
     
     
         3 . A method as claimed in  claim 1 , wherein the trench has a tapered shape.  
     
     
         4 . A method as claimed in  claim 3 , wherein a taper angle of the trench is about 70 to 90 degrees.  
     
     
         5 . A method as claimed in  claim 3 , wherein a width of an opening of the trench is wider than a width of a bottom of the trench.  
     
     
         6 . A method for forming a semiconductor device on a semiconductor substrate, said method comprising: 
 forming an active region on the semiconductor substrate;    forming a dummy active region on the semiconductor substrate, wherein a distance between the active region and the dummy active region is more than 0.5 μm and less than 10 μm;    forming an isolation region on the semiconductor substrate so as to surround the active region and the dummy active region; and    forming a semiconductor element on the active region such that the semiconductor element includes a gate electrode formed over the active region, wherein a distance between the dummy active region and the gate electrode is more than 0.5 μm.    
     
     
         7 . A method as claimed in  claim 6 , wherein the isolation region is formed so as to include a trench filled with a high density plasma chemical vapor deposition layer.  
     
     
         8 . A method as claimed in  claim 7 , wherein the dummy active region has a rectangular shape including a short side being substantially no greater than 1 μm and more than 0.5 μm.  
     
     
         9 . A method as claimed in  claim 8 , wherein a depth of the trench is about 2500 Å to 5000 Å.  
     
     
         10 . A method as claimed in  claim 8 , wherein the trench has a tapered shape.  
     
     
         11 . A method as claimed in  claim 8 , wherein a taper angle of the trench is about 70 to 90 degrees.  
     
     
         12 . A method as claimed in  claim 10 , wherein a width of an opening of the trench is wider than a width of a bottom of the trench.