Inventor · disambiguated record
Hiroaki Tsunoda
Also filed as: TSUNODA HIROAKI
40 granted patents·9 pending applications·434 citations·filing 1994–2020
98Inventor score
Files withTOSHIBA KK41MITSUBISHI ELECTRIC CORP1MORIKADO MUTSUO1SAKASE ADTECH CO LTD1SEIKO EPSON CORP1
Top patents by PatentIndex Score
49 records- 0196US6720610B2Nonvolatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Apr 13, 2004·86 cites·2 claims
- 0294US7382015B2Semiconductor device including an element isolation portion having a recessTOSHIBA KK·Filed 2005·Granted Jun 3, 2008·24 cites·44 claims
- 0393US7582928B2Nonvolatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2007·Granted Sep 1, 2009·17 cites·12 claims
- 0493US6987047B2Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structureTOSHIBA KK·Filed 2005·Granted Jan 17, 2006·18 cites·3 claims
- 0590US7488646B2Nonvolatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2007·Granted Feb 10, 2009·12 cites·9 claims
- 0686US6770932B2Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Aug 3, 2004·24 cites·15 claims
- 0783US6462373B2Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layerTOSHIBA KK·Filed 2000·Granted Oct 8, 2002·27 cites·13 claims
- 0881US6974746B2Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structureTOSHIBA KK·Filed 2003·Granted Dec 13, 2005·18 cites·3 claims
- 0980US6933194B2Method of manufacturing semiconductor device using STI techniqueTOSHIBA KK·Filed 2003·Granted Aug 23, 2005·25 cites·14 claims
- 1077US7265022B2Method of fabricating semiconductor device with STI structureTOSHIBA KK·Filed 2005·Granted Sep 4, 2007·6 cites·2 claims
- 1177US7166889B2Semiconductor memory device having a gate electrode and a method of manufacturing thereofTOSHIBA KK·Filed 2003·Granted Jan 23, 2007·21 cites·44 claims
- 1274US7382649B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Jun 3, 2008·5 cites·3 claims
- 1371US6791510B2Inflatable structure, array antenna with inflatable structure, and deployment method for inflatable structureSAKASE ADTECH CO LTD·Filed 2001·Granted Sep 14, 2004·29 cites·14 claims
- 1469US7572713B2Method of fabricating semiconductor device with STI structureTOSHIBA KK·Filed 2007·Granted Aug 11, 2009·3 cites·5 claims
- 1564US7928500B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Apr 19, 2011·2 cites·16 claims
- 1663US7586786B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2008·Granted Sep 8, 2009·2 cites·7 claims
- 1760US7795667B2Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memoryTOSHIBA KK·Filed 2003·Granted Sep 14, 2010·7 cites·10 claims
- 1858US5880498ASemiconductor device having a nitrogen doped polysilicon layerTOSHIBA KK·Filed 1997·Granted Mar 9, 1999·17 cites·19 claims
- 1957US6927132B2Method for producing nonvolatile semiconductor memory device and the device itselfTOSHIBA KK·Filed 2003·Granted Aug 9, 2005·5 cites·11 claims
- 2056US6984858B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Jan 10, 2006·6 cites·9 claims
- 2156US6642568B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Nov 4, 2003·6 cites·4 claims
- 2255US6100579AInsulating film for use in semiconductor deviceTOSHIBA KK·Filed 1997·Granted Aug 8, 2000·21 cites·28 claims
- 2355US5698464AMethod of manufacturing a semiconductor device with oxynitride layerTOSHIBA KK·Filed 1997·Granted Dec 16, 1997·15 cites·4 claims
- 2452US7557422B2Semiconductor device with STI structureTOSHIBA KK·Filed 2007·Granted Jul 7, 2009·0 cites·6 claims
- 2551US11562479B2Inspection apparatus, inspection method, and non-volatile storage mediumSEIKO EPSON CORP·Filed 2020·Granted Jan 24, 2023·0 cites·5 claims
- 2649US6953962B2Nonvolatile memory device having a gate electrodeTOSHIBA KK·Filed 2005·Granted Oct 11, 2005·0 cites·27 claims
- 2748US7754568B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2008·Granted Jul 13, 2010·0 cites·3 claims
- 2847US7786013B2Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 31, 2010·0 cites·16 claims
- 2947US2006244098A1Semiconductor device and method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2006·Application pending·0 cites
- 3046US8319270B2Semiconductor device and method for manufacturing the sameMORIKADO MUTSUO·Filed 2009·Granted Nov 27, 2012·0 cites·8 claims
- 3145US5518943AMethod of manufacturing nonvolatile semiconductor memory device having an implanted damage layerTOSHIBA KK·Filed 1995·Granted May 21, 1996·8 cites·5 claims
- 3245US2006081907A1Nonvolatile semiconductor memory device having grooves isolating the floating electrodes of memory cells and method of manufacturing the nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2005·Application pending·0 cites
- 3345US2005116304A1Semiconductor device and manufacturing method thereofFiled 2005·Application pending·0 cites
- 3444US7381641B2Semiconductor device and method for fabricating the sameTOSHIBA KK·Filed 2005·Granted Jun 3, 2008·0 cites·4 claims
- 3543US7026683B2Nonvolatile semiconductor memory device having grooves isolating the floating electrodes of memory cells and method of manufacturing the nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Apr 11, 2006·1 cites·4 claims
- 3640US7095093B2Semiconductor device and method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2004·Granted Aug 22, 2006·0 cites·4 claims
- 3740US6291886B1Semiconductor device having wirings with reflection preventing film and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Sep 18, 2001·8 cites·10 claims
- 3839US7368342B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 6, 2008·0 cites·10 claims
- 3939US6869845B2Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Mar 22, 2005·0 cites·10 claims
- 4039US5541129AMethod of making non-volatile memory deviceTOSHIBA KK·Filed 1994·Granted Jul 30, 1996·6 cites·2 claims
- 4138US2003001227A1Semiconductor device and method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2002·Application pending·0 cites
- 4237US5514896ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted May 7, 1996·4 cites·12 claims
- 4337US2004018682A1Method for producing nonvolatile semiconductor memory device and the device itselfTOSHIBA KK·Filed 2002·Application pending·0 cites
- 4436US2003057484A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Application pending·0 cites
- 4534US7067380B2Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2003·Granted Jun 27, 2006·0 cites·6 claims
- 4634US2002179961A1Nonvolatile semiconductor memory device and manufacturing method of nonvolatile semiconductor memory deviceFiled 2002·Application pending·0 cites
- 4732US2002017677A1Semiconductor device having laminated gate structure and method for manufacturing the semiconductor deviceFiled 2001·Application pending·0 cites
- 4831US5931420ADeployable truss structureMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 3, 1999·11 cites·12 claims
- 4931US2001028080A1Semiconductor device and method of fabricating the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →