Method for producing nonvolatile semiconductor memory device and the device itself

Abstract

Method for producing a nonvolatile semiconductor memory device includes forming a first insulating film on a semiconductor substrate, forming a floating gate electrode material film on the first insulating film, forming a second insulating film on the floating gate electrode material film, forming a control gate electrode material film on the second insulating film, forming a first mask film on the control gate electrode material film, the first mask film having slits extending along a first direction, forming sidewalls on the sides of the first mask film in the slits, and etching the control gate electrode material film, the second insulating film and the floating gate electrode material film using the first mask film and the sidewalls as a mask so as to form memory cells each of which includes a floating gate electrode and a control gate electrode.

What is claimed is:  
     
         1 . A method for producing a nonvolatile semiconductor memory device, comprising: 
 forming a first insulating film on a semiconductor substrate;    forming a floating gate electrode material film on the first insulating film;    forming a second insulating film on the floating gate electrode material film;    forming a control gate electrode material film on the second insulating film;    forming a first mask film on the control gate electrode material film, the first mask film having slits extending along a first direction;    forming sidewalls on the sides of the first mask film in the slits; and    etching the control gate electrode material film, the second insulating film and the floating gate electrode material film using the first mask film and the sidewalls as a mask so as to form memory cells each of which includes a floating gate electrode and a control gate electrode.    
     
     
         2 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , wherein the control gate electrode material film includes a tungsten silicide film.  
     
     
         3 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 2 , wherein at least one of the step of forming the first mask film and the step of forming the sidewalls is performed at a temperature below 600° C.  
     
     
         4 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 2 , wherein the step of forming the first mask film is performed at a temperature below 600° C., and 
 the method further comprises exposing the nonvolatile semiconductor memory device to a heat treatment in a nitrogen atmosphere after the step of forming the first mask film and before the step of forming the sidewalls.  
 
     
     
         5 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 4 , wherein the step of forming the sidewalls is performed at a temperature above 600° C.  
     
     
         6 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , wherein the first mask film is formed of silicon oxide material and the sidewalls are also formed of silicon oxide material.  
     
     
         7 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , wherein the first mask film is formed of silicon nitride material and the sidewalls are also formed of silicon nitride material.  
     
     
         8 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , wherein the first mask film is formed of one of silicon oxide material and a silicon nitride material and the sidewalls are formed of the other of the silicon oxide material and the silicon nitride material.  
     
     
         9 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , further comprising: 
 forming a second mask film on the floating gate electrode material film, the second mask film having slits extending along a second direction which intersects the first direction; and    etching the floating gate material film using the second mask film as a mask.    
     
     
         10 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , wherein the control gate electrode material film includes a high melting metal silicide film.  
     
     
         11 . The method for producing the nonvolatile semiconductor memory device as set forth in  claim 1 , further comprising forming an interlayer dielectric film which covers the memory cells and is embedded in gaps between the memory cells after forming the memory cells.  
     
     
         12 . A nonvolatile semiconductor memory device including a plurality of memory cells, each of the memory cells comprising: 
 a first insulating film formed on a semiconductor substrate;    a floating gate electrode formed on the first insulating film;    a second insulating film formed on the floating gate electrode;    a control gate electrode formed on the second insulating film;    a third insulating film formed on the control gate electrode; and    sidewalls formed on steps, which is in the top corners of the control gate electrode, and on both sides of the third insulating film.    
     
     
         13 . The nonvolatile semiconductor memory device as set forth in  claim 12 , further comprising an interlayer dielectric film which covers the memory cells and is embedded in gaps between the memory cells.  
     
     
         14 . The nonvolatile semiconductor memory device as set forth in  claim 12 , wherein the control gate electrode comprises a tungsten silicide film.  
     
     
         15 . The nonvolatile semiconductor memory device as set forth in  claim 12 , wherein the sidewalls are formed of silicon oxide material.  
     
     
         16 . The nonvolatile semiconductor memory device as set forth in  claim 12 , wherein the sidewalls are formed of silicon nitride material.  
     
     
         17 . The nonvolatile semiconductor memory device as set forth in  claim 12 , wherein the third insulating film is formed of one of silicon oxide material and silicon nitride material and the sidewalls are formed of the other of the silicon oxide material and the silicon nitride material.