Inventor · disambiguated record
Chris Barns
Also filed as: BARNS CHRIS · BARNS CHRIS E
44 granted patents·15 pending applications·1,988 citations·filing 1989–2022
99Inventor score
Top patents by PatentIndex Score
59 records- 0198US7569443B2Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gateINTEL CORP·Filed 2005·Granted Aug 4, 2009·72 cites·9 claims
- 0297US7355281B2Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2006·Granted Apr 8, 2008·47 cites·12 claims
- 0397US7316949B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2005·Granted Jan 8, 2008·50 cites·13 claims
- 0497US7208361B2Replacement gate process for making a semiconductor device that includes a metal gate electrodeINTEL CORP·Filed 2004·Granted Apr 24, 2007·128 cites·20 claims
- 0597US7126199B2Multilayer metal gate electrodeINTEL CORP·Filed 2004·Granted Oct 24, 2006·154 cites·5 claims
- 0696US7271045B2Etch stop and hard mask film property matching to enable improved replacement metal gate processINTEL CORP·Filed 2005·Granted Sep 18, 2007·45 cites·13 claims
- 0796US7153784B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 26, 2006·86 cites·48 claims
- 0896US6858483B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2002·Granted Feb 22, 2005·81 cites·8 claims
- 0995US7157378B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jan 2, 2007·107 cites·20 claims
- 1094US7220635B2Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layerINTEL CORP·Filed 2003·Granted May 22, 2007·78 cites·20 claims
- 1194US7217611B2Methods for integrating replacement metal gate structuresINTEL CORP·Filed 2003·Granted May 15, 2007·70 cites·17 claims
- 1294US7018918B2Method of forming a selectively converted inter-layer dielectric using a porogen materialINTEL CORP·Filed 2003·Granted Mar 28, 2006·76 cites·13 claims
- 1394US6972225B2integrating n-type and P-type metal gate transistorsINTEL CORP·Filed 2004·Granted Dec 6, 2005·54 cites·19 claims
- 1494US6953719B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2004·Granted Oct 11, 2005·62 cites·9 claims
- 1593US7153734B2CMOS device with metal and silicide gate electrodes and a method for making itINTEL CORP·Filed 2003·Granted Dec 26, 2006·64 cites·4 claims
- 1693US7138323B2Planarizing a semiconductor structure to form replacement metal gatesINTEL CORP·Filed 2004·Granted Nov 21, 2006·51 cites·6 claims
- 1793US6464855B1Method and apparatus for electrochemical planarization of a workpieceSPEEDFAM IPEC CORP·Filed 2000·Granted Oct 15, 2002·74 cites·27 claims
- 1893US5851140ASemiconductor wafer polishing apparatus with a flexible carrier plateINTEGRATED PROCESS EQUIPMENT C·Filed 1997·Granted Dec 22, 1998·241 cites·19 claims
- 1991US7078282B2Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed filmsINTEL CORP·Filed 2003·Granted Jul 18, 2006·42 cites·26 claims
- 2090US7183184B2Method for making a semiconductor device that includes a metal gate electrodeINTEL CORP·Filed 2003·Granted Feb 27, 2007·54 cites·2 claims
- 2190US6943121B2Selectively converted inter-layer dielectricINTEL CORP·Filed 2002·Granted Sep 13, 2005·43 cites·12 claims
- 2289US8148786B2Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gateKAVALIEROS JACK·Filed 2009·Granted Apr 3, 2012·15 cites·5 claims
- 2389US4957357AMultiple axis reticleNASA·Filed 1989·Granted Sep 18, 1990·67 cites·19 claims
- 2487US6743683B2Polysilicon opening polishINTEL CORP·Filed 2001·Granted Jun 1, 2004·31 cites·11 claims
- 2585US7422936B2Facilitating removal of sacrificial layers via implantation to form replacement metal gatesINTEL CORP·Filed 2004·Granted Sep 9, 2008·39 cites·15 claims
- 2685US7166506B2Poly open polish processINTEL CORP·Filed 2004·Granted Jan 23, 2007·34 cites·20 claims
- 2784US7671471B2Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrodeINTEL CORP·Filed 2008·Granted Mar 2, 2010·8 cites·18 claims
- 2883US6908863B2Sacrificial dielectric planarization layerINTEL CORP·Filed 2003·Granted Jun 21, 2005·24 cites·20 claims
- 2976US10598521B2Metrology systemDWFRITZ AUTOMATION INC·Filed 2019·Granted Mar 24, 2020·1 cites·24 claims
- 3075US7045428B2Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junctionINTEL CORP·Filed 2004·Granted May 16, 2006·20 cites·20 claims
- 3174US6705928B1Through-pad slurry delivery for chemical-mechanical polishINTEL CORP·Filed 2002·Granted Mar 16, 2004·15 cites·21 claims
- 3273US12146736B2Metrology systemAQUI DEREK·Filed 2022·Granted Nov 19, 2024·0 cites·8 claims
- 3369US7883951B2CMOS device with metal and silicide gate electrodes and a method for making itINTEL CORP·Filed 2006·Granted Feb 8, 2011·3 cites·11 claims
- 3468US7239019B2Selectively converted inter-layer dielectricINTEL CORP·Filed 2005·Granted Jul 3, 2007·2 cites·14 claims
- 3566US11486689B2Metrology systemDWFRITZ AUTOMATION INC·Filed 2020·Granted Nov 1, 2022·0 cites·9 claims
- 3665US7294931B2Method and apparatus for selective depositionINTEL CORP·Filed 2004·Granted Nov 13, 2007·10 cites·16 claims
- 3763US7238610B2Method and apparatus for selective depositionINTEL CORP·Filed 2003·Granted Jul 3, 2007·9 cites·29 claims
- 3862US7109557B2Sacrificial dielectric planarization layerINTEL CORP·Filed 2004·Granted Sep 19, 2006·6 cites·4 claims
- 3962US6558562B2Work piece wand and method for processing work pieces using a work piece handling wandSPEEDFAM IPEC CORP·Filed 2001·Granted May 6, 2003·10 cites·38 claims
- 4061US7144816B2Polysilicon opening polishINTEL CORP·Filed 2004·Granted Dec 5, 2006·6 cites·9 claims
- 4160US7754552B2Preventing silicide formation at the gate electrode in a replacement metal gate technologyINTEL CORP·Filed 2003·Granted Jul 13, 2010·8 cites·11 claims
- 4251US2006272773A1Semiconductor substrate polishing methods and equipmentFISCHER PAUL B·Filed 2006·Application pending·0 cites
- 4350US2006097347A1Novel slurry for chemical mechanical polishing of metalsINTEL CORP·Filed 2005·Application pending·0 cites
- 4450US2006099817A1Novel slurry for chemical mechanical polishing of metalsINTEL CORP·Filed 2005·Application pending·0 cites
- 4549US2006237804A1Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed filmsCHAU ROBERT S·Filed 2006·Application pending·0 cites
- 4649US2007037372A1Planarizing a semiconductor structure to form replacement metal gatesKAVALIEROS JACK·Filed 2006·Application pending·0 cites
- 4745US12492891B2Non-contact optical measurement devices and exchangeable optical probesDWFRITZ AUTOMATION LLC·Filed 2020·Granted Dec 9, 2025·0 cites·14 claims
- 4845US7205236B2Semiconductor substrate polishing methods and equipmentINTEL CORP·Filed 2004·Granted Apr 17, 2007·0 cites·25 claims
- 4944US2008160256A1Reduction of line edge roughness by chemical mechanical polishingBRISTOL ROBERT L·Filed 2006·Application pending·0 cites
- 5044US2019351516A1Micro assembly using micro multi-toolsDWFRITZ AUTOMATION INC·Filed 2019·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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