Inventor · disambiguated record
Chung-Woo Kim
Also filed as: KIM CHUNG-WOO
38 granted patents·17 pending applications·585 citations·filing 2000–2010
98Inventor score
Top patents by PatentIndex Score
55 records- 0197US7391075B2Non-volatile semiconductor memory device with alternative metal gate materialSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 24, 2008·70 cites·5 claims
- 0296US7646041B2Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·59 cites·12 claims
- 0394US7053448B2SONOS type memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 30, 2006·30 cites·5 claims
- 0493US7345898B2Complementary nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·22 cites·25 claims
- 0592US6946703B2SONOS memory device having side gate stacks and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 20, 2005·83 cites·24 claims
- 0691US7402492B2Method of manufacturing a memory device having improved erasing characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 22, 2008·17 cites·10 claims
- 0791US6936884B2Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memorySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 30, 2005·67 cites·32 claims
- 0890US7456468B2Semiconductor device including high-k insulating layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 25, 2008·16 cites·7 claims
- 0981US7858464B2Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 28, 2010·7 cites·17 claims
- 1080US6930343B2Nonvolatile memory device utilizing a vertical nanotubeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 16, 2005·28 cites·14 claims
- 1179US7250653B2SONOS memory device having nano-sized trap elementsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 31, 2007·21 cites·5 claims
- 1279US7187030B2SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 6, 2007·21 cites·16 claims
- 1377US7208365B2Nonvolatile memory device and method of manufacturing the sameKWANG YOUL SEO·Filed 2006·Granted Apr 24, 2007·8 cites·25 claims
- 1476US7420256B2Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 2, 2008·18 cites·34 claims
- 1576US7374991B2SONOS memory device having side gate stacks and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·6 cites·19 claims
- 1674US8139387B2Method of erasing a memory device including complementary nonvolatile memory devicesPARK YOON-DONG·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 1774US7432554B2CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·5 cites·26 claims
- 1874US7202521B2Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·19 cites·31 claims
- 1970US7615821B2Charge trap memory with avalanche generation inducing layerSEOUL NAT UNIV IND FOUNDATION·Filed 2006·Granted Nov 10, 2009·4 cites·14 claims
- 2070US6479365B2Single electron transistor using porous silicon and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 12, 2002·13 cites·10 claims
- 2169US7349262B2Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·7 cites·11 claims
- 2268US7531870B2SONOS memory device having nano-sized trap elementsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·3 cites·14 claims
- 2365US6414333B1Single electron transistor using porous siliconSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 2, 2002·9 cites·7 claims
- 2464US7629244B2Method of fabricating a single electron transistor having memory functionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 8, 2009·6 cites·5 claims
- 2562US7105874B2Single electron transistor having memory functionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·14 cites·37 claims
- 2661US8553455B2Shape memory deviceTIWARI SANDIP·Filed 2006·Granted Oct 8, 2013·2 cites·24 claims
- 2760US7719871B2Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·1 cites·10 claims
- 2859US7670916B2Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 2, 2010·1 cites·10 claims
- 2959US7439574B2Silicon/oxide/nitride/silicon nonvolatile memory with vertical channelsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 21, 2008·8 cites·25 claims
- 3058US7358137B2Memory devices including barrier layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·1 cites·17 claims
- 3153US7825459B2Method of operating a SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 2, 2010·0 cites·20 claims
- 3253US7411261B2MEMS device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 12, 2008·5 cites·11 claims
- 3353US7112842B2Nonvolatile memory device and method of manufacturing the sameKWANG YOUL SEO·Filed 2004·Granted Sep 26, 2006·6 cites·8 claims
- 3451US7759196B2Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 20, 2010·0 cites·12 claims
- 3550US2008261366A1Non-volatile memory device having improved erase efficiency and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3649US6720201B2MEMS device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 13, 2004·3 cites·19 claims
- 3749US2009068808A1Method of manufacturing a nonvolatile semiconductor memory device having a gate stackSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3849US2008217677A1Non-volatile semiconductor memory device with alternative metal gate materialSAMSUNG ELECTRIC·Filed 2008·Application pending·0 cites
- 3948US7531865B2Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·0 cites·6 claims
- 4048US2007296026A1SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4147US8217445B2SONOS memory device using an amorphous memory node materialJEON SANG-HUN·Filed 2004·Granted Jul 10, 2012·2 cites·21 claims
- 4247US2007138541A1Method of erasing data from SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4346US2009001419A1Non-Volatile Memory Devices and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4445US2006131636A1Non-volatile memory device having improved erase efficiency and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4544US8237214B2Non-volatile memory device including metal-insulator transition materialPARK WAN-JUN·Filed 2007·Granted Aug 7, 2012·0 cites·8 claims
- 4644US2006192246A1Semiconductor memory device that uses metal nitride as trap site and method of manufacturing the sameJEON SANG-HUN·Filed 2006·Application pending·0 cites
- 4744US2006108629A1Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4843US2008272426A1Nonvolatile Memory Transistors Including Active Pillars and Related Methods and ArraysSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4942US2009001352A1Non-Volatile Memory Device, Method of Manufacturing the Same, and Semiconductor PackageSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 5041US2006105524A1Non-volatile device manufactured using ion-implantation and method of manufacture the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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