Inventor · disambiguated record
Yong Soo Jung
Also filed as: JUNG YONG S · JUNG YONG-SOO
13 granted patents·7 pending applications·31 citations·filing 2002–2020
88Inventor score
Top patents by PatentIndex Score
20 records- 0184US7511337B2Recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·8 cites·3 claims
- 0282US7687852B2Recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 30, 2010·6 cites·2 claims
- 0372US7576339B2Ion implantation apparatus and method for obtaining non-uniform ion implantation energyHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 18, 2009·5 cites·11 claims
- 0469US7529116B2Memory device having a threshold voltage switching device and a method for storing information in the memory deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 5, 2009·4 cites·7 claims
- 0568US7588996B2Oxide pattern forming method and patterning method of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Sep 15, 2009·3 cites·20 claims
- 0666US7488959B2Apparatus and method for partial ion implantationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 10, 2009·2 cites·16 claims
- 0765US7981782B2Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regionsHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 19, 2011·1 cites·3 claims
- 0864US7678653B2Method of fabricating a recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 16, 2010·1 cites·7 claims
- 0963US7790551B2Method for fabricating a transistor having a recess gate structureHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 7, 2010·1 cites·5 claims
- 1052US2011275205A1Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regionsHYNIX SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 1152US2011275204A1Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regionsHYNIX SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 1252US2011275203A1Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regionsHYNIX SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 1351US11329416B2Connector apparatusHYUNDAI MOTOR CO LTD·Filed 2020·Granted May 10, 2022·0 cites·9 claims
- 1449US7176244B1Use of 2-nitropropanol, 2-nitroethane, and 2-nitroethanol for control of microbial pathogensUS AGRICULTURE·Filed 2002·Granted Feb 13, 2007·0 cites·23 claims
- 1549US2007120182A1Transistor having recess gate structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1647US2012015510A1Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regionsLEE MIN YONG·Filed 2011·Application pending·0 cites
- 1746US2008130188A1Electrostatic discharge device for portable terminalSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1845US7554106B2Partial ion implantation apparatus and method using bundled beamHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jun 30, 2009·0 cites·15 claims
- 1939US2012102145A1Server, user terminal apparatus and method of controlling the same, and method of providing serviceJUNG HEE-JAE·Filed 2011·Application pending·0 cites
- 2029US10469468B2Apparatus and method for automatically converting user interfaceHONG SANG MO·Filed 2008·Granted Nov 5, 2019·0 cites·9 claims
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