Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Abstract

A method of fabricating a semiconductor device includes forming a mask pattern for defining a region of a semiconductor substrate. An impurity layer for suppressing punch-through will be formed in the defined region. Dopant ions are implanted into the defined region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.

1 .- 8 . (canceled) 
     
     
         9 . A method of fabricating a semiconductor device, the method comprising:
 forming a mask pattern for defining a region on a semiconductor substrate, wherein an impurity layer for suppressing punch-through will be formed in the defined region; and   implanting dopant ions into the defined region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.   
     
     
         10 . The method according to  claim 9 , wherein the mask pattern is formed to expose the region in which the impurity layer for suppressing the punch-through of an NMOS transistor will be formed, and wherein implanting the dopant ions further comprises implanting B 11  ions at a concentration of 0.5×10 13  atoms/cm 2  to 1×10 13  atoms/cm 2  and at an energy of approximately 30 to 80 KeV. 
     
     
         11 . The method according to  claim 9 , wherein the mask pattern is formed to expose the region in which the impurity layer for suppressing the punch-through of a PMOS transistor will be formed, and wherein implanting the dopant ions further comprises implanting As 75  ions at a concentration of 9.4×10 12  atoms/cm 2  and at an energy of 150 KeV. 
     
     
         12 .- 14 . (canceled)