Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Abstract

A method of fabricating a semiconductor device includes forming a mask pattern for defining a region on a semiconductor substrate. A well will be formed in the defined region. Dopant ions are implanted into the defined region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.

1 - 2 . (canceled) 
     
     
         3 . A method of fabricating a semiconductor device, the method comprising:
 forming a mask pattern for defining a region on a semiconductor substrate, wherein a well will be formed in the defined region; and   implanting dopant ions into the defined region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.   
     
     
         4 . The method according to  claim 3 , wherein the well is a P-well for forming an NMOS transistor, and wherein implanting the dopant ions further comprises implanting B 11  ions at a concentration of approximately 1×10 13  atoms/cm 2  to 2×10 13  atoms/cm 2  and at an energy of approximately 250 to 350 KeV. 
     
     
         5 . The method according to  claim 3 , wherein the well is an N-well for forming a PMOS transistor, and wherein implanting the dopant ions further comprises implanting P 31  ions at a concentration of approximately 1×10 13  atoms/cm 2  to 2×10 13  atoms/cm 2  and at an energy of approximately 1,000 to 1,200 KeV. 
     
     
         6 .- 14 . (canceled)