Inventor · disambiguated record
Takeo Matsuki
Also filed as: MATSUKI TAKEO
15 granted patents·9 pending applications·338 citations·filing 1997–2012
94Inventor score
Top patents by PatentIndex Score
24 records- 0190US6545360B1Semiconductor device and manufacturing method thereofNEC CORP·Filed 2000·Granted Apr 8, 2003·58 cites·17 claims
- 0288US6914336B2Semiconductor device structure and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2001·Granted Jul 5, 2005·55 cites·18 claims
- 0388US6429089B1Semiconductor device and method of fabricating the sameNEC CORP·Filed 2000·Granted Aug 6, 2002·37 cites·10 claims
- 0481US7969741B2Substrate structurePANASONIC CORP·Filed 2006·Granted Jun 28, 2011·11 cites·7 claims
- 0580US5960252AMethod for manufacturing a semiconductor memory device having a ferroelectric capacitorNEC CORP·Filed 1997·Granted Sep 28, 1999·59 cites·7 claims
- 0677US7816213B2Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereofNEC ELECTRONICS CORP·Filed 2008·Granted Oct 19, 2010·6 cites·3 claims
- 0777US6121083ASemiconductor device and method of fabricating the sameNEC CORP·Filed 1998·Granted Sep 19, 2000·43 cites·9 claims
- 0871US6423999B1Semiconductor device and capacitor with means to prevent deterioration due to hydrogenNEC CORP·Filed 2000·Granted Jul 23, 2002·11 cites·18 claims
- 0968US6081417ACapacitor having a ferroelectric layerNEC CORP·Filed 1998·Granted Jun 27, 2000·28 cites·11 claims
- 1066US8299536B2Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereofMATSUKI TAKEO·Filed 2010·Granted Oct 30, 2012·2 cites·4 claims
- 1166US6531749B1Field effect transistor having a two layered gate electrodeNEC CORP·Filed 1999·Granted Mar 11, 2003·22 cites·2 claims
- 1260US8581350B2Field effect transistor and semiconductor device, and method for manufacturing sameMATSUKI TAKEO·Filed 2012·Granted Nov 12, 2013·1 cites·10 claims
- 1348US2009057787A1Semiconductor deviceNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 1448US2008105910A1Field effect transistor and semiconductor device, and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1548US2010184490A1Portable terminalPANASONIC CORP·Filed 2008·Application pending·0 cites
- 1647US2013009234A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2012·Application pending·0 cites
- 1744US8329540B2Semiconductor device and manufacturing method thereofMATSUKI TAKEO·Filed 2011·Granted Dec 11, 2012·0 cites·8 claims
- 1843US2006214198A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1938US8466053B2Method of manufacturing semiconductor device, and semiconductor deviceMATSUKI TAKEO·Filed 2011·Granted Jun 18, 2013·0 cites·8 claims
- 2038US2002031916A1Semiconductor device and manufacturing method thereofNEC CORP·Filed 2001·Application pending·0 cites
- 2137US2003122179A1Method of manufacturing a field effect transistor having a two-layered gate electrodeNEC CORP·Filed 2002·Application pending·0 cites
- 2236US5976946AThin film formation method for ferroelectric materialsNEC CORP·Filed 1997·Granted Nov 2, 1999·5 cites·15 claims
- 2336US2011175172A1Manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2436US2012193728A1Semiconductor device and manufacturing method thereforMATSUKI TAKEO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →