Field effect transistor and semiconductor device, and method for manufacturing same

Abstract

Current drive efficiency is deteriorated in the conventional FET. The FET 20 includes an electrode film 24 a provided over the semiconductor substrate 10 and a stressor film 24 b that is provided on the electrode film 24 a and constitutes a gate electrode 24 together with the electrode film 24 a . Each of the electrode film 24 a and the stressor film 24 b is composed of a metal, a metallic nitride or a metallic silicide. The stressor film 24 b is capable of exhibiting a compressive stress over the semiconductor substrate 10.

1 . An n-channel field effect transistor, comprising: 
 a first electrode film provided over a semiconductor substrate; and    a second electrode film provided on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,    wherein at least one of said first electrode film and said second electrode film is a stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate, and    wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.    
     
     
         2 . A p-channel field effect transistor, comprising: 
 a first electrode film provided over semiconductor substrate; and    a second electrode film provided on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,    wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate, and    wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.    
     
     
         3 . The field effect transistor as set forth in  claim 1 , 
 wherein said second electrode film is said stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate.    
     
     
         4 . The field effect transistor as set forth in  claim 2 , 
 wherein said second electrode film is said stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate.    
     
     
         5 . The field effect transistor as set forth in  claim 1 , 
 wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.    
     
     
         6 . The field effect transistor as set forth in  claim 2 , 
 wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.    
     
     
         7 . The field effect transistor as set forth in  claim 3 , 
 wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.    
     
     
         8 . The field effect transistor as set forth in  claim 4 , 
 wherein said second electrode film is selected from a group consisting of tungsten, molybdenum, titanium, tantalum, and ruthenium, and a nitride thereof.    
     
     
         9 . A semiconductor device comprising the field effect transistor of  claim 1 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors.    
     
     
         10 . A semiconductor device comprising the field effect transistor of  claim 2 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         11 . A semiconductor device comprising the field effect transistor of  claim 3 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         12 . A semiconductor device comprising the field effect transistor of  claim 4 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         13 . A semiconductor device comprising the field effect transistor of  claim 5 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         14 . A semiconductor device comprising the field effect transistor of  claim 6 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         15 . A semiconductor device comprising the field effect transistor of  claim 7 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         16 . A semiconductor device comprising the field effect transistor of  claim 8 , 
 wherein said semiconductor device comprises a plurality of said field effect transistors that have said second electrode films having different thickness.    
     
     
         17 . A method for manufacturing an n-channel field effect transistor, comprising: 
 forming a first electrode film on a semiconductor substrate; and    forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,    wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate, and    wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.    
     
     
         18 . The method for manufacturing the field effect transistor as set forth in  claim 17 , 
 wherein said stressor film is formed by a sputter process at a temperature higher than a room temperature.    
     
     
         19 . A method for manufacturing a p-channel field effect transistor, comprising: 
 forming a first electrode film on a semiconductor substrate; and    forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,    wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate, and    wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide.    
     
     
         20 . The method for manufacturing the field effect transistor as set forth in  claim 19 , 
 wherein said stressor film is formed by a chemical vapor deposition process at a temperature higher than a room temperature.    
     
     
         21 . A method for manufacturing a semiconductor device, comprising: 
 manufacturing said n-channel field effect transistor by the method; forming a first electrode film on a semiconductor substrate; and forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,    wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a compressive stress over said semiconductor substrate, and    wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide    or the method for manufacturing the n-channel field effect transistor, wherein said stressor film is formed by a sputter process at a temperature higher than a room temperature; and    manufacturing said p-channel field effect transistor by the method; forming a first electrode film on a semiconductor substrate; and    forming a second electrode film on said first electrode film, said second electrode film and said first electrode film constituting a gate electrode,    wherein at least one of said first electrode film or said second electrode film is a stressor film that is capable of exhibiting a tensile stress for said semiconductor substrate, and    wherein each of said first and said second electrode films is composed of a metal, a metallic nitride or a metallic silicide    or method for manufacturing the p-channel field effect transistor wherein said stressor film is formed by a chemical vapor deposition process at a temperature higher than a room temperature,    wherein said n-channel field effect transistor and said p-channel field effect transistor are formed in said semiconductor substrate.