US2013009234A1PendingUtilityA1
Semiconductor device and manufacturing method thereof
Est. expiryMar 30, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Takeo Matsuki
H10D 64/01318H10D 30/601H10D 30/0227H10D 64/667H10D 84/0177H10D 84/038H10D 64/669
47
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A semiconductor device includes a substrate, a first gate insulation film formed over a first device forming region disposed in the substrate, a second gate insulation film formed over a second device forming region disposed in the substrate, a lower gate electrode film formed over the first gate insulation film and over the second gate insulation film and comprising a metal nitride film; a mask film formed over the lower gate electrode film situated over the second gate insulation film, and an upper gate electrode film formed over the lower gate electrode film and over the mask film.
Claims
exact text as granted — not AI-modified1 . A semiconductor device comprising: a substrate; a first gate insulation film formed over a first device forming region disposed in the substrate; a second gate insulation film formed over a second device forming region disposed in the substrate; a lower gate electrode film formed over the first gate insulation film and over the second gate insulation film and comprising a metal nitride film; a mask film formed over the lower gate electrode film situated over the second gate insulation film; and an upper gate electrode film formed over the lower gate electrode film and over the mask film.
Join the waitlist — get patent alerts
Track US2013009234A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.