Inventor · disambiguated record
Srinivas D. Nemani
Also filed as: NEMANI SRINIVAS · NEMANI SRINIVAS D
236 granted patents·74 pending applications·9,099 citations·filing 1996–2025
99Inventor score
Files withAPPLIED MATERIALS INC278MICROMATERIALS LLC8NEMANI SRINIVAS D5ZHOU YIFENG3COMMISSARIAT ENERGIE ATOMIQUE2
Top patents by PatentIndex Score
310 records- 0199US9269590B2Spacer formationAPPLIED MATERIALS INC·Filed 2014·Granted Feb 23, 2016·195 cites·15 claims
- 0299US7749563B2Two-layer film for next generation damascene barrier application with good oxidation resistanceAPPLIED MATERIALS INC·Filed 2002·Granted Jul 6, 2010·466 cites·31 claims
- 0399US6413583B1Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compoundAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·725 cites·6 claims
- 0499US6347636B1Methods and apparatus for gettering fluorine from chamber material surfacesAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·579 cites·12 claims
- 0598US10923367B2Process chamber for etching low K and other dielectric filmsAPPLIED MATERIALS INC·Filed 2018·Granted Feb 16, 2021·41 cites·34 claims
- 0698US9865484B1Selective etch using material modification and RF pulsingAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·109 cites·14 claims
- 0798US9543163B2Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching processAPPLIED MATERIALS INC·Filed 2013·Granted Jan 10, 2017·114 cites·19 claims
- 0898US9478433B1Cyclic spacer etching process with improved profile controlAPPLIED MATERIALS INC·Filed 2015·Granted Oct 25, 2016·109 cites·20 claims
- 0998US9385028B2Air gap processAPPLIED MATERIALS INC·Filed 2014·Granted Jul 5, 2016·146 cites·15 claims
- 1098US9287095B2Semiconductor system assemblies and methods of operationAPPLIED MATERIALS INC·Filed 2013·Granted Mar 15, 2016·153 cites·17 claims
- 1198US9093389B2Method of patterning a silicon nitride dielectric filmAPPLIED MATERIALS INC·Filed 2014·Granted Jul 28, 2015·104 cites·19 claims
- 1298US8980758B1Methods for etching an etching stop layer utilizing a cyclical etching processAPPLIED MATERIALS INC·Filed 2013·Granted Mar 17, 2015·192 cites·18 claims
- 1398US8895449B1Delicate dry cleanAPPLIED MATERIALS INC·Filed 2013·Granted Nov 25, 2014·182 cites·17 claims
- 1498US8802572B2Method of patterning a low-k dielectric filmAPPLIED MATERIALS INC·Filed 2013·Granted Aug 12, 2014·115 cites·20 claims
- 1598US8242031B2High quality silicon oxide films by remote plasma CVD from disilane precursorsMALLICK ABHIJIT BASU·Filed 2010·Granted Aug 14, 2012·570 cites·8 claims
- 1698US7867923B2High quality silicon oxide films by remote plasma CVD from disilane precursorsAPPLIED MATERIALS INC·Filed 2007·Granted Jan 11, 2011·106 cites·16 claims
- 1798US7825044B2Curing methods for silicon dioxide multi-layersAPPLIED MATERIALS INC·Filed 2010·Granted Nov 2, 2010·55 cites·20 claims
- 1898US7790634B2Method for depositing and curing low-k films for gapfill and conformal film applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Sep 7, 2010·218 cites·32 claims
- 1998US7745352B2Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II processAPPLIED MATERIALS INC·Filed 2007·Granted Jun 29, 2010·57 cites·19 claims
- 2098US7541297B2Method and system for improving dielectric film quality for void free gap fillAPPLIED MATERIALS INC·Filed 2007·Granted Jun 2, 2009·664 cites·7 claims
- 2198US7498273B2Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Mar 3, 2009·105 cites·37 claims
- 2298US6465366B1Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layersAPPLIED MATERIALS INC·Filed 2000·Granted Oct 15, 2002·315 cites·44 claims
- 2398US5812403AMethods and apparatus for cleaning surfaces in a substrate processing systemAPPLIED MATERIALS INC·Filed 1996·Granted Sep 22, 1998·459 cites·20 claims
- 2497US10957518B2Chamber with individually controllable plasma generation regions for a reactor for processing a workpieceAPPLIED MATERIALS INC·Filed 2020·Granted Mar 23, 2021·4 cites·13 claims
- 2597US10748783B2Gas delivery moduleAPPLIED MATERIALS INC·Filed 2019·Granted Aug 18, 2020·17 cites·20 claims
- 2697US10720341B2Gas delivery system for high pressure processing chamberMICROMATERIALS LLC·Filed 2018·Granted Jul 21, 2020·20 cites·9 claims
- 2797US10529603B2High pressure wafer processing systems and related methodsMICROMATERIALS LLC·Filed 2019·Granted Jan 7, 2020·20 cites·20 claims
- 2897US10269571B2Methods for fabricating nanowire for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2017·Granted Apr 23, 2019·19 cites·20 claims
- 2997US10224224B2High pressure wafer processing systems and related methodsMICROMATERIALS LLC·Filed 2017·Granted Mar 5, 2019·19 cites·24 claims
- 3097US10203604B2Method and apparatus for post exposure processing of photoresist wafersAPPLIED MATERIALS INC·Filed 2016·Granted Feb 12, 2019·16 cites·16 claims
- 3197US10179941B1Gas delivery system for high pressure processing chamberMICROMATERIALS LLC·Filed 2017·Granted Jan 15, 2019·29 cites·18 claims
- 3297US9829790B2Immersion field guided exposure and post-exposure bake processAPPLIED MATERIALS INC·Filed 2015·Granted Nov 28, 2017·12 cites·15 claims
- 3397US9777378B2Advanced process flow for high quality FCVD filmsAPPLIED MATERIALS INC·Filed 2015·Granted Oct 3, 2017·18 cites·19 claims
- 3497US9484202B1Apparatus and methods for spacer deposition and selective removal in an advanced patterning processAPPLIED MATERIALS INC·Filed 2015·Granted Nov 1, 2016·22 cites·18 claims
- 3597US9412613B2Development of high etch selective hardmask material by ion implantation into amorphous carbon filmsAPPLIED MATERIALS INC·Filed 2014·Granted Aug 9, 2016·54 cites·10 claims
- 3697US9190290B2Halogen-free gas-phase silicon etchAPPLIED MATERIALS INC·Filed 2014·Granted Nov 17, 2015·97 cites·15 claims
- 3797US9165783B2Method of patterning a low-k dielectric filmNEMANI SRINIVAS D·Filed 2013·Granted Oct 20, 2015·118 cites·17 claims
- 3897US8748322B1Silicon oxide recess etchAPPLIED MATERIALS INC·Filed 2013·Granted Jun 10, 2014·125 cites·19 claims
- 3997US7943531B2Methods for forming a silicon oxide layer over a substrateAPPLIED MATERIALS INC·Filed 2007·Granted May 17, 2011·67 cites·26 claims
- 4097US7902080B2Deposition-plasma cure cycle process to enhance film quality of silicon dioxideAPPLIED MATERIALS INC·Filed 2007·Granted Mar 8, 2011·55 cites·30 claims
- 4197US6764958B1Method of depositing dielectric filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jul 20, 2004·314 cites·45 claims
- 4297US6537733B2Method of depositing low dielectric constant silicon carbide layersAPPLIED MATERIALS INC·Filed 2001·Granted Mar 25, 2003·292 cites·90 claims
- 4397US6352591B1Methods and apparatus for shallow trench isolationAPPLIED MATERIALS INC·Filed 2000·Granted Mar 5, 2002·112 cites·18 claims
- 4497US6114216AMethods for shallow trench isolationAPPLIED MATERIALS INC·Filed 1996·Granted Sep 5, 2000·230 cites·16 claims
- 4596US10950429B2Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefromAPPLIED MATERIALS INC·Filed 2019·Granted Mar 16, 2021·14 cites·17 claims
- 4696US10714331B2Method to fabricate thermally stable low K-FinFET spacerAPPLIED MATERIALS INC·Filed 2019·Granted Jul 14, 2020·15 cites·20 claims
- 4796US10636704B2Seam-healing method upon supra-atmospheric process in diffusion promoting ambientAPPLIED MATERIALS INC·Filed 2018·Granted Apr 28, 2020·14 cites·20 claims
- 4896US10358715B2Integrated cluster tool for selective area depositionAPPLIED MATERIALS INC·Filed 2016·Granted Jul 23, 2019·15 cites·17 claims
- 4996US10249495B2Diamond like carbon layer formed by an electron beam plasma processAPPLIED MATERIALS INC·Filed 2016·Granted Apr 2, 2019·17 cites·16 claims
- 5096US9716005B1Plasma poisoning to enable selective depositionAPPLIED MATERIALS INC·Filed 2016·Granted Jul 25, 2017·13 cites·6 claims
Showing the top 50 of 310 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →