Inventor · disambiguated record
Masato Takita
Also filed as: TAKITA MASATO
38 granted patents·3 pending applications·877 citations·filing 1995–2012
98Inventor score
Files withFUJITSU LTD35FUJITSU MICROELECTRONICS LTD2FUJITSU SEMICONDUCTOR LTD2FUJISU MICROELECTRONICS LTD1
Top patents by PatentIndex Score
41 records- 0190US6628564B1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJITSU LTD·Filed 1999·Granted Sep 30, 2003·63 cites·24 claims
- 0290US6605963B2Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuitFUJITSU LTD·Filed 1999·Granted Aug 12, 2003·65 cites·42 claims
- 0390US6172537B1Semiconductor deviceFUJITSU LTD·Filed 1999·Granted Jan 9, 2001·86 cites·5 claims
- 0487US6229363B1Semiconductor deviceFUJITSU LTD·Filed 1999·Granted May 8, 2001·69 cites·66 claims
- 0585US6115316ASemiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower typeFUJITSU LTD·Filed 1999·Granted Sep 5, 2000·51 cites·8 claims
- 0685US5936912AElectronic device and semiconductor memory device using the sameFUJITSU LTD·Filed 1998·Granted Aug 10, 1999·48 cites·13 claims
- 0782US6049239AVariable delay circuit and semiconductor integrated circuit deviceFUJITSU LTD·Filed 1997·Granted Apr 11, 2000·88 cites·36 claims
- 0880US6198686B1Memory device having row decoderFUJITSU LTD·Filed 2000·Granted Mar 6, 2001·25 cites·12 claims
- 0979US7079443B2Semiconductor deviceFUJITSU LTD·Filed 2003·Granted Jul 18, 2006·18 cites·7 claims
- 1079US6262930B1Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower typeFUJITSU LTD·Filed 2000·Granted Jul 17, 2001·24 cites·11 claims
- 1178US6421292B1Semiconductor memory, and memory access methodFUJITSU LTD·Filed 2001·Granted Jul 16, 2002·26 cites·20 claims
- 1276US6377101B1Variable delay circuit and semiconductor integrated circuit deviceFUJITSU LTD·Filed 2000·Granted Apr 23, 2002·19 cites·9 claims
- 1376US6317353B1Semiconductor integrated circuitFUJITSU LTD·Filed 2000·Granted Nov 13, 2001·23 cites·7 claims
- 1476US6236605B1Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifierFUJITSU LTD·Filed 2000·Granted May 22, 2001·23 cites·17 claims
- 1574US6201378B1Semiconductor integrated circuitFUJITSU LTD·Filed 1999·Granted Mar 13, 2001·36 cites·24 claims
- 1673US8351247B2Semiconductor device including memory cell having capacitorFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jan 8, 2013·3 cites·11 claims
- 1770US5978884ASemiconductor memory device having a single line data bus and latch circuits for improved pipeline operationsFUJITSU LTD·Filed 1997·Granted Nov 2, 1999·29 cites·8 claims
- 1868US8350310B2Semiconductor device including memory cell having capacitorFUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Jan 8, 2013·2 cites·2 claims
- 1966US6111802ASemiconductor memory deviceFUJITSU LTD·Filed 1998·Granted Aug 29, 2000·23 cites·17 claims
- 2062US7706209B2Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operationFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 27, 2010·0 cites·27 claims
- 2161US6791354B2Semiconductor integrated circuitFUJITSU LTD·Filed 2002·Granted Sep 14, 2004·11 cites·16 claims
- 2260US6072749AMemory device preventing a slow operation through a mask signalFUJITSU LTD·Filed 1998·Granted Jun 6, 2000·19 cites·10 claims
- 2359US2010220540A1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJISU MICROELECTRONICS LTD·Filed 2010·Application pending·0 cites
- 2458US6278647B1Semiconductor memory device having multi-bank and global data busFUJITSU LTD·Filed 2000·Granted Aug 21, 2001·10 cites·8 claims
- 2554US6188597B1Semiconductor memory having sub-select lines cross-connected to sub-decodersFUJITSU LTD·Filed 2000·Granted Feb 13, 2001·8 cites·14 claims
- 2652US5648680ALead-on-chip semiconductor deviceFUJITSU LTD·Filed 1995·Granted Jul 15, 1997·18 cites·20 claims
- 2751US6147919ASemiconductor memory employing direct-type sense amplifiers capable of realizing high-speed accessFUJITSU LTD·Filed 1999·Granted Nov 14, 2000·13 cites·19 claims
- 2851US6111795AMemory device having row decoderFUJITSU LTD·Filed 1999·Granted Aug 29, 2000·11 cites·9 claims
- 2951US5874853ASemiconductor integrated circuit systemFUJITSU LTD·Filed 1997·Granted Feb 23, 1999·13 cites·16 claims
- 3048US5943253ASemiconductor memory device with efficient layoutFUJITSU LTD·Filed 1998·Granted Aug 24, 1999·11 cites·14 claims
- 3148US2010321983A1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJITSU MICROELECTRONICS LTD·Filed 2010·Application pending·0 cites
- 3247US6151265AMemory device having direct sense circuitFUJITSU LTD·Filed 1999·Granted Nov 21, 2000·10 cites·14 claims
- 3346US7187604B2Semiconductor memoryFUJITSU LTD·Filed 2005·Granted Mar 6, 2007·1 cites·19 claims
- 3446US6052301ASemiconductor memory deviceFUJITSU LTD·Filed 1999·Granted Apr 18, 2000·10 cites·6 claims
- 3545US6115284AMemory device with faster write operationFUJITSU LTD·Filed 1999·Granted Sep 5, 2000·9 cites·7 claims
- 3643US6252269B1Semiconductor memory deviceFUJITSU LTD·Filed 1999·Granted Jun 26, 2001·8 cites·6 claims
- 3740US6868023B2Semiconductor memory device based on dummy-cell methodFUJITSU LTD·Filed 2003·Granted Mar 15, 2005·2 cites·8 claims
- 3839US6404692B1Semiconductor memoryFUJITSU LTD·Filed 2000·Granted Jun 11, 2002·2 cites·13 claims
- 3937US6992944B2Semiconductor memory device with reduced power consumption for refresh operationFUJITSU LTD·Filed 2005·Granted Jan 31, 2006·0 cites·10 claims
- 4034US6538493B2Semiconductor integrated circuitFUJITSU LTD·Filed 2001·Granted Mar 25, 2003·0 cites·9 claims
- 4130US2001046733A1Semiconductor device having electrical divided substrate and method for fabricating the semiconductor deviceFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →